DE3777589D1 - Verfahren zur produktion von halbleiteranordnungen. - Google Patents

Verfahren zur produktion von halbleiteranordnungen.

Info

Publication number
DE3777589D1
DE3777589D1 DE8787310963T DE3777589T DE3777589D1 DE 3777589 D1 DE3777589 D1 DE 3777589D1 DE 8787310963 T DE8787310963 T DE 8787310963T DE 3777589 T DE3777589 T DE 3777589T DE 3777589 D1 DE3777589 D1 DE 3777589D1
Authority
DE
Germany
Prior art keywords
producing semiconductor
semiconductor arrangements
arrangements
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787310963T
Other languages
English (en)
Inventor
Masanori Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3777589D1 publication Critical patent/DE3777589D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65B—MACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
    • B65B55/00—Preserving, protecting or purifying packages or package contents in association with packaging
    • B65B55/22—Immersing contents in protective liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE8787310963T 1986-12-17 1987-12-14 Verfahren zur produktion von halbleiteranordnungen. Expired - Fee Related DE3777589D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61302118A JPH084063B2 (ja) 1986-12-17 1986-12-17 半導体基板の保存方法

Publications (1)

Publication Number Publication Date
DE3777589D1 true DE3777589D1 (de) 1992-04-23

Family

ID=17905147

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787310963T Expired - Fee Related DE3777589D1 (de) 1986-12-17 1987-12-14 Verfahren zur produktion von halbleiteranordnungen.

Country Status (4)

Country Link
US (1) US4883775A (de)
EP (1) EP0273628B1 (de)
JP (1) JPH084063B2 (de)
DE (1) DE3777589D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3823765A1 (de) * 1988-07-13 1990-01-18 Wacker Chemitronic Verfahren zur konservierung der oberflaeche von siliciumscheiben
US5310696A (en) * 1989-06-16 1994-05-10 Massachusetts Institute Of Technology Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth
WO1996020048A1 (en) * 1994-12-27 1996-07-04 Philips Electronics N.V. Method of bulk washing and drying of discrete components
US5695661A (en) * 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
JP3250090B2 (ja) * 1995-06-27 2002-01-28 東京エレクトロン株式会社 洗浄処理装置及び洗浄処理方法
JP3343013B2 (ja) * 1995-12-28 2002-11-11 大日本スクリーン製造株式会社 基板洗浄方法及びその装置
EP0797243A3 (de) * 1996-03-07 1999-06-16 Texas Instruments Incorporated Ätzverfahren für dielektrische Schichten in Halbleiterschaltungen
KR100196998B1 (ko) * 1996-03-13 1999-06-15 구본준 반도체 웨이퍼 습식 처리 장치
WO1997044817A1 (en) * 1996-05-24 1997-11-27 Seh America, Inc. Hot ultra-pure water dewaxing process
DE19716374A1 (de) * 1997-04-18 1998-10-22 Wacker Chemie Gmbh Brechen von Reinstsilicium auf Eis
KR100647047B1 (ko) * 1998-03-25 2006-11-23 다이낑 고오교 가부시키가이샤 반도체 제조장치용 불소고무계 성형품의 세정방법 및세정된 성형품
JP2000012648A (ja) * 1998-06-17 2000-01-14 Ebara Corp 素子製造工程における基材表面保護方法及び装置
AU4167399A (en) 1998-06-18 2000-01-05 Citizen Watch Co. Ltd. Wrist watch band adjust pin, method of manufacturing the pin, and wrist watch band connection structure
DE19847098A1 (de) * 1998-10-13 2000-04-20 Wacker Chemie Gmbh Verfahren und Vorrichtung zur Bearbeitung von Halbleitermaterial
US6369357B1 (en) * 2000-02-07 2002-04-09 Weld Aid Products Inc. Implementation system for continuous welding, method, and products for the implementation of the system and/or method
KR100853000B1 (ko) * 2001-03-16 2008-08-19 신에쯔 한도타이 가부시키가이샤 실리콘 웨이퍼 보관용수 및 보관방법
JP2006332396A (ja) * 2005-05-27 2006-12-07 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4514700B2 (ja) * 2005-12-13 2010-07-28 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
TW200734462A (en) * 2006-03-08 2007-09-16 In Motion Invest Ltd Regulating stem cells
JP4567622B2 (ja) * 2006-03-15 2010-10-20 富士通セミコンダクター株式会社 半導体ウェハの保管方法
US20070221254A1 (en) * 2006-03-24 2007-09-27 Akira Izumi Substrate processing apparatus and substrate processing method
US20080318314A1 (en) * 2007-06-20 2008-12-25 Valentin Fulga Production from blood of cells of neural lineage
US20090077825A1 (en) * 2007-07-17 2009-03-26 Semiconductor Analytical Services, Inc. (Sas Inc.) Apparatus and method for cleaning and drying solid objects
JP7224981B2 (ja) * 2019-03-15 2023-02-20 キオクシア株式会社 基板処理方法および基板処理装置
CN117943365A (zh) * 2024-03-21 2024-04-30 通威微电子有限公司 刷片包装一体机

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1126513B (de) * 1958-08-19 1962-03-29 Intermetall Verfahren zur Bearbeitung von Halbleiteranordnungen
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3464104A (en) * 1967-08-21 1969-09-02 Sylvania Electric Prod Method of producing semiconductor devices
US3577286A (en) * 1967-10-11 1971-05-04 Ibm Semiconductor preparation and deposition process
JPS5618427A (en) * 1979-07-23 1981-02-21 Fujitsu Ltd Washing method for semiconductor substrate with pure water
JPS5917264A (ja) * 1982-07-21 1984-01-28 Hitachi Ltd ウエハ切断方法
JPS59106121A (ja) * 1982-12-10 1984-06-19 Fujitsu Ltd 半導体基板の表面処理方法
JPS6083333A (ja) * 1983-10-13 1985-05-11 Fujitsu Ltd 無塵乾燥方法

Also Published As

Publication number Publication date
EP0273628A1 (de) 1988-07-06
EP0273628B1 (de) 1992-03-18
JPS63153813A (ja) 1988-06-27
US4883775A (en) 1989-11-28
JPH084063B2 (ja) 1996-01-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee