KR860005377A - 인터디지테이션된 비트 라인 롬 - Google Patents

인터디지테이션된 비트 라인 롬

Info

Publication number
KR860005377A
KR860005377A KR1019850009826A KR850009826A KR860005377A KR 860005377 A KR860005377 A KR 860005377A KR 1019850009826 A KR1019850009826 A KR 1019850009826A KR 850009826 A KR850009826 A KR 850009826A KR 860005377 A KR860005377 A KR 860005377A
Authority
KR
South Korea
Prior art keywords
interdigitated
bit line
line rom
rom
bit
Prior art date
Application number
KR1019850009826A
Other languages
English (en)
Other versions
KR950001835B1 (ko
Inventor
엘. 데이비스 해롤드
제이. 프로엘스팅 로버트
Original Assignee
에스지에스-톰슨 마이크로일렉트로닉스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스지에스-톰슨 마이크로일렉트로닉스 인코포레이티드 filed Critical 에스지에스-톰슨 마이크로일렉트로닉스 인코포레이티드
Publication of KR860005377A publication Critical patent/KR860005377A/ko
Application granted granted Critical
Publication of KR950001835B1 publication Critical patent/KR950001835B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126—Virtual ground arrays
KR1019850009826A 1984-12-26 1985-12-24 인터디지테이션된 비트 라인 롬 KR950001835B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68633284A 1984-12-26 1984-12-26
US686,332 1984-12-26

Publications (2)

Publication Number Publication Date
KR860005377A true KR860005377A (ko) 1986-07-21
KR950001835B1 KR950001835B1 (ko) 1995-03-03

Family

ID=24755875

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850009826A KR950001835B1 (ko) 1984-12-26 1985-12-24 인터디지테이션된 비트 라인 롬

Country Status (5)

Country Link
US (1) US4758989A (ko)
EP (1) EP0189699B1 (ko)
JP (1) JP3009667B2 (ko)
KR (1) KR950001835B1 (ko)
DE (1) DE3586718T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397133A (zh) * 2020-12-11 2021-02-23 西安紫光国芯半导体有限公司 存储器、阵列单元模块及其存储方法、构建方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171199A (ja) * 1987-12-25 1989-07-06 Mitsubishi Electric Corp 半導体メモリ
JPH04206965A (ja) * 1990-11-30 1992-07-28 Sony Corp 不揮発性半導体メモリ
US5392288A (en) * 1991-02-08 1995-02-21 Quantum Corporation Addressing technique for a fault tolerant block-structured storage device
US5377153A (en) * 1992-11-30 1994-12-27 Sgs-Thomson Microelectronics, Inc. Virtual ground read only memory circuit
TW312763B (ko) * 1995-04-05 1997-08-11 Siemens Ag
JP4167458B2 (ja) * 2002-07-24 2008-10-15 松下電器産業株式会社 半導体メモリ装置及び半導体集積回路
US7864593B2 (en) * 2007-04-12 2011-01-04 Qimonda Ag Method for classifying memory cells in an integrated circuit
US20120079349A1 (en) * 2010-09-24 2012-03-29 Arkady Bramnik Method and apparatus for multi-bit upset protection

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368039A (en) * 1976-11-30 1978-06-17 Toshiba Corp Error correction system for semiconductor memory unit
JPS5819144B2 (ja) * 1977-12-02 1983-04-16 株式会社東芝 読み出し専用記憶装置
US4207616A (en) * 1978-11-29 1980-06-10 Teletype Corporation Logic array having improved speed characteristics
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit
JPS57208691A (en) * 1981-06-15 1982-12-21 Mitsubishi Electric Corp Semiconductor memory
JPS589519B2 (ja) * 1981-07-31 1983-02-21 沖電気工業株式会社 半導体メモリ回路
JPS5873095A (ja) * 1981-10-23 1983-05-02 Toshiba Corp ダイナミツク型メモリ装置
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397133A (zh) * 2020-12-11 2021-02-23 西安紫光国芯半导体有限公司 存储器、阵列单元模块及其存储方法、构建方法
CN112397133B (zh) * 2020-12-11 2023-05-30 西安紫光国芯半导体有限公司 存储器、阵列单元模块及其存储方法、构建方法

Also Published As

Publication number Publication date
DE3586718T2 (de) 1993-03-11
EP0189699A3 (en) 1989-02-22
EP0189699A2 (en) 1986-08-06
US4758989A (en) 1988-07-19
EP0189699B1 (en) 1992-09-30
KR950001835B1 (ko) 1995-03-03
DE3586718D1 (de) 1992-11-05
JPS61222097A (ja) 1986-10-02
JP3009667B2 (ja) 2000-02-14

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