DE3788978T2 - Halbleiterbildsensor und Herstellungsverfahren dafür. - Google Patents

Halbleiterbildsensor und Herstellungsverfahren dafür.

Info

Publication number
DE3788978T2
DE3788978T2 DE3788978T DE3788978T DE3788978T2 DE 3788978 T2 DE3788978 T2 DE 3788978T2 DE 3788978 T DE3788978 T DE 3788978T DE 3788978 T DE3788978 T DE 3788978T DE 3788978 T2 DE3788978 T2 DE 3788978T2
Authority
DE
Germany
Prior art keywords
manufacturing
image sensor
method therefor
semiconductor image
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3788978T
Other languages
English (en)
Other versions
DE3788978D1 (de
Inventor
Akira - Takei
Tetsuo Dai- -Nakahar Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3788978D1 publication Critical patent/DE3788978D1/de
Application granted granted Critical
Publication of DE3788978T2 publication Critical patent/DE3788978T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
DE3788978T 1986-05-26 1987-05-26 Halbleiterbildsensor und Herstellungsverfahren dafür. Expired - Fee Related DE3788978T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61119347A JPS63153A (ja) 1986-05-26 1986-05-26 電荷転送装置

Publications (2)

Publication Number Publication Date
DE3788978D1 DE3788978D1 (de) 1994-03-17
DE3788978T2 true DE3788978T2 (de) 1994-05-19

Family

ID=14759238

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3788978T Expired - Fee Related DE3788978T2 (de) 1986-05-26 1987-05-26 Halbleiterbildsensor und Herstellungsverfahren dafür.

Country Status (5)

Country Link
US (1) US4910568A (de)
EP (1) EP0247942B1 (de)
JP (1) JPS63153A (de)
KR (1) KR900008650B1 (de)
DE (1) DE3788978T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8901156A (nl) * 1989-05-08 1990-12-03 Imec Inter Uni Micro Electr Stralingsgevoelig orgaan of sensor in retina-achtige configuratie.
JPH03181282A (ja) * 1989-12-11 1991-08-07 Fuji Photo Film Co Ltd 固体撮像デバイス
US5243215A (en) * 1990-05-31 1993-09-07 Fuji Electric Co., Ltd. Semiconductor photodiode device with reduced junction area
JP2903812B2 (ja) * 1991-12-10 1999-06-14 日本電気株式会社 固体撮像装置
JP2970307B2 (ja) * 1993-05-17 1999-11-02 日本電気株式会社 固体撮像装置の製造方法
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
EP2109143B1 (de) * 2008-04-09 2013-05-29 Sony Corporation Festkörperabbildungsvorrichtung, Herstellungsverfahren dafür und elektronische Vorrichtung
US8605187B2 (en) * 2009-06-01 2013-12-10 Truesense Imaging, Inc. CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8476681B2 (en) * 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2583312A2 (de) 2010-06-18 2013-04-24 Sionyx, Inc. Lichtempfindliche hochgeschwindigkeitsvorrichtungen und verfahren dafür
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
US9739046B2 (en) 2014-03-12 2017-08-22 Joseph S. Miskovich Modular stormwater retention and management system
US10597861B2 (en) 2014-03-12 2020-03-24 J.M. Sales Associates, Inc. Modular stormwater retention system
USD840498S1 (en) 2017-08-09 2019-02-12 J.M. Sales Associates, Inc. Modular fluid retention and management tray

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588374A (en) * 1978-12-27 1980-07-04 Fujitsu Ltd Charge transferring device
US4484210A (en) * 1980-09-05 1984-11-20 Nippon Electric Co., Ltd. Solid-state imaging device having a reduced image lag
US4378565A (en) * 1980-10-01 1983-03-29 General Electric Company Integrated circuit and method of making same
JPS598350A (ja) * 1982-07-06 1984-01-17 Nec Corp 半導体集積回路装置
JPS6057780A (ja) * 1983-09-07 1985-04-03 Toshiba Corp 固体撮像装置およびその製造方法
US4658278A (en) * 1985-04-15 1987-04-14 Rca Corporation High density charge-coupled device imager and method of making the same
US4675982A (en) * 1985-10-31 1987-06-30 International Business Machines Corporation Method of making self-aligned recessed oxide isolation regions

Also Published As

Publication number Publication date
KR900008650B1 (ko) 1990-11-26
DE3788978D1 (de) 1994-03-17
EP0247942B1 (de) 1994-02-02
KR870011699A (ko) 1987-12-26
EP0247942A2 (de) 1987-12-02
US4910568A (en) 1990-03-20
JPS63153A (ja) 1988-01-05
EP0247942A3 (en) 1990-09-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee