DE3586718D1 - Festwertspeicher mit interdigitalen bitzeilen. - Google Patents

Festwertspeicher mit interdigitalen bitzeilen.

Info

Publication number
DE3586718D1
DE3586718D1 DE8585402568T DE3586718T DE3586718D1 DE 3586718 D1 DE3586718 D1 DE 3586718D1 DE 8585402568 T DE8585402568 T DE 8585402568T DE 3586718 T DE3586718 T DE 3586718T DE 3586718 D1 DE3586718 D1 DE 3586718D1
Authority
DE
Germany
Prior art keywords
interdigital
bit lines
fixed value
value storage
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585402568T
Other languages
English (en)
Other versions
DE3586718T2 (de
Inventor
Harold L Davis
Robert J Proebsting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE3586718D1 publication Critical patent/DE3586718D1/de
Publication of DE3586718T2 publication Critical patent/DE3586718T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126Virtual ground arrays
DE8585402568T 1984-12-26 1985-12-20 Festwertspeicher mit interdigitalen bitzeilen. Expired - Fee Related DE3586718T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68633284A 1984-12-26 1984-12-26

Publications (2)

Publication Number Publication Date
DE3586718D1 true DE3586718D1 (de) 1992-11-05
DE3586718T2 DE3586718T2 (de) 1993-03-11

Family

ID=24755875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585402568T Expired - Fee Related DE3586718T2 (de) 1984-12-26 1985-12-20 Festwertspeicher mit interdigitalen bitzeilen.

Country Status (5)

Country Link
US (1) US4758989A (de)
EP (1) EP0189699B1 (de)
JP (1) JP3009667B2 (de)
KR (1) KR950001835B1 (de)
DE (1) DE3586718T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171199A (ja) * 1987-12-25 1989-07-06 Mitsubishi Electric Corp 半導体メモリ
JPH04206965A (ja) * 1990-11-30 1992-07-28 Sony Corp 不揮発性半導体メモリ
US5392288A (en) * 1991-02-08 1995-02-21 Quantum Corporation Addressing technique for a fault tolerant block-structured storage device
US5377153A (en) * 1992-11-30 1994-12-27 Sgs-Thomson Microelectronics, Inc. Virtual ground read only memory circuit
TW312763B (de) * 1995-04-05 1997-08-11 Siemens Ag
JP4167458B2 (ja) * 2002-07-24 2008-10-15 松下電器産業株式会社 半導体メモリ装置及び半導体集積回路
US7864593B2 (en) * 2007-04-12 2011-01-04 Qimonda Ag Method for classifying memory cells in an integrated circuit
US20120079349A1 (en) * 2010-09-24 2012-03-29 Arkady Bramnik Method and apparatus for multi-bit upset protection
CN112397133B (zh) * 2020-12-11 2023-05-30 西安紫光国芯半导体有限公司 存储器、阵列单元模块及其存储方法、构建方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368039A (en) * 1976-11-30 1978-06-17 Toshiba Corp Error correction system for semiconductor memory unit
JPS5819144B2 (ja) * 1977-12-02 1983-04-16 株式会社東芝 読み出し専用記憶装置
US4207616A (en) * 1978-11-29 1980-06-10 Teletype Corporation Logic array having improved speed characteristics
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit
JPS57208691A (en) * 1981-06-15 1982-12-21 Mitsubishi Electric Corp Semiconductor memory
JPS589519B2 (ja) * 1981-07-31 1983-02-21 沖電気工業株式会社 半導体メモリ回路
JPS5873095A (ja) * 1981-10-23 1983-05-02 Toshiba Corp ダイナミツク型メモリ装置
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows

Also Published As

Publication number Publication date
DE3586718T2 (de) 1993-03-11
EP0189699A2 (de) 1986-08-06
EP0189699B1 (de) 1992-09-30
JP3009667B2 (ja) 2000-02-14
JPS61222097A (ja) 1986-10-02
EP0189699A3 (en) 1989-02-22
KR860005377A (ko) 1986-07-21
US4758989A (en) 1988-07-19
KR950001835B1 (ko) 1995-03-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SGS-THOMSON MICROELECTRONICS INC. (N.D.GES.DES STA

8339 Ceased/non-payment of the annual fee