DE3686970D1 - Halbleiterlaservorrichtung vom vergrabenen typ. - Google Patents

Halbleiterlaservorrichtung vom vergrabenen typ.

Info

Publication number
DE3686970D1
DE3686970D1 DE8686306486T DE3686970T DE3686970D1 DE 3686970 D1 DE3686970 D1 DE 3686970D1 DE 8686306486 T DE8686306486 T DE 8686306486T DE 3686970 T DE3686970 T DE 3686970T DE 3686970 D1 DE3686970 D1 DE 3686970D1
Authority
DE
Germany
Prior art keywords
semi
laser device
conducted laser
conducted
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686306486T
Other languages
English (en)
Other versions
DE3686970T2 (de
Inventor
Toshihiko Yoshida
Haruhisa Takiguchi
Shinji Kaneiwa
Hiroaki Kudo
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18465085A external-priority patent/JPS6245088A/ja
Priority claimed from JP20116185A external-priority patent/JPS6260285A/ja
Priority claimed from JP20246385A external-priority patent/JPS6261386A/ja
Priority claimed from JP20362785A external-priority patent/JPS6262583A/ja
Priority claimed from JP20786985A external-priority patent/JPS6266694A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3686970D1 publication Critical patent/DE3686970D1/de
Application granted granted Critical
Publication of DE3686970T2 publication Critical patent/DE3686970T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686306486T 1985-08-21 1986-08-21 Halbleiterlaservorrichtung vom vergrabenen typ. Expired - Fee Related DE3686970T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP18465085A JPS6245088A (ja) 1985-08-21 1985-08-21 半導体レ−ザ素子
JP20116185A JPS6260285A (ja) 1985-09-10 1985-09-10 半導体レ−ザ素子
JP20246385A JPS6261386A (ja) 1985-09-11 1985-09-11 半導体レ−ザ素子
JP20362785A JPS6262583A (ja) 1985-09-12 1985-09-12 半導体レ−ザ素子
JP20786985A JPS6266694A (ja) 1985-09-19 1985-09-19 半導体レ−ザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE3686970D1 true DE3686970D1 (de) 1992-11-19
DE3686970T2 DE3686970T2 (de) 1993-03-11

Family

ID=27528876

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686306486T Expired - Fee Related DE3686970T2 (de) 1985-08-21 1986-08-21 Halbleiterlaservorrichtung vom vergrabenen typ.

Country Status (3)

Country Link
US (4) US4839900A (de)
EP (1) EP0212977B1 (de)
DE (1) DE3686970T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63144589A (ja) * 1986-12-09 1988-06-16 Sharp Corp 半導体レ−ザ素子
DE3714523A1 (de) * 1987-04-30 1988-11-10 Siemens Ag Laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung und verfahren zu deren herstellung
JPS649682A (en) * 1987-07-01 1989-01-12 Nec Corp Distributed feedback semiconductor laser
EP0450255B1 (de) * 1990-04-06 1994-07-06 International Business Machines Corporation Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers
US5208821A (en) * 1992-01-24 1993-05-04 At&T Bell Laboratories Buried heterostructure lasers using MOCVD growth over patterned substrates
JP2865000B2 (ja) * 1994-10-27 1999-03-08 日本電気株式会社 出力導波路集積半導体レーザとその製造方法
JP3517091B2 (ja) * 1997-07-04 2004-04-05 東芝電子エンジニアリング株式会社 窒化ガリウム系半導体発光素子およびその製造方法
JPH11354886A (ja) * 1998-06-10 1999-12-24 Nec Corp 半導体レーザおよびその製造方法
TW567575B (en) * 2001-03-29 2003-12-21 Toshiba Corp Fabrication method of semiconductor device and semiconductor device
US8158527B2 (en) * 2001-04-20 2012-04-17 Kabushiki Kaisha Toshiba Semiconductor device fabrication method using multiple resist patterns

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow
JPS5553473A (en) * 1978-10-16 1980-04-18 Fujitsu Ltd Semiconductor light emission device
JPS56155583A (en) * 1980-04-30 1981-12-01 Fujitsu Ltd Manufacture of semiconductor laser
JPS5769791A (en) * 1980-10-17 1982-04-28 Nec Corp Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
US4470143A (en) * 1981-08-18 1984-09-04 Nippon Electric Co., Ltd. Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector
JPS5848491A (ja) * 1981-09-17 1983-03-22 Nec Corp 埋め込み型半導体レ−ザ
JPS5853876A (ja) * 1981-09-25 1983-03-30 Nec Corp 半導体レ−ザの製造方法
JPS58170089A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体発光装置の製造方法
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPS6088487A (ja) * 1983-10-20 1985-05-18 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS60149184A (ja) * 1984-01-14 1985-08-06 Oki Electric Ind Co Ltd 半導体レ−ザ素子の製造方法
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
JPS61102089A (ja) * 1984-10-25 1986-05-20 松下電工株式会社 フラツトパツケ−ジｉｃの実装構造
JPS61284987A (ja) * 1985-06-10 1986-12-15 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
US4908831A (en) 1990-03-13
US4908830A (en) 1990-03-13
EP0212977A3 (en) 1990-01-31
US4841534A (en) 1989-06-20
EP0212977A2 (de) 1987-03-04
DE3686970T2 (de) 1993-03-11
US4839900A (en) 1989-06-13
EP0212977B1 (de) 1992-10-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee