DE3672729D1 - Verfahren zur herstellung eines schalttransistors fuer einen flachen bildschirm und nach diesem verfahren hergestelltes schaltelement. - Google Patents
Verfahren zur herstellung eines schalttransistors fuer einen flachen bildschirm und nach diesem verfahren hergestelltes schaltelement.Info
- Publication number
- DE3672729D1 DE3672729D1 DE8686401863T DE3672729T DE3672729D1 DE 3672729 D1 DE3672729 D1 DE 3672729D1 DE 8686401863 T DE8686401863 T DE 8686401863T DE 3672729 T DE3672729 T DE 3672729T DE 3672729 D1 DE3672729 D1 DE 3672729D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- flat screen
- element produced
- switching element
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8512804A FR2586859B1 (fr) | 1985-08-27 | 1985-08-27 | Procede de fabrication d'un transistor de commande pour ecran plat de visualisation et element de commande realise selon ce procede |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3672729D1 true DE3672729D1 (de) | 1990-08-23 |
Family
ID=9322434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686401863T Expired - Fee Related DE3672729D1 (de) | 1985-08-27 | 1986-08-22 | Verfahren zur herstellung eines schalttransistors fuer einen flachen bildschirm und nach diesem verfahren hergestelltes schaltelement. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4697331A (de) |
EP (1) | EP0216673B1 (de) |
JP (1) | JPS6252970A (de) |
DE (1) | DE3672729D1 (de) |
FR (1) | FR2586859B1 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5123847A (en) * | 1983-05-11 | 1992-06-23 | Holmberg Scott H | Method of manufacturing flat panel backplanes, display transistors |
FR2593630B1 (fr) * | 1986-01-27 | 1988-03-18 | Maurice Francois | Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran |
FR2593632B1 (fr) * | 1986-01-27 | 1988-03-18 | Maurice Francois | Ecran d'affichage a matrice active et procedes de realisation de cet ecran |
DE3714164A1 (de) * | 1986-04-30 | 1987-11-05 | Sharp Kk | Fluessigkristallanzeige |
JPS62265756A (ja) * | 1986-05-14 | 1987-11-18 | Oki Electric Ind Co Ltd | 薄膜トランジスタマトリクス |
US4907040A (en) * | 1986-09-17 | 1990-03-06 | Konishiroku Photo Industry Co., Ltd. | Thin film Schottky barrier device |
US4728175A (en) * | 1986-10-09 | 1988-03-01 | Ovonic Imaging Systems, Inc. | Liquid crystal display having pixels with auxiliary capacitance |
US4810061A (en) * | 1987-06-24 | 1989-03-07 | Alps Electric Co., Ltd. | Liquid crystal element having conductive wiring part extending from top of transistor light shield to edge |
US4778258A (en) * | 1987-10-05 | 1988-10-18 | General Electric Company | Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays |
US4949141A (en) * | 1988-02-04 | 1990-08-14 | Amoco Corporation | Vertical gate thin film transistors in liquid crystal array |
US5013877A (en) * | 1988-02-08 | 1991-05-07 | Raychem Corporation | Devices for electrical connection |
JPH0814668B2 (ja) * | 1988-02-16 | 1996-02-14 | シャープ株式会社 | マトリックス型液晶表示パネル |
JPH01217325A (ja) * | 1988-02-25 | 1989-08-30 | Sharp Corp | 液晶表示装置 |
US5231039A (en) * | 1988-02-25 | 1993-07-27 | Sharp Kabushiki Kaisha | Method of fabricating a liquid crystal display device |
EP0333151B1 (de) * | 1988-03-18 | 1993-10-20 | Seiko Epson Corporation | Dünnfilmtransistor |
JP2678024B2 (ja) * | 1988-08-18 | 1997-11-17 | 松下電器産業株式会社 | 画像表示装置半導体装置及びその製造方法 |
US4965646A (en) * | 1988-10-21 | 1990-10-23 | General Electric Company | Thin film transistor and crossover structure for liquid crystal displays |
US4951113A (en) * | 1988-11-07 | 1990-08-21 | Xerox Corporation | Simultaneously deposited thin film CMOS TFTs and their method of fabrication |
JP2757207B2 (ja) * | 1989-05-24 | 1998-05-25 | 株式会社リコー | 液晶表示装置 |
US5165165A (en) * | 1989-06-02 | 1992-11-24 | Canon Kabushiki Kaisha | Part inserting apparatus and method for use |
JP2508851B2 (ja) * | 1989-08-23 | 1996-06-19 | 日本電気株式会社 | 液晶表示素子用アクティブマトリクス基板とその製造方法 |
US5153142A (en) * | 1990-09-04 | 1992-10-06 | Industrial Technology Research Institute | Method for fabricating an indium tin oxide electrode for a thin film transistor |
KR960002202B1 (ko) * | 1991-02-04 | 1996-02-13 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 액정 전기 광학 장치 제작 방법 |
JP3172841B2 (ja) * | 1992-02-19 | 2001-06-04 | 株式会社日立製作所 | 薄膜トランジスタとその製造方法及び液晶表示装置 |
US5414283A (en) * | 1993-11-19 | 1995-05-09 | Ois Optical Imaging Systems, Inc. | TFT with reduced parasitic capacitance |
FR2714765B1 (fr) * | 1993-12-30 | 1996-02-02 | France Telecom | Procédé de réalisation d'une connexion électrique entre deux couches conductrices. |
FR2714766B1 (fr) * | 1993-12-30 | 1996-02-02 | France Telecom | Procédé de fabrication d'un écran d'affichage à matrice active. |
FR2718876B1 (fr) * | 1994-04-15 | 1998-03-27 | Thomson Lcd | Procédé de fabrication d'un TFT étagé inverse. |
FR2718885B1 (fr) * | 1994-04-15 | 1996-07-05 | Thomson Lcd | Procédé de fabrication d'un TFT étagé inverse. |
US5523604A (en) * | 1994-05-13 | 1996-06-04 | International Rectifier Corporation | Amorphous silicon layer for top surface of semiconductor device |
FR2737342B1 (fr) * | 1995-07-25 | 1997-08-22 | Thomson Csf | Composant semiconducteur avec dissipateur thermique integre |
US6069370A (en) * | 1997-03-26 | 2000-05-30 | Nec Corporation | Field-effect transistor and fabrication method thereof and image display apparatus |
JP2842426B2 (ja) * | 1997-01-28 | 1999-01-06 | 日本電気株式会社 | アクティブマトリクス型液晶表示装置およびその製造方法 |
US7238557B2 (en) * | 2001-11-14 | 2007-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
TW560001B (en) * | 2002-10-22 | 2003-11-01 | Toppoly Optoelectronics Corp | Method of forming reflective liquid crystal display and driving circuit |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154289A (en) * | 1978-05-26 | 1979-12-05 | Matsushita Electric Ind Co Ltd | Manufacture of thin-film transistor array |
US4413883A (en) * | 1979-05-31 | 1983-11-08 | Northern Telecom Limited | Displays controlled by MIM switches of small capacitance |
JPS56107287A (en) * | 1980-01-31 | 1981-08-26 | Tokyo Shibaura Electric Co | Image display unit |
GB2081018B (en) * | 1980-07-31 | 1985-06-26 | Suwa Seikosha Kk | Active matrix assembly for display device |
US4517733A (en) * | 1981-01-06 | 1985-05-21 | Fuji Xerox Co., Ltd. | Process for fabricating thin film image pick-up element |
FR2505070B1 (fr) * | 1981-01-16 | 1986-04-04 | Suwa Seikosha Kk | Dispositif non lineaire pour un panneau d'affichage a cristaux liquides et procede de fabrication d'un tel panneau d'affichage |
JPH0620122B2 (ja) * | 1982-01-19 | 1994-03-16 | キヤノン株式会社 | 半導体素子 |
US4398340A (en) * | 1982-04-26 | 1983-08-16 | The United States Of America As Represented By The Secretary Of The Army | Method for making thin film field effect transistors |
FR2533072B1 (fr) * | 1982-09-14 | 1986-07-18 | Coissard Pierre | Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs |
JPS59123884A (ja) * | 1982-12-29 | 1984-07-17 | シャープ株式会社 | 液晶表示装置の駆動方法 |
JPS59204274A (ja) * | 1983-05-06 | 1984-11-19 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
US4543320A (en) * | 1983-11-08 | 1985-09-24 | Energy Conversion Devices, Inc. | Method of making a high performance, small area thin film transistor |
US4633284A (en) * | 1983-11-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Thin film transistor having an annealed gate oxide and method of making same |
US4547789A (en) * | 1983-11-08 | 1985-10-15 | Energy Conversion Devices, Inc. | High current thin film transistor |
US4639087A (en) * | 1984-08-08 | 1987-01-27 | Energy Conversion Devices, Inc. | Displays having pixels with two portions and capacitors |
-
1985
- 1985-08-27 FR FR8512804A patent/FR2586859B1/fr not_active Expired
-
1986
- 1986-08-22 DE DE8686401863T patent/DE3672729D1/de not_active Expired - Fee Related
- 1986-08-22 EP EP86401863A patent/EP0216673B1/de not_active Expired - Lifetime
- 1986-08-25 US US06/900,079 patent/US4697331A/en not_active Expired - Fee Related
- 1986-08-27 JP JP61201173A patent/JPS6252970A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2586859B1 (fr) | 1987-11-20 |
EP0216673A1 (de) | 1987-04-01 |
US4697331A (en) | 1987-10-06 |
JPS6252970A (ja) | 1987-03-07 |
EP0216673B1 (de) | 1990-07-18 |
FR2586859A1 (fr) | 1987-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |