DE3706127A1 - Diskontinuierliches aetzverfahren - Google Patents

Diskontinuierliches aetzverfahren

Info

Publication number
DE3706127A1
DE3706127A1 DE19873706127 DE3706127A DE3706127A1 DE 3706127 A1 DE3706127 A1 DE 3706127A1 DE 19873706127 DE19873706127 DE 19873706127 DE 3706127 A DE3706127 A DE 3706127A DE 3706127 A1 DE3706127 A1 DE 3706127A1
Authority
DE
Germany
Prior art keywords
layer
etching
resist
rie
reactive ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19873706127
Other languages
German (de)
English (en)
Other versions
DE3706127C2 (enExample
Inventor
Takuo Sugano
Hideharu Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
The University of Tokyo
Original Assignee
The University of Tokyo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The University of Tokyo filed Critical The University of Tokyo
Publication of DE3706127A1 publication Critical patent/DE3706127A1/de
Application granted granted Critical
Publication of DE3706127C2 publication Critical patent/DE3706127C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
DE19873706127 1986-04-28 1987-02-25 Diskontinuierliches aetzverfahren Granted DE3706127A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61097002A JPS62253785A (ja) 1986-04-28 1986-04-28 間欠的エツチング方法

Publications (2)

Publication Number Publication Date
DE3706127A1 true DE3706127A1 (de) 1987-10-29
DE3706127C2 DE3706127C2 (enExample) 1989-01-19

Family

ID=14180009

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873706127 Granted DE3706127A1 (de) 1986-04-28 1987-02-25 Diskontinuierliches aetzverfahren

Country Status (3)

Country Link
US (1) US4790903A (enExample)
JP (1) JPS62253785A (enExample)
DE (1) DE3706127A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5501893A (en) * 1992-12-05 1996-03-26 Robert Bosch Gmbh Method of anisotropically etching silicon
RU2161662C2 (ru) * 1999-03-29 2001-01-10 Слепцов Владимир Владимирович Способ обработки поверхности твердого тела
US7682518B2 (en) 2003-08-28 2010-03-23 Applied Materials, Inc. Process for etching a metal layer suitable for use in photomask fabrication
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4915779A (en) * 1988-08-23 1990-04-10 Motorola Inc. Residue-free plasma etch of high temperature AlCu
US4945069A (en) * 1988-12-16 1990-07-31 Texas Instruments, Incorporated Organic space holder for trench processing
US5169494A (en) * 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US5086248A (en) * 1989-08-18 1992-02-04 Galileo Electro-Optics Corporation Microchannel electron multipliers
US5205902A (en) * 1989-08-18 1993-04-27 Galileo Electro-Optics Corporation Method of manufacturing microchannel electron multipliers
ATE135496T1 (de) * 1990-03-27 1996-03-15 Canon Kk Dünnschicht-halbleiterbauelement
US5085676A (en) * 1990-12-04 1992-02-04 E. I. Du Pont De Nemours And Company Novel multicomponent fluid separation membranes
JP3041972B2 (ja) * 1991-01-10 2000-05-15 富士通株式会社 半導体装置の製造方法
JPH07183194A (ja) * 1993-12-24 1995-07-21 Sony Corp 多層レジストパターン形成方法
US5733657A (en) * 1994-10-11 1998-03-31 Praxair Technology, Inc. Method of preparing membranes from blends of polymers
AUPP590798A0 (en) * 1998-09-14 1998-10-08 Commonwealth Scientific And Industrial Research Organisation Method of manufacture of high temperature superconductors
AU773535B2 (en) * 1998-09-14 2004-05-27 Commonwealth Scientific And Industrial Research Organisation Superconducting device
US6383938B2 (en) 1999-04-21 2002-05-07 Alcatel Method of anisotropic etching of substrates
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
US6291357B1 (en) 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
US6849554B2 (en) 2002-05-01 2005-02-01 Applied Materials, Inc. Method of etching a deep trench having a tapered profile in silicon
US7154086B2 (en) * 2003-03-19 2006-12-26 Burle Technologies, Inc. Conductive tube for use as a reflectron lens
US20040224524A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Maintaining the dimensions of features being etched on a lithographic mask
US7352064B2 (en) * 2004-11-04 2008-04-01 International Business Machines Corporation Multiple layer resist scheme implementing etch recipe particular to each layer
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US20080073516A1 (en) * 2006-03-10 2008-03-27 Laprade Bruce N Resistive glass structures used to shape electric fields in analytical instruments
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US7786019B2 (en) * 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
US9941121B1 (en) 2017-01-24 2018-04-10 International Business Machines Corporation Selective dry etch for directed self assembly of block copolymers
CN115440585A (zh) * 2022-09-01 2022-12-06 中国科学院光电技术研究所 金属纳米结构及其离子束刻蚀加工方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS563669A (en) * 1979-06-20 1981-01-14 Fuji Denshi Kogyo Kk Ion-treating method
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
JPS56123381A (en) * 1980-01-24 1981-09-28 Fujitsu Ltd Method and device for plasma etching
US4417948A (en) * 1982-07-09 1983-11-29 International Business Machines Corporation Self developing, photoetching of polyesters by far UV radiation
US4587184A (en) * 1983-07-27 1986-05-06 Siemens Aktiengesellschaft Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS ERMITTELT *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5501893A (en) * 1992-12-05 1996-03-26 Robert Bosch Gmbh Method of anisotropically etching silicon
RU2161662C2 (ru) * 1999-03-29 2001-01-10 Слепцов Владимир Владимирович Способ обработки поверхности твердого тела
US7682518B2 (en) 2003-08-28 2010-03-23 Applied Materials, Inc. Process for etching a metal layer suitable for use in photomask fabrication
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication

Also Published As

Publication number Publication date
US4790903A (en) 1988-12-13
JPS641555B2 (enExample) 1989-01-11
DE3706127C2 (enExample) 1989-01-19
JPS62253785A (ja) 1987-11-05

Similar Documents

Publication Publication Date Title
DE3706127C2 (enExample)
EP0010596B1 (de) Verfahren zur Ausbildung von Maskenöffnungen bei der Herstellung von Halbleiteranordnungen
DE3841588C2 (enExample)
EP0001100B1 (de) Verfahren zum Herstellen von in Silicium eingelegten dielektrischen Isolationsbereichen mittels geladener und beschleunigter Teilchen
EP0000897B1 (de) Verfahren zum Herstellen von lateral isolierten Siliciumbereichen
EP0286708B1 (de) Verfahren zur Herstellung von Kontaktöffnungen in einer Doppellagenisolation
DE69409347T2 (de) Verfahren zum Herstellen von Halbleitervorrichtungen
DE4002352A1 (de) Verfahren zum herstellen von luftbruecken-metall-zwischenverbindern
EP0094528A2 (de) Verfahren zum Herstellen von Strukturen von aus Metallsilizid und Polysilizium bestehenden Doppelschichten auf integrierte Halbleiterschaltungen enthaltenden Substraten durch reaktives Ionenätzen
DE2611158A1 (de) Verfahren zum herstellen von oeffnungen in siliciumkoerpern
EP0057254B1 (de) Verfahren zur Erzeugung von extremen Feinstrukturen
DE2844162A1 (de) Ionenimplantationsverfahren und dessen anwendung
DE2928923C2 (enExample)
EP0002185A1 (de) Verfahren zum Herstellen einer Verbindung zwischen zwei sich kreuzenden, auf der Oberfläche eines Substrats verlaufenden Leiterzügen
DE2636971C2 (de) Verfahren zum Herstellen einer isolierenden Schicht mit ebener Oberfläche auf einer unebenen Oberfläche eines Substrats
DE3000746C2 (de) Verfahren zur Erzeugung von mikroskopischen Bildern
DE2723944A1 (de) Anordnung aus einer strukturierten schicht und einem muster festgelegter dicke und verfahren zu ihrer herstellung
EP0002669A1 (de) Verfahren zum Entfernen von Material von einem Substrat durch selektive Trockemätzung und Anwendung dieses Verfahrens bei der Herstellung von Leitungsmustern
EP0338102B1 (de) Verfahren zur Herstellung von integrierten Halbleiterstrukturen welche Feldeffekttransistoren mit Kanallängen im Submikrometerbereich enthalten
DE2734982A1 (de) Verfahren zum herstellen von silicium enthaltenden leiterzuegen
DE69730143T2 (de) Feldemissionselektronenquelle und sein Herstellungsverfahren
DE2432719B2 (de) Verfahren zum erzeugen von feinen strukturen aus aufdampfbaren materialien auf einer unterlage und anwendung des verfahrens
DE2047799C3 (de) Mehrlagige Leiterschichten auf einem Halbleitersubstrat und Verfahren zum Herstellen derartiger mehrlagiger Leiterschichten
DE2361804C2 (de) Verfahren zur Herstellung von supraleitenden Kontakten in Tieftemperatur-Schaltkreisen und Anwendung des Verfahrens bei der Herstellung von Tieftemperatur-Schaltkreisen mit Josephson-Elementen
DE3689971T2 (de) Herstellung einer halbleiteranordnung.

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8380 Miscellaneous part iii

Free format text: DAS AKTENZEICHEN AUF DER TITELSEITE DER PATENTSCHRIFT LAUTET RICHTIG : P 37 06 127.5-45

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee