DE3672729D1 - Verfahren zur herstellung eines schalttransistors fuer einen flachen bildschirm und nach diesem verfahren hergestelltes schaltelement. - Google Patents

Verfahren zur herstellung eines schalttransistors fuer einen flachen bildschirm und nach diesem verfahren hergestelltes schaltelement.

Info

Publication number
DE3672729D1
DE3672729D1 DE8686401863T DE3672729T DE3672729D1 DE 3672729 D1 DE3672729 D1 DE 3672729D1 DE 8686401863 T DE8686401863 T DE 8686401863T DE 3672729 T DE3672729 T DE 3672729T DE 3672729 D1 DE3672729 D1 DE 3672729D1
Authority
DE
Germany
Prior art keywords
producing
flat screen
element produced
switching element
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686401863T
Other languages
English (en)
Inventor
Francois Boulitrop
Eric Chartier
Bruno Mourey
Berre Serge Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3672729D1 publication Critical patent/DE3672729D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
DE8686401863T 1985-08-27 1986-08-22 Verfahren zur herstellung eines schalttransistors fuer einen flachen bildschirm und nach diesem verfahren hergestelltes schaltelement. Expired - Fee Related DE3672729D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8512804A FR2586859B1 (fr) 1985-08-27 1985-08-27 Procede de fabrication d'un transistor de commande pour ecran plat de visualisation et element de commande realise selon ce procede

Publications (1)

Publication Number Publication Date
DE3672729D1 true DE3672729D1 (de) 1990-08-23

Family

ID=9322434

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686401863T Expired - Fee Related DE3672729D1 (de) 1985-08-27 1986-08-22 Verfahren zur herstellung eines schalttransistors fuer einen flachen bildschirm und nach diesem verfahren hergestelltes schaltelement.

Country Status (5)

Country Link
US (1) US4697331A (de)
EP (1) EP0216673B1 (de)
JP (1) JPS6252970A (de)
DE (1) DE3672729D1 (de)
FR (1) FR2586859B1 (de)

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US5123847A (en) * 1983-05-11 1992-06-23 Holmberg Scott H Method of manufacturing flat panel backplanes, display transistors
FR2593630B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran
FR2593632B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active et procedes de realisation de cet ecran
DE3714164A1 (de) * 1986-04-30 1987-11-05 Sharp Kk Fluessigkristallanzeige
JPS62265756A (ja) * 1986-05-14 1987-11-18 Oki Electric Ind Co Ltd 薄膜トランジスタマトリクス
US4907040A (en) * 1986-09-17 1990-03-06 Konishiroku Photo Industry Co., Ltd. Thin film Schottky barrier device
US4728175A (en) * 1986-10-09 1988-03-01 Ovonic Imaging Systems, Inc. Liquid crystal display having pixels with auxiliary capacitance
US4810061A (en) * 1987-06-24 1989-03-07 Alps Electric Co., Ltd. Liquid crystal element having conductive wiring part extending from top of transistor light shield to edge
US4778258A (en) * 1987-10-05 1988-10-18 General Electric Company Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays
US4949141A (en) * 1988-02-04 1990-08-14 Amoco Corporation Vertical gate thin film transistors in liquid crystal array
US5013877A (en) * 1988-02-08 1991-05-07 Raychem Corporation Devices for electrical connection
JPH0814668B2 (ja) * 1988-02-16 1996-02-14 シャープ株式会社 マトリックス型液晶表示パネル
JPH01217325A (ja) * 1988-02-25 1989-08-30 Sharp Corp 液晶表示装置
US5231039A (en) * 1988-02-25 1993-07-27 Sharp Kabushiki Kaisha Method of fabricating a liquid crystal display device
EP0333151B1 (de) * 1988-03-18 1993-10-20 Seiko Epson Corporation Dünnfilmtransistor
JP2678024B2 (ja) * 1988-08-18 1997-11-17 松下電器産業株式会社 画像表示装置半導体装置及びその製造方法
US4965646A (en) * 1988-10-21 1990-10-23 General Electric Company Thin film transistor and crossover structure for liquid crystal displays
US4951113A (en) * 1988-11-07 1990-08-21 Xerox Corporation Simultaneously deposited thin film CMOS TFTs and their method of fabrication
JP2757207B2 (ja) * 1989-05-24 1998-05-25 株式会社リコー 液晶表示装置
US5165165A (en) * 1989-06-02 1992-11-24 Canon Kabushiki Kaisha Part inserting apparatus and method for use
JP2508851B2 (ja) * 1989-08-23 1996-06-19 日本電気株式会社 液晶表示素子用アクティブマトリクス基板とその製造方法
US5153142A (en) * 1990-09-04 1992-10-06 Industrial Technology Research Institute Method for fabricating an indium tin oxide electrode for a thin film transistor
KR960002202B1 (ko) * 1991-02-04 1996-02-13 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 액정 전기 광학 장치 제작 방법
JP3172841B2 (ja) * 1992-02-19 2001-06-04 株式会社日立製作所 薄膜トランジスタとその製造方法及び液晶表示装置
US5414283A (en) * 1993-11-19 1995-05-09 Ois Optical Imaging Systems, Inc. TFT with reduced parasitic capacitance
FR2714765B1 (fr) * 1993-12-30 1996-02-02 France Telecom Procédé de réalisation d'une connexion électrique entre deux couches conductrices.
FR2714766B1 (fr) * 1993-12-30 1996-02-02 France Telecom Procédé de fabrication d'un écran d'affichage à matrice active.
FR2718876B1 (fr) * 1994-04-15 1998-03-27 Thomson Lcd Procédé de fabrication d'un TFT étagé inverse.
FR2718885B1 (fr) * 1994-04-15 1996-07-05 Thomson Lcd Procédé de fabrication d'un TFT étagé inverse.
US5523604A (en) * 1994-05-13 1996-06-04 International Rectifier Corporation Amorphous silicon layer for top surface of semiconductor device
FR2737342B1 (fr) * 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
US6069370A (en) * 1997-03-26 2000-05-30 Nec Corporation Field-effect transistor and fabrication method thereof and image display apparatus
JP2842426B2 (ja) * 1997-01-28 1999-01-06 日本電気株式会社 アクティブマトリクス型液晶表示装置およびその製造方法
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
TW560001B (en) * 2002-10-22 2003-11-01 Toppoly Optoelectronics Corp Method of forming reflective liquid crystal display and driving circuit

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
US4413883A (en) * 1979-05-31 1983-11-08 Northern Telecom Limited Displays controlled by MIM switches of small capacitance
JPS56107287A (en) * 1980-01-31 1981-08-26 Tokyo Shibaura Electric Co Image display unit
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
US4517733A (en) * 1981-01-06 1985-05-21 Fuji Xerox Co., Ltd. Process for fabricating thin film image pick-up element
FR2505070B1 (fr) * 1981-01-16 1986-04-04 Suwa Seikosha Kk Dispositif non lineaire pour un panneau d'affichage a cristaux liquides et procede de fabrication d'un tel panneau d'affichage
JPH0620122B2 (ja) * 1982-01-19 1994-03-16 キヤノン株式会社 半導体素子
US4398340A (en) * 1982-04-26 1983-08-16 The United States Of America As Represented By The Secretary Of The Army Method for making thin film field effect transistors
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
JPS59123884A (ja) * 1982-12-29 1984-07-17 シャープ株式会社 液晶表示装置の駆動方法
JPS59204274A (ja) * 1983-05-06 1984-11-19 Seiko Instr & Electronics Ltd 薄膜トランジスタ
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4547789A (en) * 1983-11-08 1985-10-15 Energy Conversion Devices, Inc. High current thin film transistor
US4639087A (en) * 1984-08-08 1987-01-27 Energy Conversion Devices, Inc. Displays having pixels with two portions and capacitors

Also Published As

Publication number Publication date
FR2586859B1 (fr) 1987-11-20
EP0216673A1 (de) 1987-04-01
US4697331A (en) 1987-10-06
JPS6252970A (ja) 1987-03-07
EP0216673B1 (de) 1990-07-18
FR2586859A1 (fr) 1987-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee