DE3581914D1 - Halbleiterspeichermatrix mit mehreren verbundenen treibertransistoren. - Google Patents
Halbleiterspeichermatrix mit mehreren verbundenen treibertransistoren.Info
- Publication number
- DE3581914D1 DE3581914D1 DE8585116456T DE3581914T DE3581914D1 DE 3581914 D1 DE3581914 D1 DE 3581914D1 DE 8585116456 T DE8585116456 T DE 8585116456T DE 3581914 T DE3581914 T DE 3581914T DE 3581914 D1 DE3581914 D1 DE 3581914D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- memory matrix
- driver transistors
- several connected
- connected driver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59276181A JPS61156862A (ja) | 1984-12-28 | 1984-12-28 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581914D1 true DE3581914D1 (de) | 1991-04-04 |
Family
ID=17565841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585116456T Expired - Lifetime DE3581914D1 (de) | 1984-12-28 | 1985-12-23 | Halbleiterspeichermatrix mit mehreren verbundenen treibertransistoren. |
Country Status (5)
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264719A (en) * | 1986-01-07 | 1993-11-23 | Harris Corporation | High voltage lateral semiconductor device |
JPS63136557A (ja) * | 1986-11-27 | 1988-06-08 | Matsushita Electronics Corp | 記憶装置 |
US5061654A (en) * | 1987-07-01 | 1991-10-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit having oxide regions with different thickness |
JP2810042B2 (ja) * | 1987-09-16 | 1998-10-15 | 株式会社日立製作所 | 半導体集積回路装置 |
KR100212098B1 (ko) | 1987-09-19 | 1999-08-02 | 가나이 쓰도무 | 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법 |
US5734188A (en) * | 1987-09-19 | 1998-03-31 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
JPH01129440A (ja) * | 1987-11-14 | 1989-05-22 | Fujitsu Ltd | 半導体装置 |
JP2803729B2 (ja) * | 1987-11-16 | 1998-09-24 | 株式会社 日立製作所 | 半導体集積回路装置の製造方法 |
US5917211A (en) * | 1988-09-19 | 1999-06-29 | Hitachi, Ltd. | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
JPH02122563A (ja) * | 1988-10-31 | 1990-05-10 | Nec Corp | 半導体装置の製造方法 |
JPH02144963A (ja) * | 1988-11-28 | 1990-06-04 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
JPH02163962A (ja) * | 1988-12-17 | 1990-06-25 | Nec Corp | Mos型メモリ集積回路装置 |
JP2770416B2 (ja) * | 1989-05-22 | 1998-07-02 | 日本電気株式会社 | 半導体記憶装置 |
JP2673385B2 (ja) * | 1989-10-26 | 1997-11-05 | 三菱電機株式会社 | 半導体装置 |
DE4034169C2 (de) * | 1989-10-26 | 1994-05-19 | Mitsubishi Electric Corp | DRAM mit einem Speicherzellenfeld und Herstellungsverfahren dafür |
US5234853A (en) * | 1990-03-05 | 1993-08-10 | Fujitsu Limited | Method of producing a high voltage MOS transistor |
US5276344A (en) * | 1990-04-27 | 1994-01-04 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
KR930009127B1 (ko) * | 1991-02-25 | 1993-09-23 | 삼성전자 주식회사 | 스택형캐패시터를구비하는반도체메모리장치 |
KR940000510B1 (ko) * | 1991-03-20 | 1994-01-21 | 삼성전자 주식회사 | 반도체 메모리장치 및 그 제조방법 |
US5324680A (en) * | 1991-05-22 | 1994-06-28 | Samsung Electronics, Co. Ltd. | Semiconductor memory device and the fabrication method thereof |
US5395784A (en) * | 1993-04-14 | 1995-03-07 | Industrial Technology Research Institute | Method of manufacturing low leakage and long retention time DRAM |
US5545926A (en) * | 1993-10-12 | 1996-08-13 | Kabushiki Kaisha Toshiba | Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts |
KR100219533B1 (ko) * | 1997-01-31 | 1999-09-01 | 윤종용 | 임베디드 메모리소자 및 그 제조방법 |
US6174756B1 (en) * | 1997-09-30 | 2001-01-16 | Siemens Aktiengesellschaft | Spacers to block deep junction implants and silicide formation in integrated circuits |
US5986314A (en) * | 1997-10-08 | 1999-11-16 | Texas Instruments Incorporated | Depletion mode MOS capacitor with patterned Vt implants |
US6066525A (en) * | 1998-04-07 | 2000-05-23 | Lsi Logic Corporation | Method of forming DRAM capacitor by forming separate dielectric layers in a CMOS process |
US20030158786A1 (en) * | 1999-02-26 | 2003-08-21 | Skyline Software Systems, Inc. | Sending three-dimensional images over a network |
JP2002280459A (ja) * | 2001-03-21 | 2002-09-27 | Kawasaki Microelectronics Kk | 集積回路の製造方法 |
KR100428788B1 (ko) * | 2001-12-03 | 2004-04-28 | 삼성전자주식회사 | 반도체 장치의 커패시터 구조체 및 그 형성 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4413401A (en) * | 1979-07-23 | 1983-11-08 | National Semiconductor Corporation | Method for making a semiconductor capacitor |
JPS5826829B2 (ja) * | 1979-08-30 | 1983-06-06 | 富士通株式会社 | ダイナミックメモリセルの製造方法 |
JPS56164570A (en) * | 1980-05-21 | 1981-12-17 | Fujitsu Ltd | Semiconductor memory unit |
US4364075A (en) * | 1980-09-02 | 1982-12-14 | Intel Corporation | CMOS Dynamic RAM cell and method of fabrication |
US4409259A (en) * | 1980-09-02 | 1983-10-11 | Intel Corporation | MOS Dynamic RAM cell and method of fabrication |
US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
JPS59113659A (ja) * | 1982-12-20 | 1984-06-30 | Toshiba Corp | Mosダイナミツクメモリ |
US4536944A (en) * | 1982-12-29 | 1985-08-27 | International Business Machines Corporation | Method of making ROM/PLA semiconductor device by late stage personalization |
JPS59172265A (ja) * | 1983-03-22 | 1984-09-28 | Hitachi Ltd | 半導体装置とその製造方法 |
JPS59211277A (ja) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | 半導体装置 |
US4466177A (en) * | 1983-06-30 | 1984-08-21 | International Business Machines Corporation | Storage capacitor optimization for one device FET dynamic RAM cell |
-
1984
- 1984-12-28 JP JP59276181A patent/JPS61156862A/ja active Granted
-
1985
- 1985-08-30 KR KR1019850006337A patent/KR900008207B1/ko not_active Expired
- 1985-12-23 EP EP85116456A patent/EP0186889B1/en not_active Expired - Lifetime
- 1985-12-23 DE DE8585116456T patent/DE3581914D1/de not_active Expired - Lifetime
-
1987
- 1987-12-02 US US07/335,721 patent/US4994889A/en not_active Expired - Lifetime
-
1990
- 1990-11-21 US US07/616,387 patent/US5071784A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS61156862A (ja) | 1986-07-16 |
EP0186889B1 (en) | 1991-02-27 |
US4994889A (en) | 1991-02-19 |
KR900008207B1 (ko) | 1990-11-05 |
US5071784A (en) | 1991-12-10 |
KR860005441A (ko) | 1986-07-23 |
EP0186889A2 (en) | 1986-07-09 |
JPH0433142B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-06-02 |
EP0186889A3 (en) | 1987-01-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |