DE3613012A1 - Verfahren zur herstellung eines sic-einkristall-substrats - Google Patents

Verfahren zur herstellung eines sic-einkristall-substrats

Info

Publication number
DE3613012A1
DE3613012A1 DE19863613012 DE3613012A DE3613012A1 DE 3613012 A1 DE3613012 A1 DE 3613012A1 DE 19863613012 DE19863613012 DE 19863613012 DE 3613012 A DE3613012 A DE 3613012A DE 3613012 A1 DE3613012 A1 DE 3613012A1
Authority
DE
Germany
Prior art keywords
single crystal
sic single
substrate
sic
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863613012
Other languages
German (de)
English (en)
Other versions
DE3613012C2 (ja
Inventor
Katsuki Sakai Osaka Furukawa
Mitsuhiro Tenri Nara Shigeta
Akira Nara Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3613012A1 publication Critical patent/DE3613012A1/de
Application granted granted Critical
Publication of DE3613012C2 publication Critical patent/DE3613012C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19863613012 1985-04-18 1986-04-17 Verfahren zur herstellung eines sic-einkristall-substrats Granted DE3613012A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60084237A JPS61243000A (ja) 1985-04-18 1985-04-18 炭化珪素単結晶基板の製造方法

Publications (2)

Publication Number Publication Date
DE3613012A1 true DE3613012A1 (de) 1986-11-06
DE3613012C2 DE3613012C2 (ja) 1991-01-10

Family

ID=13824861

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863613012 Granted DE3613012A1 (de) 1985-04-18 1986-04-17 Verfahren zur herstellung eines sic-einkristall-substrats

Country Status (2)

Country Link
JP (1) JPS61243000A (ja)
DE (1) DE3613012A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3915053A1 (de) * 1989-05-08 1990-11-15 Siemens Ag Verfahren zum herstellen von einkristallinem siliziumkarbid sic
DE4109005C1 (ja) * 1991-03-19 1992-09-10 Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De
DE4234508A1 (de) * 1992-10-13 1994-04-14 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
DE102015115961B4 (de) * 2014-09-22 2021-02-18 Sumco Corporation Verfahren zur Herstellung eines einkristallinen SiC-Wafers

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
CN103628140B (zh) * 2013-10-09 2016-08-17 东莞市天域半导体科技有限公司 一种超高温双层水冷石英管真空室用双密封结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1915549B2 (de) * 1968-03-28 1976-03-04 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zum epitaktischen aufwachsen von siliciumcarbidschichten
DE3415799A1 (de) * 1983-04-28 1984-10-31 Sharp K.K., Osaka Verfahren zur herstellung eines einkristall-substrats aus siliziumcarbid
DE3446956A1 (de) * 1983-12-29 1985-07-11 Sharp K.K., Osaka Verfahren zum herstellen eines einkristall-substrates aus siliciumcarbid

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443200A (en) * 1977-09-13 1979-04-05 Sharp Corp Production of silicon carbide substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1915549B2 (de) * 1968-03-28 1976-03-04 International Business Machines Corp., Armonk, N.Y. (V.St.A.) Verfahren zum epitaktischen aufwachsen von siliciumcarbidschichten
DE3415799A1 (de) * 1983-04-28 1984-10-31 Sharp K.K., Osaka Verfahren zur herstellung eines einkristall-substrats aus siliziumcarbid
DE3446956A1 (de) * 1983-12-29 1985-07-11 Sharp K.K., Osaka Verfahren zum herstellen eines einkristall-substrates aus siliciumcarbid

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NL-Z: J. Crystal Growth, 70, 1984, 287-290 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3915053A1 (de) * 1989-05-08 1990-11-15 Siemens Ag Verfahren zum herstellen von einkristallinem siliziumkarbid sic
DE4109005C1 (ja) * 1991-03-19 1992-09-10 Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De
EP0504712A1 (de) * 1991-03-19 1992-09-23 Cs Halbleiter-Und Solartechnologie Gmbh Verfahren zur Herstellung einer monokristallinen Siliciumcarbid-Schicht
DE4234508A1 (de) * 1992-10-13 1994-04-14 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
US5653798A (en) * 1992-12-07 1997-08-05 Oregon Graduate Institute Of Science And Technology Method of making substrates for the growth of 3C-silicon carbide
DE102015115961B4 (de) * 2014-09-22 2021-02-18 Sumco Corporation Verfahren zur Herstellung eines einkristallinen SiC-Wafers

Also Published As

Publication number Publication date
DE3613012C2 (ja) 1991-01-10
JPS61243000A (ja) 1986-10-29

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee