DE3613012C2 - - Google Patents

Info

Publication number
DE3613012C2
DE3613012C2 DE3613012A DE3613012A DE3613012C2 DE 3613012 C2 DE3613012 C2 DE 3613012C2 DE 3613012 A DE3613012 A DE 3613012A DE 3613012 A DE3613012 A DE 3613012A DE 3613012 C2 DE3613012 C2 DE 3613012C2
Authority
DE
Germany
Prior art keywords
single crystal
sic
sic single
substrate
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3613012A
Other languages
German (de)
English (en)
Other versions
DE3613012A1 (de
Inventor
Mitsuhiro Tenri Nara Jp Shigeta
Akira Nara Jp Suzuki
Katsuki Sakai Osaka Jp Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3613012A1 publication Critical patent/DE3613012A1/de
Application granted granted Critical
Publication of DE3613012C2 publication Critical patent/DE3613012C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19863613012 1985-04-18 1986-04-17 Verfahren zur herstellung eines sic-einkristall-substrats Granted DE3613012A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60084237A JPS61243000A (ja) 1985-04-18 1985-04-18 炭化珪素単結晶基板の製造方法

Publications (2)

Publication Number Publication Date
DE3613012A1 DE3613012A1 (de) 1986-11-06
DE3613012C2 true DE3613012C2 (ja) 1991-01-10

Family

ID=13824861

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863613012 Granted DE3613012A1 (de) 1985-04-18 1986-04-17 Verfahren zur herstellung eines sic-einkristall-substrats

Country Status (2)

Country Link
JP (1) JPS61243000A (ja)
DE (1) DE3613012A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4208172A1 (de) * 1991-03-15 1992-09-17 Cree Research Inc Hochempfindliche fotodiode zur feststellung von uv-strahlung
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3915053C2 (de) * 1989-05-08 1995-03-30 Siemens Ag Verfahren zum Herstellen von einkristallinem Siliziumkarbid SiC
DE4109005C1 (ja) * 1991-03-19 1992-09-10 Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
CN103628140B (zh) * 2013-10-09 2016-08-17 东莞市天域半导体科技有限公司 一种超高温双层水冷石英管真空室用双密封结构
JP6488607B2 (ja) * 2014-09-22 2019-03-27 株式会社Sumco 単結晶ＳｉＣウェーハの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
JPS5443200A (en) * 1977-09-13 1979-04-05 Sharp Corp Production of silicon carbide substrate
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS60145992A (ja) * 1983-12-29 1985-08-01 Sharp Corp 炭化珪素単結晶基板の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4208172A1 (de) * 1991-03-15 1992-09-17 Cree Research Inc Hochempfindliche fotodiode zur feststellung von uv-strahlung
DE4208172B4 (de) * 1991-03-15 2006-05-11 Cree, Inc. Hochempfindliche Fotodiode zur Feststellung von UV-Strahlung
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung

Also Published As

Publication number Publication date
JPS61243000A (ja) 1986-10-29
DE3613012A1 (de) 1986-11-06

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee