JPS5656642A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5656642A
JPS5656642A JP13332979A JP13332979A JPS5656642A JP S5656642 A JPS5656642 A JP S5656642A JP 13332979 A JP13332979 A JP 13332979A JP 13332979 A JP13332979 A JP 13332979A JP S5656642 A JPS5656642 A JP S5656642A
Authority
JP
Japan
Prior art keywords
layer
groove
junction
junctions
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13332979A
Other languages
Japanese (ja)
Inventor
Mitsuyoshi Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13332979A priority Critical patent/JPS5656642A/en
Publication of JPS5656642A publication Critical patent/JPS5656642A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve effect of a protecting film by arranging one of P-N junctions exposed in a groove on a semiconductor substrate surface in a different-in-level structure getting deep toward the groove. CONSTITUTION:A P type impurity is diffused to an N type Si substrate 1 to form PE layer 2 and PB layer 3, an etching groove 21 is provided on the layer 3, and NE layer 4 is formed through selective diffusion including the groove 21. Then, after grooves 5, 6 reaching junctions 8, 9 are formed, a glass 7 is buried therein. A thermally oxidized film 12 is provided on the junction 8 exposed to the surface, and an electrode is attached to a necessary part to completion. According to this constitution, since PB-NE junction is not present near the main surface, PB-NB, NB-PE junctions and also PBNE junction are protected thoroughly by the glass despite the glass being missing near the surface, and thus a reliability of the device can be improved.
JP13332979A 1979-10-15 1979-10-15 Semiconductor device Pending JPS5656642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13332979A JPS5656642A (en) 1979-10-15 1979-10-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13332979A JPS5656642A (en) 1979-10-15 1979-10-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5656642A true JPS5656642A (en) 1981-05-18

Family

ID=15102160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13332979A Pending JPS5656642A (en) 1979-10-15 1979-10-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5656642A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135282A (en) * 1974-09-20 1976-03-25 Fuji Electric Co Ltd HANDOTAISOSHI
JPS5138984A (en) * 1974-09-30 1976-03-31 Hitachi Ltd HANDOTAISOSHINOSEIZOHOHO
JPS52120773A (en) * 1976-04-05 1977-10-11 Nec Corp Semiconductor element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135282A (en) * 1974-09-20 1976-03-25 Fuji Electric Co Ltd HANDOTAISOSHI
JPS5138984A (en) * 1974-09-30 1976-03-31 Hitachi Ltd HANDOTAISOSHINOSEIZOHOHO
JPS52120773A (en) * 1976-04-05 1977-10-11 Nec Corp Semiconductor element

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