DE3789565D1 - Hochkontrast-Photoresist mit Polyimidpolymeren. - Google Patents

Hochkontrast-Photoresist mit Polyimidpolymeren.

Info

Publication number
DE3789565D1
DE3789565D1 DE3789565T DE3789565T DE3789565D1 DE 3789565 D1 DE3789565 D1 DE 3789565D1 DE 3789565 T DE3789565 T DE 3789565T DE 3789565 T DE3789565 T DE 3789565T DE 3789565 D1 DE3789565 D1 DE 3789565D1
Authority
DE
Germany
Prior art keywords
high contrast
polyimide polymers
contrast photoresist
photoresist
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789565T
Other languages
English (en)
Other versions
DE3789565T2 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clariant Finance BVI Ltd
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of DE3789565D1 publication Critical patent/DE3789565D1/de
Application granted granted Critical
Publication of DE3789565T2 publication Critical patent/DE3789565T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
DE3789565T 1986-02-24 1987-01-29 Hochkontrast-Photoresist mit Polyimidpolymeren. Expired - Fee Related DE3789565T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/832,116 US4837124A (en) 1986-02-24 1986-02-24 High resolution photoresist of imide containing polymers

Publications (2)

Publication Number Publication Date
DE3789565D1 true DE3789565D1 (de) 1994-05-19
DE3789565T2 DE3789565T2 (de) 1994-10-27

Family

ID=25260737

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789565T Expired - Fee Related DE3789565T2 (de) 1986-02-24 1987-01-29 Hochkontrast-Photoresist mit Polyimidpolymeren.

Country Status (5)

Country Link
US (1) US4837124A (de)
EP (1) EP0234327B1 (de)
JP (1) JP2716969B2 (de)
DE (1) DE3789565T2 (de)
HK (1) HK107194A (de)

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JP2768692B2 (ja) * 1988-08-01 1998-06-25 株式会社日立製作所 感放射線組成物及びパターン形成方法
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EP0366590B2 (de) * 1988-10-28 2001-03-21 International Business Machines Corporation Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
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EP0388343B1 (de) * 1989-03-14 1996-07-17 International Business Machines Corporation Chemisch amplifizierter Photolack
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JP2599007B2 (ja) * 1989-11-13 1997-04-09 富士写真フイルム株式会社 ポジ型感光性組成物
US5055439A (en) * 1989-12-27 1991-10-08 International Business Machines Corporation Photoacid generating composition and sensitizer therefor
JPH03223859A (ja) * 1990-01-30 1991-10-02 Matsushita Electric Ind Co Ltd パターン形成方法
JP2621533B2 (ja) * 1990-01-30 1997-06-18 松下電器産業株式会社 パターン形成方法
JP2632066B2 (ja) * 1990-04-06 1997-07-16 富士写真フイルム株式会社 ポジ画像の形成方法
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DE59010396D1 (de) * 1990-04-27 1996-08-01 Siemens Ag Verfahren zur Erzeugung einer Resiststruktur
ES2090218T3 (es) * 1990-12-20 1996-10-16 Siemens Ag Generacion estructural fotolitografica.
EP0492254B1 (de) * 1990-12-20 1999-03-17 Siemens Aktiengesellschaft Verfahren zur Herstellung von N-tert.-Butoxycarbonyl-maleinimid
EP0494383B1 (de) * 1990-12-20 1996-08-14 Siemens Aktiengesellschaft Photoresist
EP0492253B1 (de) * 1990-12-20 1997-04-23 Siemens Aktiengesellschaft Photostrukturierungsverfahren
JP2811124B2 (ja) * 1991-03-15 1998-10-15 三菱電機株式会社 パターン形成方法およびフォトマスクの製造方法
DE4214363C2 (de) * 1991-04-30 1998-01-29 Toshiba Kawasaki Kk Strahlungsempfindliches Gemisch zur Ausbildung von Mustern
KR950000702B1 (ko) * 1991-06-21 1995-01-27 한국과학기술연구원 N-t-부톡시카르보닐말레이미드와 스티렌유도체의 공중합체 제조방법 및 N-t-부톡시카르보닐말레이미드와 스티렌유도체의 공중합체를 이용한 내열성 포지티브 레지스트 화상 형성 방법
DE4124028A1 (de) * 1991-07-19 1993-01-21 Hoechst Ag Verfahren zur herstellung von n-tert.-butoxycarbonyl-maleimid
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
US5206117A (en) * 1991-08-14 1993-04-27 Labadie Jeffrey W Photosensitive polyamic alkyl ester composition and process for its use
US5382637A (en) * 1991-10-31 1995-01-17 International Business Machines Corporation Solid state chain extension polymerization between Lewis acid oligomers and deblocked Lewis bases
DE4414896A1 (de) * 1994-04-28 1995-11-02 Hoechst Ag Positiv arbeitendes strahlungempfindliches Gemisch
DE4444669A1 (de) * 1994-12-15 1996-06-20 Hoechst Ag Strahlungsempfindliches Gemisch
US6017682A (en) * 1995-03-14 2000-01-25 Internatonal Business Machines Corporation Solid state extension method
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
JP3591672B2 (ja) 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
KR100253575B1 (ko) * 1996-06-24 2000-04-15 김영환 포토레지스트
KR100225948B1 (ko) * 1996-06-29 1999-10-15 김영환 감광막 조성물 및 감광막 조성물 제조방법과 감광막 패턴 형성방법
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JP4130030B2 (ja) 1999-03-09 2008-08-06 富士フイルム株式会社 感光性組成物および１，３−ジヒドロ−１−オキソ−２ｈ−インデン誘導体化合物
JP3969909B2 (ja) 1999-09-27 2007-09-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
EP2036721B1 (de) 2000-11-30 2011-02-09 FUJIFILM Corporation Flachdruckplattenvorläufer
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
JP4452572B2 (ja) 2004-07-06 2010-04-21 富士フイルム株式会社 感光性組成物およびそれを用いた画像記録方法
EP1701213A3 (de) 2005-03-08 2006-11-22 Fuji Photo Film Co., Ltd. Lichtempfindliche Zusammensetzung
JP4474317B2 (ja) 2005-03-31 2010-06-02 富士フイルム株式会社 平版印刷版の作製方法
JP5276264B2 (ja) 2006-07-03 2013-08-28 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、平版印刷版の製造方法
EP1955858B1 (de) 2007-02-06 2014-06-18 FUJIFILM Corporation Tintenstrahlaufzeichnungsverfahren und Vorrichtung
US8240808B2 (en) 2007-02-07 2012-08-14 Fujifilm Corporation Ink-jet head maintenance device, ink-jet recording device and ink-jet head maintenance method
JP5227521B2 (ja) 2007-02-26 2013-07-03 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、インクセット
JP5224699B2 (ja) 2007-03-01 2013-07-03 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法、及び平版印刷版
JP5243072B2 (ja) 2007-03-30 2013-07-24 富士フイルム株式会社 インク組成物、並びに、それを用いた画像記録方法及び画像記録物
JP5306681B2 (ja) 2007-03-30 2013-10-02 富士フイルム株式会社 重合性化合物、重合体、インク組成物、印刷物及びインクジェット記録方法
JP5227560B2 (ja) 2007-09-28 2013-07-03 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、成形印刷物の製造方法
JP4898618B2 (ja) 2007-09-28 2012-03-21 富士フイルム株式会社 インクジェット記録方法
JP5265165B2 (ja) 2007-09-28 2013-08-14 富士フイルム株式会社 塗布装置及びこれを用いるインクジェット記録装置
JP5254632B2 (ja) 2008-02-07 2013-08-07 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、成形印刷物
US20090214797A1 (en) 2008-02-25 2009-08-27 Fujifilm Corporation Inkjet ink composition, and inkjet recording method and printed material employing same
JP5583329B2 (ja) 2008-03-11 2014-09-03 富士フイルム株式会社 顔料組成物、インク組成物、印刷物、インクジェット記録方法、及びポリアリルアミン誘導体
JP4914862B2 (ja) 2008-03-26 2012-04-11 富士フイルム株式会社 インクジェット記録方法、及び、インクジェット記録装置
JP5414367B2 (ja) 2008-06-02 2014-02-12 富士フイルム株式会社 顔料分散物及びそれを用いたインク組成物
JP5383133B2 (ja) 2008-09-19 2014-01-08 富士フイルム株式会社 インク組成物、インクジェット記録方法及び印刷物成形体の製造方法
JP2010077228A (ja) 2008-09-25 2010-04-08 Fujifilm Corp インク組成物、インクジェット記録方法、及び、印刷物
JP2010128464A (ja) * 2008-12-01 2010-06-10 Az Electronic Materials Kk レジストパターン形成方法
JP2010180330A (ja) 2009-02-05 2010-08-19 Fujifilm Corp 非水系インク、インクセット、画像記録方法、画像記録装置、および記録物
JP5350827B2 (ja) 2009-02-09 2013-11-27 富士フイルム株式会社 インク組成物、及び、インクジェット記録方法
JP5349095B2 (ja) 2009-03-17 2013-11-20 富士フイルム株式会社 インク組成物、及び、インクジェット記録方法
JP5349097B2 (ja) 2009-03-19 2013-11-20 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、及び、成形印刷物の製造方法
JP5383289B2 (ja) 2009-03-31 2014-01-08 富士フイルム株式会社 インク組成物、インクジェット用であるインク組成物、インクジェット記録方法、およびインクジェット法による印刷物
JP5572026B2 (ja) 2009-09-18 2014-08-13 富士フイルム株式会社 インク組成物、及び、インクジェット記録方法
JP5530141B2 (ja) 2009-09-29 2014-06-25 富士フイルム株式会社 インク組成物及びインクジェット記録方法
US8323868B2 (en) * 2009-11-06 2012-12-04 International Business Machines Corporation Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof
EP2644664B1 (de) 2012-03-29 2015-07-29 Fujifilm Corporation Durch aktinische Strahlung härtbare Tintenzusammensetzung, Tintenstrahlaufzeichnungsverfahren, Dekorfolie, Dekorfolienformprodukt, Verfahren zur Herstellung eines In-Mold-Formartikels sowie In-Mold-Formartikel
JP5980702B2 (ja) 2013-03-07 2016-08-31 富士フイルム株式会社 インクジェットインク組成物、インクジェット記録方法、及び、成型印刷物の製造方法
JP5939644B2 (ja) 2013-08-30 2016-06-22 富士フイルム株式会社 画像形成方法、インモールド成型品の製造方法、及び、インクセット

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Also Published As

Publication number Publication date
EP0234327A3 (en) 1989-10-25
EP0234327A2 (de) 1987-09-02
EP0234327B1 (de) 1994-04-13
JP2716969B2 (ja) 1998-02-18
HK107194A (en) 1994-10-14
JPS62229242A (ja) 1987-10-08
US4837124A (en) 1989-06-06
DE3789565T2 (de) 1994-10-27

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Owner name: CLARIANT FINANCE (BVI) LTD., ROAD TOWN, TORTOLA, V

8328 Change in the person/name/address of the agent

Free format text: SPOTT WEINMILLER & PARTNER, 80336 MUENCHEN

8339 Ceased/non-payment of the annual fee