DE3788471T2 - Verfahren zur Herstellung einer vertikaldifferenzierten Transistoranordnung. - Google Patents

Verfahren zur Herstellung einer vertikaldifferenzierten Transistoranordnung.

Info

Publication number
DE3788471T2
DE3788471T2 DE3788471T DE3788471T DE3788471T2 DE 3788471 T2 DE3788471 T2 DE 3788471T2 DE 3788471 T DE3788471 T DE 3788471T DE 3788471 T DE3788471 T DE 3788471T DE 3788471 T2 DE3788471 T2 DE 3788471T2
Authority
DE
Germany
Prior art keywords
photoresist
semiconductor structure
etching
semiconductor
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3788471T
Other languages
German (de)
English (en)
Other versions
DE3788471D1 (de
Inventor
Christina Marie Knoedler
Douglas Charles Latulipe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3788471D1 publication Critical patent/DE3788471D1/de
Publication of DE3788471T2 publication Critical patent/DE3788471T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
DE3788471T 1986-08-19 1987-07-10 Verfahren zur Herstellung einer vertikaldifferenzierten Transistoranordnung. Expired - Fee Related DE3788471T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/897,891 US4759821A (en) 1986-08-19 1986-08-19 Process for preparing a vertically differentiated transistor device

Publications (2)

Publication Number Publication Date
DE3788471D1 DE3788471D1 (de) 1994-01-27
DE3788471T2 true DE3788471T2 (de) 1994-06-23

Family

ID=25408603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3788471T Expired - Fee Related DE3788471T2 (de) 1986-08-19 1987-07-10 Verfahren zur Herstellung einer vertikaldifferenzierten Transistoranordnung.

Country Status (4)

Country Link
US (1) US4759821A (enExample)
EP (1) EP0256298B1 (enExample)
JP (1) JPS6352483A (enExample)
DE (1) DE3788471T2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6846740B2 (en) * 2003-06-14 2005-01-25 Intel Corporation Wafer-level quasi-planarization and passivation for multi-height structures
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7504685B2 (en) 2005-06-28 2009-03-17 Micron Technology, Inc. Oxide epitaxial isolation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL157662B (nl) * 1969-05-22 1978-08-15 Philips Nv Werkwijze voor het etsen van een oppervlak onder toepassing van een etsmasker, alsmede voorwerpen, verkregen door toepassing van deze werkwijze.
JPS5773180A (en) * 1980-10-24 1982-05-07 Hitachi Ltd Etching method
US4454014A (en) * 1980-12-03 1984-06-12 Memorex Corporation Etched article
US4482442A (en) * 1981-07-09 1984-11-13 At&T Bell Laboratories Photoelectrochemical etching of n-type gallium arsenide
JPS58132933A (ja) * 1982-02-03 1983-08-08 Nec Corp 選択ドライエツチング方法
US4572765A (en) * 1983-05-02 1986-02-25 Fairchild Camera & Instrument Corporation Method of fabricating integrated circuit structures using replica patterning
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
JPS60261178A (ja) * 1984-06-08 1985-12-24 Oki Electric Ind Co Ltd 半導体素子の製造方法
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures

Also Published As

Publication number Publication date
EP0256298A3 (en) 1989-12-06
US4759821A (en) 1988-07-26
EP0256298B1 (en) 1993-12-15
JPH0464459B2 (enExample) 1992-10-15
EP0256298A2 (en) 1988-02-24
JPS6352483A (ja) 1988-03-05
DE3788471D1 (de) 1994-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee