DE3789416D1 - Dynamische RAM-Zelle mit einem gemeinsamen Grabenspeicherkondensator, welcher durch die Seitenwände definierte Brückenkontakte und Torelektroden aufweist. - Google Patents
Dynamische RAM-Zelle mit einem gemeinsamen Grabenspeicherkondensator, welcher durch die Seitenwände definierte Brückenkontakte und Torelektroden aufweist.Info
- Publication number
- DE3789416D1 DE3789416D1 DE87115186T DE3789416T DE3789416D1 DE 3789416 D1 DE3789416 D1 DE 3789416D1 DE 87115186 T DE87115186 T DE 87115186T DE 3789416 T DE3789416 T DE 3789416T DE 3789416 D1 DE3789416 D1 DE 3789416D1
- Authority
- DE
- Germany
- Prior art keywords
- side walls
- storage capacitor
- gate electrodes
- dynamic ram
- ram cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/919,940 US4785337A (en) | 1986-10-17 | 1986-10-17 | Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3789416D1 true DE3789416D1 (de) | 1994-04-28 |
DE3789416T2 DE3789416T2 (de) | 1994-10-27 |
Family
ID=25442904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3789416T Expired - Fee Related DE3789416T2 (de) | 1986-10-17 | 1987-10-16 | Dynamische RAM-Zelle mit einem gemeinsamen Grabenspeicherkondensator, welcher durch die Seitenwände definierte Brückenkontakte und Torelektroden aufweist. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4785337A (de) |
EP (1) | EP0264858B1 (de) |
JP (1) | JPS63120462A (de) |
CA (1) | CA1289243C (de) |
DE (1) | DE3789416T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0821685B2 (ja) * | 1988-02-26 | 1996-03-04 | 株式会社東芝 | 半導体メモリの製造方法 |
JPH0262073A (ja) * | 1988-08-26 | 1990-03-01 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2633650B2 (ja) * | 1988-09-30 | 1997-07-23 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US5120677A (en) * | 1989-03-23 | 1992-06-09 | Oki Electric Industry Co., Ltd. | Method for making a semiconductor device by doping with arsenic, of at least 25 wt. % into a polysilicon layer |
US5001525A (en) * | 1989-03-27 | 1991-03-19 | International Business Machines Corporation | Two square memory cells having highly conductive word lines |
JPH0770617B2 (ja) * | 1989-05-15 | 1995-07-31 | 株式会社東芝 | 半導体記憶装置 |
US4978634A (en) * | 1989-07-25 | 1990-12-18 | Texas Instruments, Incorporated | Method of making trench DRAM cell with stacked capacitor and buried lateral contact |
KR920004028B1 (ko) * | 1989-11-20 | 1992-05-22 | 삼성전자 주식회사 | 반도체 장치 및 그 제조방법 |
EP0436073A3 (en) * | 1990-01-05 | 1993-05-26 | International Business Machines Corporation | Trench-capacitor-one-transistor storage cell and array for dynamic random access memories |
JPH03276752A (ja) * | 1990-03-27 | 1991-12-06 | Matsushita Electron Corp | 半導体容量装置 |
US5204281A (en) * | 1990-09-04 | 1993-04-20 | Motorola, Inc. | Method of making dynamic random access memory cell having a trench capacitor |
US5185294A (en) * | 1991-11-22 | 1993-02-09 | International Business Machines Corporation | Boron out-diffused surface strap process |
US5162248A (en) * | 1992-03-13 | 1992-11-10 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
USRE39665E1 (en) | 1992-03-13 | 2007-05-29 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
US5283453A (en) * | 1992-10-02 | 1994-02-01 | International Business Machines Corporation | Trench sidewall structure |
KR950012731A (ko) * | 1993-10-25 | 1995-05-16 | 사토 후미오 | 반도체기억장치 및 그 제조방법 |
US5529197A (en) * | 1994-12-20 | 1996-06-25 | Siemens Aktiengesellschaft | Polysilicon/polycide etch process for sub-micron gate stacks |
US5521118A (en) * | 1994-12-22 | 1996-05-28 | International Business Machines Corporation | Sidewall strap |
US6653733B1 (en) * | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
US6197644B1 (en) * | 1998-11-06 | 2001-03-06 | Advanced Micro Devices, Inc. | High density mosfet fabrication method with integrated device scaling |
US6531071B1 (en) * | 2000-01-04 | 2003-03-11 | Micron Technology, Inc. | Passivation for cleaning a material |
US6573550B2 (en) * | 2000-01-28 | 2003-06-03 | General Electronics Applications, Inc. | Semiconductor with high-voltage components and low-voltage components on a shared die |
JP2002076308A (ja) * | 2000-08-31 | 2002-03-15 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US6498062B2 (en) | 2001-04-27 | 2002-12-24 | Micron Technology, Inc. | DRAM access transistor |
US7231624B2 (en) * | 2002-11-19 | 2007-06-12 | Cadence Design Systems, Inc. | Method, system, and article of manufacture for implementing metal-fill with power or ground connection |
US7287324B2 (en) * | 2002-11-19 | 2007-10-30 | Cadence Design Systems, Inc. | Method, system, and article of manufacture for implementing metal-fill on an integrated circuit |
US7328419B2 (en) * | 2002-11-19 | 2008-02-05 | Cadence Design Systems, Inc. | Place and route tool that incorporates a metal-fill mechanism |
US6734524B1 (en) * | 2002-12-31 | 2004-05-11 | Motorola, Inc. | Electronic component and method of manufacturing same |
JP2004228342A (ja) * | 2003-01-23 | 2004-08-12 | Denso Corp | 半導体装置およびその製造方法 |
KR20040096377A (ko) * | 2003-05-09 | 2004-11-16 | 삼성전자주식회사 | 산화막 및 산질화막 형성 방법 |
US8334451B2 (en) * | 2003-10-03 | 2012-12-18 | Ixys Corporation | Discrete and integrated photo voltaic solar cells |
TWI231960B (en) * | 2004-05-31 | 2005-05-01 | Mosel Vitelic Inc | Method of forming films in the trench |
US7518179B2 (en) | 2004-10-08 | 2009-04-14 | Freescale Semiconductor, Inc. | Virtual ground memory array and method therefor |
JP4667821B2 (ja) * | 2004-10-13 | 2011-04-13 | シャープ株式会社 | 半導体装置 |
US7112490B1 (en) * | 2005-07-25 | 2006-09-26 | Freescale Semiconductor, Inc. | Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench |
US7619270B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Electronic device including discontinuous storage elements |
US7285819B2 (en) * | 2005-07-25 | 2007-10-23 | Freescale Semiconductor, Inc. | Nonvolatile storage array with continuous control gate employing hot carrier injection programming |
US7262997B2 (en) * | 2005-07-25 | 2007-08-28 | Freescale Semiconductor, Inc. | Process for operating an electronic device including a memory array and conductive lines |
US7619275B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Process for forming an electronic device including discontinuous storage elements |
US7582929B2 (en) * | 2005-07-25 | 2009-09-01 | Freescale Semiconductor, Inc | Electronic device including discontinuous storage elements |
US7642594B2 (en) * | 2005-07-25 | 2010-01-05 | Freescale Semiconductor, Inc | Electronic device including gate lines, bit lines, or a combination thereof |
US7394686B2 (en) * | 2005-07-25 | 2008-07-01 | Freescale Semiconductor, Inc. | Programmable structure including discontinuous storage elements and spacer control gates in a trench |
US20070020840A1 (en) * | 2005-07-25 | 2007-01-25 | Freescale Semiconductor, Inc. | Programmable structure including nanocrystal storage elements in a trench |
US7314798B2 (en) * | 2005-07-25 | 2008-01-01 | Freescale Semiconductor, Inc. | Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming |
US7694258B1 (en) * | 2005-08-01 | 2010-04-06 | Cadence Design Systems, Inc. | Method and apparatus for inserting metal fill in an integrated circuit (“IC”) layout |
US7592224B2 (en) | 2006-03-30 | 2009-09-22 | Freescale Semiconductor, Inc | Method of fabricating a storage device including decontinuous storage elements within and between trenches |
US7838922B2 (en) * | 2007-01-24 | 2010-11-23 | Freescale Semiconductor, Inc. | Electronic device including trenches and discontinuous storage elements |
US7651916B2 (en) | 2007-01-24 | 2010-01-26 | Freescale Semiconductor, Inc | Electronic device including trenches and discontinuous storage elements and processes of forming and using the same |
US7572699B2 (en) * | 2007-01-24 | 2009-08-11 | Freescale Semiconductor, Inc | Process of forming an electronic device including fins and discontinuous storage elements |
DE102007009383A1 (de) * | 2007-02-20 | 2008-08-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiteranordnung und Verfahren zu deren Herstellung |
KR101218904B1 (ko) * | 2010-11-29 | 2013-01-21 | 심재훈 | 메모리 소자 및 이의 제조 방법 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US32090A (en) * | 1861-04-16 | Clothes-wbiitgee | ||
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
EP0009910B1 (de) * | 1978-09-20 | 1985-02-13 | Fujitsu Limited | Halbleiter-Speichervorrichtung und Verfahren zum Herstellen dieser Vorrichtung |
US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
US4369564A (en) * | 1979-10-29 | 1983-01-25 | American Microsystems, Inc. | VMOS Memory cell and method for making same |
US4378627A (en) * | 1980-07-08 | 1983-04-05 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes |
US4322883A (en) * | 1980-07-08 | 1982-04-06 | International Business Machines Corporation | Self-aligned metal process for integrated injection logic integrated circuits |
US4419809A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Fabrication process of sub-micrometer channel length MOSFETs |
NL8105920A (nl) * | 1981-12-31 | 1983-07-18 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
JPS59141262A (ja) * | 1983-02-02 | 1984-08-13 | Nec Corp | 半導体メモリセル |
JPS6068647A (ja) * | 1983-09-26 | 1985-04-19 | Fujitsu Ltd | 半導体記憶装置 |
JPH0665225B2 (ja) * | 1984-01-13 | 1994-08-22 | 株式会社東芝 | 半導体記憶装置の製造方法 |
DE3565339D1 (en) * | 1984-04-19 | 1988-11-03 | Nippon Telegraph & Telephone | Semiconductor memory device and method of manufacturing the same |
US4688063A (en) * | 1984-06-29 | 1987-08-18 | International Business Machines Corporation | Dynamic ram cell with MOS trench capacitor in CMOS |
JPS6187359A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体メモリセル |
JPS6187358A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体記憶装置およびその製造方法 |
JPS6188555A (ja) * | 1984-10-08 | 1986-05-06 | Nec Corp | 半導体メモリセル |
JPH0682800B2 (ja) * | 1985-04-16 | 1994-10-19 | 株式会社東芝 | 半導体記憶装置 |
-
1986
- 1986-10-17 US US06/919,940 patent/US4785337A/en not_active Expired - Fee Related
-
1987
- 1987-08-06 JP JP62195438A patent/JPS63120462A/ja active Granted
- 1987-10-16 EP EP87115186A patent/EP0264858B1/de not_active Expired - Lifetime
- 1987-10-16 DE DE3789416T patent/DE3789416T2/de not_active Expired - Fee Related
- 1987-10-19 CA CA000549648A patent/CA1289243C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0264858B1 (de) | 1994-03-23 |
EP0264858A2 (de) | 1988-04-27 |
DE3789416T2 (de) | 1994-10-27 |
CA1289243C (en) | 1991-09-17 |
JPH0586072B2 (de) | 1993-12-09 |
JPS63120462A (ja) | 1988-05-24 |
US4785337A (en) | 1988-11-15 |
EP0264858A3 (en) | 1989-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |