DE3212184A1 - Lichtempfindliches element - Google Patents
Lichtempfindliches elementInfo
- Publication number
- DE3212184A1 DE3212184A1 DE19823212184 DE3212184A DE3212184A1 DE 3212184 A1 DE3212184 A1 DE 3212184A1 DE 19823212184 DE19823212184 DE 19823212184 DE 3212184 A DE3212184 A DE 3212184A DE 3212184 A1 DE3212184 A1 DE 3212184A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- oxygen
- boron
- atom
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 108
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000001301 oxygen Substances 0.000 claims abstract description 86
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 86
- 229910052796 boron Inorganic materials 0.000 claims abstract description 48
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000001257 hydrogen Substances 0.000 claims abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 27
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 125000004429 atom Chemical group 0.000 claims description 59
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 149
- 239000007789 gas Substances 0.000 description 41
- 206010034972 Photosensitivity reaction Diseases 0.000 description 38
- 230000036211 photosensitivity Effects 0.000 description 38
- 230000035945 sensitivity Effects 0.000 description 26
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
- 229910052698 phosphorus Inorganic materials 0.000 description 22
- 239000011574 phosphorus Substances 0.000 description 22
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 20
- 229910052986 germanium hydride Inorganic materials 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 17
- 230000005855 radiation Effects 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 10
- 229910017817 a-Ge Inorganic materials 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 206010034960 Photophobia Diseases 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 208000013469 light sensitivity Diseases 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 101100518161 Arabidopsis thaliana DIN4 gene Proteins 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical group [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006939 Si0.5Ge0.5 Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- AHVNUGPIPKMDBB-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge].[Ge] AHVNUGPIPKMDBB-UHFFFAOYSA-N 0.000 description 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004677 spark ionization mass spectrometry Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058833A JPS57172344A (en) | 1981-04-17 | 1981-04-17 | Electrophotographic photorecepter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3212184A1 true DE3212184A1 (de) | 1982-11-11 |
| DE3212184C2 DE3212184C2 (enrdf_load_stackoverflow) | 1990-10-31 |
Family
ID=13095645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823212184 Granted DE3212184A1 (de) | 1981-04-17 | 1982-04-01 | Lichtempfindliches element |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS57172344A (enrdf_load_stackoverflow) |
| DE (1) | DE3212184A1 (enrdf_load_stackoverflow) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2551228A1 (fr) * | 1983-08-29 | 1985-03-01 | Canon Kk | Element photoconducteur pour electrophotographie |
| FR2551266A1 (fr) * | 1983-08-23 | 1985-03-01 | Canon Kk | Element photoconducteur utilisable en electrophotographie |
| FR2551562A1 (enrdf_load_stackoverflow) * | 1983-09-05 | 1985-03-08 | Canon Kk | |
| DE3430923A1 (de) * | 1983-08-23 | 1985-03-14 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3431450A1 (de) * | 1983-08-26 | 1985-03-21 | Canon K.K., Tokio/Tokyo | Photoleitfaehiges aufzeichnungsmaterial |
| DE3433507A1 (de) * | 1983-09-12 | 1985-03-28 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| DE3433160A1 (de) * | 1983-09-09 | 1985-03-28 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges element |
| DE3432480A1 (de) * | 1983-09-05 | 1985-04-04 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3432646A1 (de) * | 1983-09-05 | 1985-04-04 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| DE3433473A1 (de) * | 1983-09-12 | 1985-04-11 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| DE3435757A1 (de) * | 1983-09-29 | 1985-04-18 | Kawamura, Takao, Sakai, Osaka | Elektrophotographisch empfindliches element und verfahren zur herstellung desselben |
| EP0161783A1 (en) * | 1984-04-06 | 1985-11-21 | Canon Kabushiki Kaisha | Light receiving member |
| EP0161848A1 (en) * | 1984-04-27 | 1985-11-21 | Canon Kabushiki Kaisha | Light-receiving member |
| EP0169641A1 (en) * | 1984-06-05 | 1986-01-29 | Canon Kabushiki Kaisha | Light-receiving member |
| FR2569057A1 (fr) * | 1983-10-25 | 1986-02-14 | Canon Kk | Element photoconducteur |
| DE3610401A1 (de) * | 1985-03-28 | 1987-02-12 | Sumitomo Electric Industries | Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird |
| EP0236093A1 (en) * | 1986-03-03 | 1987-09-09 | Canon Kabushiki Kaisha | Light receiving member for use in electrophotography |
| EP0241111A1 (en) * | 1986-02-05 | 1987-10-14 | Canon Kabushiki Kaisha | Light-receiving member for electrophotography |
| WO1991012632A1 (de) * | 1990-02-07 | 1991-08-22 | Siemens Aktiengesellschaft | Lichtalterungsstabiles halbleitermaterial auf der basis von amorphem germanium und verfahren zu seiner herstellung |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54145539A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
-
1981
- 1981-04-17 JP JP56058833A patent/JPS57172344A/ja active Pending
-
1982
- 1982-04-01 DE DE19823212184 patent/DE3212184A1/de active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54145539A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2551266A1 (fr) * | 1983-08-23 | 1985-03-01 | Canon Kk | Element photoconducteur utilisable en electrophotographie |
| DE3430923A1 (de) * | 1983-08-23 | 1985-03-14 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3430913A1 (de) * | 1983-08-23 | 1985-03-21 | Canon K.K., Tokio/Tokyo | Fotoleitendes aufzeichnungsmaterial |
| FR2555819A1 (fr) * | 1983-08-23 | 1985-05-31 | Canon Kk | Element photoconducteur |
| DE3431450A1 (de) * | 1983-08-26 | 1985-03-21 | Canon K.K., Tokio/Tokyo | Photoleitfaehiges aufzeichnungsmaterial |
| FR2551228A1 (fr) * | 1983-08-29 | 1985-03-01 | Canon Kk | Element photoconducteur pour electrophotographie |
| DE3431753A1 (de) * | 1983-08-29 | 1985-03-21 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| FR2551562A1 (enrdf_load_stackoverflow) * | 1983-09-05 | 1985-03-08 | Canon Kk | |
| DE3432480A1 (de) * | 1983-09-05 | 1985-04-04 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3432646A1 (de) * | 1983-09-05 | 1985-04-04 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| DE3432645A1 (de) * | 1983-09-05 | 1985-04-04 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| DE3433160A1 (de) * | 1983-09-09 | 1985-03-28 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges element |
| DE3433473A1 (de) * | 1983-09-12 | 1985-04-11 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| DE3433507A1 (de) * | 1983-09-12 | 1985-03-28 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungselement |
| DE3435757A1 (de) * | 1983-09-29 | 1985-04-18 | Kawamura, Takao, Sakai, Osaka | Elektrophotographisch empfindliches element und verfahren zur herstellung desselben |
| FR2569057A1 (fr) * | 1983-10-25 | 1986-02-14 | Canon Kk | Element photoconducteur |
| EP0161783A1 (en) * | 1984-04-06 | 1985-11-21 | Canon Kabushiki Kaisha | Light receiving member |
| EP0161848A1 (en) * | 1984-04-27 | 1985-11-21 | Canon Kabushiki Kaisha | Light-receiving member |
| EP0169641A1 (en) * | 1984-06-05 | 1986-01-29 | Canon Kabushiki Kaisha | Light-receiving member |
| DE3610401A1 (de) * | 1985-03-28 | 1987-02-12 | Sumitomo Electric Industries | Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird |
| EP0241111A1 (en) * | 1986-02-05 | 1987-10-14 | Canon Kabushiki Kaisha | Light-receiving member for electrophotography |
| EP0236093A1 (en) * | 1986-03-03 | 1987-09-09 | Canon Kabushiki Kaisha | Light receiving member for use in electrophotography |
| WO1991012632A1 (de) * | 1990-02-07 | 1991-08-22 | Siemens Aktiengesellschaft | Lichtalterungsstabiles halbleitermaterial auf der basis von amorphem germanium und verfahren zu seiner herstellung |
| US5282993A (en) * | 1990-02-07 | 1994-02-01 | Siemens Aktiengesellschaft | Light-stable semiconductor material based on amorphous germanium and a method for its production |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3212184C2 (enrdf_load_stackoverflow) | 1990-10-31 |
| JPS57172344A (en) | 1982-10-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8127 | New person/name/address of the applicant |
Owner name: MINOLTA CAMERA K.K., OSAKA, JP KAWAMURA, TAKAO, SA |
|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: G03G 5/082 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: MINOLTA CO., LTD., OSAKA, JP KAWAMURA, TAKAO, SAKA |