DE3688516D1 - Herstellungsverfahren fuer einem bipolaren transistor mit heterouebergang. - Google Patents

Herstellungsverfahren fuer einem bipolaren transistor mit heterouebergang.

Info

Publication number
DE3688516D1
DE3688516D1 DE8686104067T DE3688516T DE3688516D1 DE 3688516 D1 DE3688516 D1 DE 3688516D1 DE 8686104067 T DE8686104067 T DE 8686104067T DE 3688516 T DE3688516 T DE 3688516T DE 3688516 D1 DE3688516 D1 DE 3688516D1
Authority
DE
Germany
Prior art keywords
heterover
transition
manufacturing
bipolar transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686104067T
Other languages
English (en)
Other versions
DE3688516T2 (de
Inventor
Tadatsugu Itoh
Hideaki Kohzu
Yasuhiro Hosono Yasuhir Hosono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3688516D1 publication Critical patent/DE3688516D1/de
Application granted granted Critical
Publication of DE3688516T2 publication Critical patent/DE3688516T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE86104067T 1985-03-25 1986-03-25 Herstellungsverfahren für einem bipolaren Transistor mit Heteroübergang. Expired - Lifetime DE3688516T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5995785 1985-03-25
JP5995885 1985-03-25

Publications (2)

Publication Number Publication Date
DE3688516D1 true DE3688516D1 (de) 1993-07-08
DE3688516T2 DE3688516T2 (de) 1993-10-07

Family

ID=26401021

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86104067T Expired - Lifetime DE3688516T2 (de) 1985-03-25 1986-03-25 Herstellungsverfahren für einem bipolaren Transistor mit Heteroübergang.

Country Status (4)

Country Link
US (1) US4823174A (de)
EP (1) EP0197424B1 (de)
JP (1) JP2553510B2 (de)
DE (1) DE3688516T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
US5939738A (en) * 1995-10-25 1999-08-17 Texas Instruments Incorporated Low base-resistance bipolar transistor
JP3086906B1 (ja) 1999-05-28 2000-09-11 工業技術院長 電界効果トランジスタ及びその製造方法
KR100332106B1 (ko) * 1999-06-29 2002-04-10 박종섭 반도체 소자의 트랜지스터 제조 방법
JP3425603B2 (ja) 2000-01-28 2003-07-14 独立行政法人産業技術総合研究所 電界効果トランジスタの製造方法
US7359888B2 (en) * 2003-01-31 2008-04-15 Hewlett-Packard Development Company, L.P. Molecular-junction-nanowire-crossbar-based neural network
WO2007008579A2 (en) * 2005-07-08 2007-01-18 Zmos Technology, Inc. Source transistor configurations and control methods
US8894504B1 (en) * 2013-01-16 2014-11-25 Stacy Keisler Golf putting training device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4611388A (en) * 1983-04-14 1986-09-16 Allied Corporation Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor
JPS6010776A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd バイポーラトランジスタの製造方法

Also Published As

Publication number Publication date
EP0197424B1 (de) 1993-06-02
EP0197424A3 (en) 1988-05-25
US4823174A (en) 1989-04-18
JP2553510B2 (ja) 1996-11-13
EP0197424A2 (de) 1986-10-15
JPS621270A (ja) 1987-01-07
DE3688516T2 (de) 1993-10-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP