DE3579227D1 - Lichtemittierende halbleiteranordnung mit einem uebergitter. - Google Patents

Lichtemittierende halbleiteranordnung mit einem uebergitter.

Info

Publication number
DE3579227D1
DE3579227D1 DE8585308679T DE3579227T DE3579227D1 DE 3579227 D1 DE3579227 D1 DE 3579227D1 DE 8585308679 T DE8585308679 T DE 8585308679T DE 3579227 T DE3579227 T DE 3579227T DE 3579227 D1 DE3579227 D1 DE 3579227D1
Authority
DE
Germany
Prior art keywords
light
emitting semiconductor
semiconductor arrangement
top grid
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585308679T
Other languages
English (en)
Inventor
Toshiro Hayakawa
Takahiro Suyama
Kohsei Takahashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3579227D1 publication Critical patent/DE3579227D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/342—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing short period superlattices [SPS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE8585308679T 1984-12-07 1985-11-28 Lichtemittierende halbleiteranordnung mit einem uebergitter. Expired - Lifetime DE3579227D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25957184A JPH0669109B2 (ja) 1984-12-07 1984-12-07 光半導体装置

Publications (1)

Publication Number Publication Date
DE3579227D1 true DE3579227D1 (de) 1990-09-20

Family

ID=17335969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585308679T Expired - Lifetime DE3579227D1 (de) 1984-12-07 1985-11-28 Lichtemittierende halbleiteranordnung mit einem uebergitter.

Country Status (4)

Country Link
US (1) US4761790A (de)
EP (1) EP0188080B1 (de)
JP (1) JPH0669109B2 (de)
DE (1) DE3579227D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0728080B2 (ja) * 1984-09-25 1995-03-29 日本電気株式会社 半導体超格子構造体
CA1279394C (en) * 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
US4864370A (en) * 1987-11-16 1989-09-05 Motorola, Inc. Electrical contact for an LED
JPH01312871A (ja) * 1988-06-10 1989-12-18 Omron Tateisi Electron Co スリット光用半導体発光ダイオード
DE3910288A1 (de) * 1989-03-30 1990-10-04 Standard Elektrik Lorenz Ag Verfahren zur herstellung monolithisch integrierter optoelektronischer module
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
JPH05291686A (ja) * 1992-04-14 1993-11-05 Matsushita Electric Ind Co Ltd 半導体レーザ
US6707063B2 (en) * 2001-03-22 2004-03-16 Hewlett-Packard Development Company, L.P. Passivation layer for molecular electronic device fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
NL8301215A (nl) * 1983-04-07 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JPH0728080B2 (ja) * 1984-09-25 1995-03-29 日本電気株式会社 半導体超格子構造体

Also Published As

Publication number Publication date
EP0188080A1 (de) 1986-07-23
EP0188080B1 (de) 1990-08-16
US4761790A (en) 1988-08-02
JPH0669109B2 (ja) 1994-08-31
JPS61137384A (ja) 1986-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition