DE3717727A1 - Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung - Google Patents
Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellungInfo
- Publication number
- DE3717727A1 DE3717727A1 DE19873717727 DE3717727A DE3717727A1 DE 3717727 A1 DE3717727 A1 DE 3717727A1 DE 19873717727 DE19873717727 DE 19873717727 DE 3717727 A DE3717727 A DE 3717727A DE 3717727 A1 DE3717727 A1 DE 3717727A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- hydrogen
- recording material
- sputtering
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 57
- 239000001257 hydrogen Substances 0.000 claims description 33
- 229910052739 hydrogen Inorganic materials 0.000 claims description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 238000001802 infusion Methods 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 14
- 101000878457 Macrocallista nimbosa FMRFamide Proteins 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08285—Carbon-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873717727 DE3717727A1 (de) | 1987-05-26 | 1987-05-26 | Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
| US07/201,432 US4900646A (en) | 1987-05-26 | 1988-05-24 | Electrophotographic recording material and method of producing it |
| JP63126057A JPS6487764A (en) | 1987-05-26 | 1988-05-25 | Electrophotographic recording material and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873717727 DE3717727A1 (de) | 1987-05-26 | 1987-05-26 | Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3717727A1 true DE3717727A1 (de) | 1988-12-08 |
| DE3717727C2 DE3717727C2 (enrdf_load_stackoverflow) | 1990-02-15 |
Family
ID=6328453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873717727 Granted DE3717727A1 (de) | 1987-05-26 | 1987-05-26 | Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4900646A (enrdf_load_stackoverflow) |
| JP (1) | JPS6487764A (enrdf_load_stackoverflow) |
| DE (1) | DE3717727A1 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3908078C1 (en) * | 1989-03-13 | 1990-08-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De | Electrophotographic recording material, and process for the production thereof |
| EP0443521A1 (en) * | 1990-02-20 | 1991-08-28 | Sharp Kabushiki Kaisha | Photosensitive member for electrophotography |
| DE102010063815A1 (de) * | 2010-12-21 | 2012-06-21 | Sgl Carbon Se | Kohlenstoff-Silizium-Mehrschichtsysteme |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5239397A (en) * | 1989-10-12 | 1993-08-24 | Sharp Kabushiki | Liquid crystal light valve with amorphous silicon photoconductor of amorphous silicon and hydrogen or a halogen |
| JPH04133313A (ja) * | 1990-09-25 | 1992-05-07 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
| TW237562B (enrdf_load_stackoverflow) | 1990-11-09 | 1995-01-01 | Semiconductor Energy Res Co Ltd | |
| US6979840B1 (en) | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
| US5866263A (en) * | 1996-04-26 | 1999-02-02 | Semi-Alloys Company | Adsorbent lid construction |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3245500A1 (de) * | 1982-12-09 | 1984-06-14 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
| EP0045204B1 (en) * | 1980-07-28 | 1984-11-07 | Hitachi, Ltd. | Electrophotographic member and electrophotographic apparatus including the member |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
| JPS56156836A (en) * | 1980-05-08 | 1981-12-03 | Minolta Camera Co Ltd | Electrophotographic receptor |
| US4412900A (en) * | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
| EP0249302B1 (en) * | 1986-01-23 | 1994-04-06 | Canon Kabushiki Kaisha | Light receiving member for use in electrophotography |
-
1987
- 1987-05-26 DE DE19873717727 patent/DE3717727A1/de active Granted
-
1988
- 1988-05-24 US US07/201,432 patent/US4900646A/en not_active Expired - Fee Related
- 1988-05-25 JP JP63126057A patent/JPS6487764A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0045204B1 (en) * | 1980-07-28 | 1984-11-07 | Hitachi, Ltd. | Electrophotographic member and electrophotographic apparatus including the member |
| DE3245500A1 (de) * | 1982-12-09 | 1984-06-14 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3908078C1 (en) * | 1989-03-13 | 1990-08-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De | Electrophotographic recording material, and process for the production thereof |
| EP0443521A1 (en) * | 1990-02-20 | 1991-08-28 | Sharp Kabushiki Kaisha | Photosensitive member for electrophotography |
| DE102010063815A1 (de) * | 2010-12-21 | 2012-06-21 | Sgl Carbon Se | Kohlenstoff-Silizium-Mehrschichtsysteme |
Also Published As
| Publication number | Publication date |
|---|---|
| US4900646A (en) | 1990-02-13 |
| JPS6487764A (en) | 1989-03-31 |
| DE3717727C2 (enrdf_load_stackoverflow) | 1990-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |