DE3212184C2 - - Google Patents
Info
- Publication number
- DE3212184C2 DE3212184C2 DE3212184A DE3212184A DE3212184C2 DE 3212184 C2 DE3212184 C2 DE 3212184C2 DE 3212184 A DE3212184 A DE 3212184A DE 3212184 A DE3212184 A DE 3212184A DE 3212184 C2 DE3212184 C2 DE 3212184C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- oxygen
- ppm
- boron
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 124
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 86
- 239000001301 oxygen Substances 0.000 claims description 86
- 229910052760 oxygen Inorganic materials 0.000 claims description 86
- 229910052796 boron Inorganic materials 0.000 claims description 47
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 46
- 125000004429 atom Chemical group 0.000 claims description 46
- 239000001257 hydrogen Substances 0.000 claims description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 145
- 239000007789 gas Substances 0.000 description 41
- 206010034960 Photophobia Diseases 0.000 description 23
- 206010034972 Photosensitivity reaction Diseases 0.000 description 23
- 230000036211 photosensitivity Effects 0.000 description 23
- 230000035945 sensitivity Effects 0.000 description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
- 229910052698 phosphorus Inorganic materials 0.000 description 22
- 239000011574 phosphorus Substances 0.000 description 22
- 208000013469 light sensitivity Diseases 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 15
- 230000005855 radiation Effects 0.000 description 12
- 239000012159 carrier gas Substances 0.000 description 7
- 229910017817 a-Ge Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 101100518161 Arabidopsis thaliana DIN4 gene Proteins 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000001976 improved effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- 241000357701 Polygona Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004677 spark ionization mass spectrometry Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058833A JPS57172344A (en) | 1981-04-17 | 1981-04-17 | Electrophotographic photorecepter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3212184A1 DE3212184A1 (de) | 1982-11-11 |
| DE3212184C2 true DE3212184C2 (enrdf_load_stackoverflow) | 1990-10-31 |
Family
ID=13095645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823212184 Granted DE3212184A1 (de) | 1981-04-17 | 1982-04-01 | Lichtempfindliches element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS57172344A (enrdf_load_stackoverflow) |
| DE (1) | DE3212184A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2551229A1 (fr) * | 1983-08-26 | 1985-03-01 | Canon Kk | Element photoconducteur pour electrophotographie |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045078A (ja) * | 1983-08-23 | 1985-03-11 | Canon Inc | 光導電部材 |
| JPS6045257A (ja) * | 1983-08-23 | 1985-03-11 | Canon Inc | 電子写真用光導電部材 |
| US4569893A (en) * | 1983-08-29 | 1986-02-11 | Canon Kabushiki Kaisha | Amorphous matrix of silicon and germanium having controlled conductivity |
| US4585719A (en) * | 1983-09-05 | 1986-04-29 | Canon Kabushiki Kaisha | Photoconductive member comprising (SI-GE)-SI and N |
| US4585721A (en) * | 1983-09-05 | 1986-04-29 | Canon Kabushiki Kaisha | Photoconductive member comprising amorphous germanium, amorphous silicon and nitrogen |
| US4587190A (en) * | 1983-09-05 | 1986-05-06 | Canon Kabushiki Kaisha | Photoconductive member comprising amorphous silicon-germanium and nitrogen |
| US4592979A (en) * | 1983-09-09 | 1986-06-03 | Canon Kabushiki Kaisha | Photoconductive member of amorphous germanium and silicon with nitrogen |
| US4595644A (en) * | 1983-09-12 | 1986-06-17 | Canon Kabushiki Kaisha | Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen |
| US4600671A (en) * | 1983-09-12 | 1986-07-15 | Canon Kabushiki Kaisha | Photoconductive member having light receiving layer of A-(Si-Ge) and N |
| JPS6079360A (ja) * | 1983-09-29 | 1985-05-07 | Kyocera Corp | 電子写真感光体及びその製造方法 |
| US4579797A (en) * | 1983-10-25 | 1986-04-01 | Canon Kabushiki Kaisha | Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant |
| AU558667B2 (en) * | 1984-04-06 | 1987-02-05 | Canon Kabushiki Kaisha | Light receiving member |
| US4705732A (en) * | 1984-04-27 | 1987-11-10 | Canon Kabushiki Kaisha | Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon |
| US4705731A (en) * | 1984-06-05 | 1987-11-10 | Canon Kabushiki Kaisha | Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer |
| FR2579825B1 (fr) * | 1985-03-28 | 1991-05-24 | Sumitomo Electric Industries | Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise |
| ES2022322B3 (es) * | 1986-02-05 | 1991-12-01 | Canon Kk | Miembro receptor de luz para electrofotografia |
| US4818655A (en) * | 1986-03-03 | 1989-04-04 | Canon Kabushiki Kaisha | Electrophotographic light receiving member with surface layer of a-(Six C1-x)y :H1-y wherein x is 0.1-0.99999 and y is 0.3-0.59 |
| WO1991012632A1 (de) * | 1990-02-07 | 1991-08-22 | Siemens Aktiengesellschaft | Lichtalterungsstabiles halbleitermaterial auf der basis von amorphem germanium und verfahren zu seiner herstellung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54145539A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
-
1981
- 1981-04-17 JP JP56058833A patent/JPS57172344A/ja active Pending
-
1982
- 1982-04-01 DE DE19823212184 patent/DE3212184A1/de active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2551229A1 (fr) * | 1983-08-26 | 1985-03-01 | Canon Kk | Element photoconducteur pour electrophotographie |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3212184A1 (de) | 1982-11-11 |
| JPS57172344A (en) | 1982-10-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8127 | New person/name/address of the applicant |
Owner name: MINOLTA CAMERA K.K., OSAKA, JP KAWAMURA, TAKAO, SA |
|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: G03G 5/082 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: MINOLTA CO., LTD., OSAKA, JP KAWAMURA, TAKAO, SAKA |