JPS5618427A - Washing method for semiconductor substrate with pure water - Google Patents

Washing method for semiconductor substrate with pure water

Info

Publication number
JPS5618427A
JPS5618427A JP9354179A JP9354179A JPS5618427A JP S5618427 A JPS5618427 A JP S5618427A JP 9354179 A JP9354179 A JP 9354179A JP 9354179 A JP9354179 A JP 9354179A JP S5618427 A JPS5618427 A JP S5618427A
Authority
JP
Japan
Prior art keywords
pure water
adsorbing
silicon
metals
deterioration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9354179A
Other languages
Japanese (ja)
Inventor
Kunihiko Wada
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9354179A priority Critical patent/JPS5618427A/en
Publication of JPS5618427A publication Critical patent/JPS5618427A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent the deterioration of the characteristics due to the intrusion of impure materials, by passing pure water through an adsorbing agent whose main ingredient is highly pure silicon; removing heavy metals, metal salts, and the like; and washing semiconductor substrates by using said pure water. CONSTITUTION:The adsorbing agent whose main ingredient is small pieces of highly pure silicon 4 (or small pieces of silicon on the surfaces on which SiO2 is formed) is filled in an adsorbing cylinder 3. Pure water, which comes from an active-carbon adsorbing device, a reverse osmosis water-purifying device, and ion exchanging device, and the like, is supplied through a pure water supplying pipe 1 to the adsorbing cylinder 3; where heavy metals, alkali metals, and the like are removed. Then, said pure water goes through a submicron filter 5 and washes semiconductor substrates 8. In this contitution Na metals and the like are not intruded, and the deterioration of the characteristics such as the threshold voltage Vth of an MSO device, a flat band voltage VFB, and the like can be prevented.
JP9354179A 1979-07-23 1979-07-23 Washing method for semiconductor substrate with pure water Pending JPS5618427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9354179A JPS5618427A (en) 1979-07-23 1979-07-23 Washing method for semiconductor substrate with pure water

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9354179A JPS5618427A (en) 1979-07-23 1979-07-23 Washing method for semiconductor substrate with pure water

Publications (1)

Publication Number Publication Date
JPS5618427A true JPS5618427A (en) 1981-02-21

Family

ID=14085124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9354179A Pending JPS5618427A (en) 1979-07-23 1979-07-23 Washing method for semiconductor substrate with pure water

Country Status (1)

Country Link
JP (1) JPS5618427A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207622A (en) * 1982-05-28 1983-12-03 Stanley Electric Co Ltd Treating method for thin film manufacturing substrate
JPS6015913A (en) * 1983-07-08 1985-01-26 Tokuyama Soda Co Ltd Process of semiconductor substrate
JPS6287299A (en) * 1985-10-14 1987-04-21 Kurita Water Ind Ltd Apparatus for producing ultrapure water
JPS63265787A (en) * 1987-04-22 1988-11-02 Honda Motor Co Ltd Device for removing automobile door
US4883775A (en) * 1986-12-17 1989-11-28 Fujitsu Limited Process for cleaning and protecting semiconductor substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5274279A (en) * 1975-12-17 1977-06-22 Toshiba Corp Washing of semiconductor wafers
JPS53108660A (en) * 1977-01-31 1978-09-21 Gen Electric Method of removing dissolved organic polluted article in waste water flow
JPS5472795A (en) * 1977-11-18 1979-06-11 Union Carbide Corp Crystalline silica

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5274279A (en) * 1975-12-17 1977-06-22 Toshiba Corp Washing of semiconductor wafers
JPS53108660A (en) * 1977-01-31 1978-09-21 Gen Electric Method of removing dissolved organic polluted article in waste water flow
JPS5472795A (en) * 1977-11-18 1979-06-11 Union Carbide Corp Crystalline silica

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207622A (en) * 1982-05-28 1983-12-03 Stanley Electric Co Ltd Treating method for thin film manufacturing substrate
JPS6015913A (en) * 1983-07-08 1985-01-26 Tokuyama Soda Co Ltd Process of semiconductor substrate
JPS6287299A (en) * 1985-10-14 1987-04-21 Kurita Water Ind Ltd Apparatus for producing ultrapure water
US4883775A (en) * 1986-12-17 1989-11-28 Fujitsu Limited Process for cleaning and protecting semiconductor substrates
JPS63265787A (en) * 1987-04-22 1988-11-02 Honda Motor Co Ltd Device for removing automobile door
JPH0583435B2 (en) * 1987-04-22 1993-11-26 Honda Motor Co Ltd

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