DE4109005C1 - - Google Patents

Info

Publication number
DE4109005C1
DE4109005C1 DE4109005A DE4109005A DE4109005C1 DE 4109005 C1 DE4109005 C1 DE 4109005C1 DE 4109005 A DE4109005 A DE 4109005A DE 4109005 A DE4109005 A DE 4109005A DE 4109005 C1 DE4109005 C1 DE 4109005C1
Authority
DE
Germany
Prior art keywords
layer
sic
silicon carbide
monocrystalline
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4109005A
Other languages
German (de)
English (en)
Inventor
Christoph Dipl.-Chem. Dr. 8162 Schliersee De Scholz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cs Halbleiter- und Solartechnologie 8000 Muenchen De GmbH
Original Assignee
Cs Halbleiter- und Solartechnologie 8000 Muenchen De GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cs Halbleiter- und Solartechnologie 8000 Muenchen De GmbH filed Critical Cs Halbleiter- und Solartechnologie 8000 Muenchen De GmbH
Priority to DE4109005A priority Critical patent/DE4109005C1/de
Priority to JP4081651A priority patent/JPH0624900A/ja
Priority to DE59203001T priority patent/DE59203001D1/de
Priority to EP92104092A priority patent/EP0504712B1/de
Application granted granted Critical
Publication of DE4109005C1 publication Critical patent/DE4109005C1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE4109005A 1991-03-19 1991-03-19 Expired - Fee Related DE4109005C1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE4109005A DE4109005C1 (ja) 1991-03-19 1991-03-19
JP4081651A JPH0624900A (ja) 1991-03-19 1992-03-02 単結晶炭化ケイ素層の製造方法
DE59203001T DE59203001D1 (de) 1991-03-19 1992-03-10 Verfahren zur Herstellung einer monokristallinen Siliciumcarbid-Schicht.
EP92104092A EP0504712B1 (de) 1991-03-19 1992-03-10 Verfahren zur Herstellung einer monokristallinen Siliciumcarbid-Schicht

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4109005A DE4109005C1 (ja) 1991-03-19 1991-03-19

Publications (1)

Publication Number Publication Date
DE4109005C1 true DE4109005C1 (ja) 1992-09-10

Family

ID=6427699

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4109005A Expired - Fee Related DE4109005C1 (ja) 1991-03-19 1991-03-19
DE59203001T Expired - Fee Related DE59203001D1 (de) 1991-03-19 1992-03-10 Verfahren zur Herstellung einer monokristallinen Siliciumcarbid-Schicht.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59203001T Expired - Fee Related DE59203001D1 (de) 1991-03-19 1992-03-10 Verfahren zur Herstellung einer monokristallinen Siliciumcarbid-Schicht.

Country Status (3)

Country Link
EP (1) EP0504712B1 (ja)
JP (1) JPH0624900A (ja)
DE (2) DE4109005C1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4234508A1 (de) * 1992-10-13 1994-04-14 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
DE102015115961B4 (de) * 2014-09-22 2021-02-18 Sumco Corporation Verfahren zur Herstellung eines einkristallinen SiC-Wafers

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130439A (ja) * 1994-11-01 1996-05-21 Agency Of Ind Science & Technol 高速表面弾性波素子
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
JP5761264B2 (ja) * 2013-07-24 2015-08-12 トヨタ自動車株式会社 ＳｉＣ基板の製造方法
JP6582779B2 (ja) * 2015-09-15 2019-10-02 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
SE2150284A1 (en) * 2021-03-11 2022-07-19 Kiselkarbid I Stockholm Ab System and method of producing monocrystalline layers on a substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446956A1 (de) * 1983-12-29 1985-07-11 Sharp K.K., Osaka Verfahren zum herstellen eines einkristall-substrates aus siliciumcarbid
DE3613012A1 (de) * 1985-04-18 1986-11-06 Sharp K.K., Osaka Verfahren zur herstellung eines sic-einkristall-substrats

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446956A1 (de) * 1983-12-29 1985-07-11 Sharp K.K., Osaka Verfahren zum herstellen eines einkristall-substrates aus siliciumcarbid
DE3613012A1 (de) * 1985-04-18 1986-11-06 Sharp K.K., Osaka Verfahren zur herstellung eines sic-einkristall-substrats

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4234508A1 (de) * 1992-10-13 1994-04-14 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
DE102015115961B4 (de) * 2014-09-22 2021-02-18 Sumco Corporation Verfahren zur Herstellung eines einkristallinen SiC-Wafers

Also Published As

Publication number Publication date
EP0504712A1 (de) 1992-09-23
JPH0624900A (ja) 1994-02-01
DE59203001D1 (de) 1995-08-31
EP0504712B1 (de) 1995-07-26

Similar Documents

Publication Publication Date Title
DE4234508C2 (de) Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
DE69305238T2 (de) Verfahren zur Herstellung von grossen Monokristallen
DE3788745T2 (de) Verfahren zur Herstellung eines Kristalls und Kristallkörper, die nach diesem Verfahren hergestellt werden.
DE3856475T2 (de) Monokristallines Dünnschichtsubstrat
DE3415799C2 (ja)
EP0475378B1 (de) Verfahren zur Herstellung von Substraten für elektronische, elektrooptische und optische Bauelemente
DE69916177T2 (de) Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls
Atzmon et al. Chemical vapor deposition of heteroepitaxial Si1− x− yGexCy films on (100) Si substrates
DE69822256T2 (de) Herstellung des Siliziumkarbids
DE4109005C1 (ja)
DE1769298C3 (de) Verfahren zum epitaktischen Aufwachsen von Silicium oder Germanium auf einer Unterlage aus einkristallinem Saphir
DE202015009519U1 (de) Siliziumkarbid-Substrat
EP0845055B1 (de) KEIMKRISTALL ZUM HERSTELLEN VON EINKRISTALLEN, VERWENDUNG DES KEIMKRISTALLS UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN ODER EINKRISTALLINEN SiC-SCHICHTEN
DE3751884T2 (de) Herstellungsverfahren einer niedergeschlagenen Kristallschicht
EP1805354B1 (de) Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen
DE60303014T2 (de) Zwischenprodukt für die Herstellung von optischen, elektronischen oder optoelektronischen Komponenten
US5281299A (en) Method for manufacturing a crystal with a lattice parameter gradient
DE3853387T2 (de) Verfahren zum Züchten eines Kristalls.
JP3657036B2 (ja) 炭化ケイ素薄膜および炭化ケイ素薄膜積層基板の製造方法
DE3787038T2 (de) Verfahren zur Ausbildung eines abgeschiedenen Films.
DE3002671C2 (de) Verfahren zur Herstellung eines Siliciumcarbidsubstrats
DE60036761T2 (de) Einkristalliner SiC-Verbundwerkstoff für Halbleitereinrichtungen und Verfahren zu seiner Herstellung
DE19848298B4 (de) Hochtemperaturstabile Halbleitersubstratscheibe großen Durchmessers und Verfahren zu ihrer Herstellung
DE10344986B4 (de) Verfahren zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten
DE10136605B4 (de) Verfahren zum Wachsen von Galliumnitrid-Halbleitermaterial

Legal Events

Date Code Title Description
8100 Publication of the examined application without publication of unexamined application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee