DE3585286D1 - Herstellungsverfahren fuer halbleiteranordnungen. - Google Patents

Herstellungsverfahren fuer halbleiteranordnungen.

Info

Publication number
DE3585286D1
DE3585286D1 DE8585903045T DE3585286T DE3585286D1 DE 3585286 D1 DE3585286 D1 DE 3585286D1 DE 8585903045 T DE8585903045 T DE 8585903045T DE 3585286 T DE3585286 T DE 3585286T DE 3585286 D1 DE3585286 D1 DE 3585286D1
Authority
DE
Germany
Prior art keywords
film
manufacturing
sio2 film
impurity ions
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585903045T
Other languages
English (en)
Inventor
Yoshio Ueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority claimed from PCT/JP1985/000339 external-priority patent/WO1986007652A1/ja
Application granted granted Critical
Publication of DE3585286D1 publication Critical patent/DE3585286D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
DE8585903045T 1985-06-17 1985-06-17 Herstellungsverfahren fuer halbleiteranordnungen. Expired - Lifetime DE3585286D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1985/000339 WO1986007652A1 (en) 1984-01-25 1985-06-17 Process for manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
DE3585286D1 true DE3585286D1 (de) 1992-03-05

Family

ID=13846494

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585903045T Expired - Lifetime DE3585286D1 (de) 1985-06-17 1985-06-17 Herstellungsverfahren fuer halbleiteranordnungen.

Country Status (3)

Country Link
US (1) US4771009A (de)
EP (1) EP0229180B1 (de)
DE (1) DE3585286D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789308A (en) * 1995-06-06 1998-08-04 Advanced Micro Devices, Inc. Manufacturing method for wafer slice starting material to optimize extrinsic gettering during semiconductor fabrication
US6121158A (en) * 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2008319A1 (de) * 1970-02-23 1971-09-09 Siemens Ag Verfahren zum Herstellen eines pnp Silicium Transistors
US3759762A (en) * 1970-10-19 1973-09-18 Motorola Inc Method of forming integrated circuits utilizing low resistance valueslow temperature deposited oxides and shallow junctions
US3806371A (en) * 1971-07-28 1974-04-23 Motorola Inc Method of making complementary monolithic insulated gate field effect transistors having low threshold voltage and low leakage current
FR2191272A1 (de) * 1972-06-27 1974-02-01 Ibm France
JPS5467778A (en) * 1977-11-10 1979-05-31 Toshiba Corp Production of semiconductor device
US4393575A (en) * 1979-03-09 1983-07-19 National Semiconductor Corporation Process for manufacturing a JFET with an ion implanted stabilization layer
DE3037316C2 (de) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung von Leistungsthyristoren
JPS56133839A (en) * 1980-03-24 1981-10-20 Sony Corp Process for semiconductor substrate
US4567645A (en) * 1983-09-16 1986-02-04 International Business Machines Corporation Method for forming a buried subcollector in a semiconductor substrate by ion implantation
JPS60154670A (ja) * 1984-01-25 1985-08-14 Sony Corp 半導体装置の製造方法
US4589928A (en) * 1984-08-21 1986-05-20 At&T Bell Laboratories Method of making semiconductor integrated circuits having backside gettered with phosphorus

Also Published As

Publication number Publication date
EP0229180A1 (de) 1987-07-22
EP0229180A4 (de) 1989-04-26
EP0229180B1 (de) 1992-01-22
US4771009A (en) 1988-09-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee