JPS563669A - Ion-treating method - Google Patents

Ion-treating method

Info

Publication number
JPS563669A
JPS563669A JP7855079A JP7855079A JPS563669A JP S563669 A JPS563669 A JP S563669A JP 7855079 A JP7855079 A JP 7855079A JP 7855079 A JP7855079 A JP 7855079A JP S563669 A JPS563669 A JP S563669A
Authority
JP
Japan
Prior art keywords
different
ion
work pieces
lanes
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7855079A
Other languages
Japanese (ja)
Other versions
JPS5753860B2 (en
Inventor
Hiyoshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electronics Industry Co Ltd
Original Assignee
Fuji Electronics Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electronics Industry Co Ltd filed Critical Fuji Electronics Industry Co Ltd
Priority to JP7855079A priority Critical patent/JPS563669A/en
Publication of JPS563669A publication Critical patent/JPS563669A/en
Publication of JPS5753860B2 publication Critical patent/JPS5753860B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Furnace Charging Or Discharging (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To make possible the ion-treatment of different work pieces in a continuous furnace, by letting plural intermittently traveling lanes arranged in the continuous furnace for ion-treatment pass in parallel with each other at different speeds. CONSTITUTION:Ion-treatments of different finish or of the same finish of work pieces different in kind, density, and quality, or ion-treatments of different finish of work pieces of the same kind are performed simultaneously and in parallel. That is, one or more kinds of work pieces are distributed to respective lanes, or different kinds of work pieces are classified and distributed to respective different lanes, then they are subjected to ion-treatment by glow discharge. For example, W1, W2, W3 are placed respectively on the plural lanes 21, 22, 23 arranged in a continuous furnace 1 and are made travel on respective rails intermittently and in parallel at different speeds. The work pieces are treated respectively in a preheating chamber 12, a treating chamber 11 filled with atmosphere gas and kept at a constant temp., and in a gas-cooled chamber 13. Hereby treatment efficiency is remarkably increased.
JP7855079A 1979-06-20 1979-06-20 Ion-treating method Granted JPS563669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7855079A JPS563669A (en) 1979-06-20 1979-06-20 Ion-treating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7855079A JPS563669A (en) 1979-06-20 1979-06-20 Ion-treating method

Publications (2)

Publication Number Publication Date
JPS563669A true JPS563669A (en) 1981-01-14
JPS5753860B2 JPS5753860B2 (en) 1982-11-15

Family

ID=13665017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7855079A Granted JPS563669A (en) 1979-06-20 1979-06-20 Ion-treating method

Country Status (1)

Country Link
JP (1) JPS563669A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246537A (en) * 1985-08-23 1987-02-28 Nec Corp Manufacture of film carrier semiconductor device
JPS62147741A (en) * 1985-12-20 1987-07-01 Nec Corp Substrate for sorting semiconductor element and sorting method for the element
JPS62253785A (en) * 1986-04-28 1987-11-05 Tokyo Univ Intermittent etching method
CN106756763A (en) * 2015-11-24 2017-05-31 西安航空动力控制科技有限公司 A kind of method that part of different materials carries out glow discharge nitriding with stove

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246537A (en) * 1985-08-23 1987-02-28 Nec Corp Manufacture of film carrier semiconductor device
JPS62147741A (en) * 1985-12-20 1987-07-01 Nec Corp Substrate for sorting semiconductor element and sorting method for the element
JPS62253785A (en) * 1986-04-28 1987-11-05 Tokyo Univ Intermittent etching method
CN106756763A (en) * 2015-11-24 2017-05-31 西安航空动力控制科技有限公司 A kind of method that part of different materials carries out glow discharge nitriding with stove

Also Published As

Publication number Publication date
JPS5753860B2 (en) 1982-11-15

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