DE3775953D1 - Lithographisches system fuer roentgenstrahlen. - Google Patents

Lithographisches system fuer roentgenstrahlen.

Info

Publication number
DE3775953D1
DE3775953D1 DE8787400606T DE3775953T DE3775953D1 DE 3775953 D1 DE3775953 D1 DE 3775953D1 DE 8787400606 T DE8787400606 T DE 8787400606T DE 3775953 T DE3775953 T DE 3775953T DE 3775953 D1 DE3775953 D1 DE 3775953D1
Authority
DE
Germany
Prior art keywords
lithographic system
ray rays
rays
ray
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787400606T
Other languages
English (en)
Inventor
Toshihiko Osada
Ichiro Honjo
Kenji Sugishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3775953D1 publication Critical patent/DE3775953D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G1/00X-ray apparatus involving X-ray tubes; Circuits therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70075Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE8787400606T 1986-03-18 1987-03-18 Lithographisches system fuer roentgenstrahlen. Expired - Fee Related DE3775953D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61058055A JPS62222634A (ja) 1986-03-18 1986-03-18 X線露光方法

Publications (1)

Publication Number Publication Date
DE3775953D1 true DE3775953D1 (de) 1992-02-27

Family

ID=13073225

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787400606T Expired - Fee Related DE3775953D1 (de) 1986-03-18 1987-03-18 Lithographisches system fuer roentgenstrahlen.

Country Status (5)

Country Link
US (1) US4748646A (de)
EP (1) EP0238416B1 (de)
JP (1) JPS62222634A (de)
KR (1) KR890001264B1 (de)
DE (1) DE3775953D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0253283A3 (de) * 1986-07-15 1988-07-20 Siemens Aktiengesellschaft Anordnung zur Belichtung von Halbleiterscheiben mittels Synchrotronstrahlung in einem Lithographiegerät
JPS63116424A (ja) * 1986-11-05 1988-05-20 Nec Corp X線露光装置
JP2627543B2 (ja) * 1988-09-05 1997-07-09 キヤノン株式会社 Sor露光システム
US5267292A (en) * 1988-10-05 1993-11-30 Canon Kabushiki Kaisha X-ray exposure apparatus
JP2728898B2 (ja) * 1988-10-05 1998-03-18 キヤノン株式会社 露光装置
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Sor−x線露光装置
US5001737A (en) * 1988-10-24 1991-03-19 Aaron Lewis Focusing and guiding X-rays with tapered capillaries
JPH0695159B2 (ja) * 1988-12-08 1994-11-24 富士通株式会社 放射線装置
US5285488A (en) * 1989-09-21 1994-02-08 Canon Kabushiki Kaisha Exposure apparatus
US5138643A (en) * 1989-10-02 1992-08-11 Canon Kabushiki Kaisha Exposure apparatus
JP2742122B2 (ja) * 1989-12-28 1998-04-22 キヤノン株式会社 照明系及びx線露光装置
US5182763A (en) * 1989-12-28 1993-01-26 Canon Kabushiki Kaisha Reflection device
DE4117639A1 (de) * 1990-05-31 1991-12-05 Toshiba Kawasaki Kk Synchrotronstrahlungsgeraet
US5031199A (en) * 1990-06-05 1991-07-09 Wisconsin Alumni Research Foundation X-ray lithography beamline method and apparatus
JPH0748080B2 (ja) * 1990-06-11 1995-05-24 株式会社ソルテック 放射光透過窓
JP2959579B2 (ja) * 1990-06-19 1999-10-06 キヤノン株式会社 X線露光装置
JP2951477B2 (ja) * 1992-05-13 1999-09-20 浜松ホトニクス株式会社 物体の電位を変化させる方法、および所定帯電物体の除電方法
US5371774A (en) * 1993-06-24 1994-12-06 Wisconsin Alumni Research Foundation X-ray lithography beamline imaging system
JP3287725B2 (ja) * 1994-06-07 2002-06-04 キヤノン株式会社 露光方法とこれを用いたデバイス製造方法
DE102008000967B4 (de) * 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969927A (ja) * 1982-10-15 1984-04-20 Hitachi Ltd X線露光装置
JPS59101833A (ja) * 1982-12-03 1984-06-12 Hitachi Ltd X線露光装置
JPS60208828A (ja) * 1984-04-02 1985-10-21 Canon Inc X線露光装置

Also Published As

Publication number Publication date
US4748646A (en) 1988-05-31
KR890001264B1 (ko) 1989-04-28
KR870009611A (ko) 1987-10-27
EP0238416A2 (de) 1987-09-23
JPS62222634A (ja) 1987-09-30
EP0238416A3 (en) 1988-08-31
EP0238416B1 (de) 1992-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee