DE3574509D1 - Positivfotolackentwickler und verfahren zur entwicklung eines positivfotolacks. - Google Patents
Positivfotolackentwickler und verfahren zur entwicklung eines positivfotolacks.Info
- Publication number
- DE3574509D1 DE3574509D1 DE8585116494T DE3574509T DE3574509D1 DE 3574509 D1 DE3574509 D1 DE 3574509D1 DE 8585116494 T DE8585116494 T DE 8585116494T DE 3574509 T DE3574509 T DE 3574509T DE 3574509 D1 DE3574509 D1 DE 3574509D1
- Authority
- DE
- Germany
- Prior art keywords
- positive
- photocolor
- developer
- developing
- photo paint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59278443A JPH063549B2 (ja) | 1984-12-25 | 1984-12-25 | ポジ型フォトレジスト現像液組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3574509D1 true DE3574509D1 (de) | 1990-01-04 |
Family
ID=17597409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585116494T Expired - Lifetime DE3574509D1 (de) | 1984-12-25 | 1985-12-23 | Positivfotolackentwickler und verfahren zur entwicklung eines positivfotolacks. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4914006A (de) |
EP (1) | EP0186184B1 (de) |
JP (1) | JPH063549B2 (de) |
DE (1) | DE3574509D1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2543348B2 (ja) * | 1986-07-30 | 1996-10-16 | 住友化学工業株式会社 | ポジ形レジスト用現像液 |
DE3638629A1 (de) * | 1986-11-11 | 1988-05-26 | Schering Ag | Mittel und verfahren zur entfernung von fotoresisten |
DE3884825D1 (de) * | 1987-02-16 | 1993-11-18 | Konishiroku Photo Ind | Entwickler für lichtempfindliche lithographische Druckplatte, gemeinschaftlich verarbeitungsfähig für den Negativ-Typ und den Positiv-Typ und Entwicklerzusammensetzung für lichtempfindliches Material. |
JPS6472155A (en) * | 1987-09-12 | 1989-03-17 | Tama Kagaku Kogyo Kk | Developing solution for positive type photoresist |
JPH01129250A (ja) * | 1987-11-16 | 1989-05-22 | Tama Kagaku Kogyo Kk | ポジ型フォトレジスト用現像液 |
JPH01177538A (ja) * | 1988-01-07 | 1989-07-13 | Toyobo Co Ltd | 水溶性感光性樹脂版の現像方法 |
US4997748A (en) * | 1988-08-26 | 1991-03-05 | Tokyo Ohka Kogyo Co., Ltd. | Developer solution for positive-working resist composition |
US5902718A (en) * | 1990-04-27 | 1999-05-11 | Mitsubishi Denki Kabushiki Kaisha | Methods and developer for developing a positive photoresist |
JP2670711B2 (ja) * | 1990-05-29 | 1997-10-29 | 富士写真フイルム株式会社 | ネガ型感光性樹脂組成物用現像液 |
US5164286A (en) * | 1991-02-01 | 1992-11-17 | Ocg Microelectronic Materials, Inc. | Photoresist developer containing fluorinated amphoteric surfactant |
DE69215383T2 (de) * | 1991-12-18 | 1997-04-30 | Hoechst Celanese Corp | Reduktion des metallionengehaltes in novolakharzen |
US5580949A (en) * | 1991-12-18 | 1996-12-03 | Hoechst Celanese Corporation | Metal ion reduction in novolak resins and photoresists |
US5259888A (en) * | 1992-02-03 | 1993-11-09 | Sachem, Inc. | Process for cleaning quartz and silicon surfaces |
US6107007A (en) * | 1992-02-10 | 2000-08-22 | Canon Kabushiki Kaisha | Lithography process |
JP3184530B2 (ja) * | 1992-03-06 | 2001-07-09 | クラリアント・ファイナンス・(ビーブイアイ)・リミテッド | 金属イオンレベルが低いフォトレジスト |
US5543268A (en) * | 1992-05-14 | 1996-08-06 | Tokyo Ohka Kogyo Co., Ltd. | Developer solution for actinic ray-sensitive resist |
SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
US5830990A (en) * | 1992-07-10 | 1998-11-03 | Clariant Finance (Bvi) Limited | Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists |
JP3104939B2 (ja) * | 1992-10-01 | 2000-10-30 | 東京応化工業株式会社 | 半導体デバイス製造用レジスト現像液組成物 |
EP0671025B1 (de) * | 1992-11-25 | 1997-08-13 | Hoechst Celanese Corporation | Metallionenreduzierung in antireflexunterschichten für photoresist |
US5476750A (en) * | 1992-12-29 | 1995-12-19 | Hoechst Celanese Corporation | Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists |
US5286606A (en) * | 1992-12-29 | 1994-02-15 | Hoechst Celanese Corporation | Process for producing a developer having a low metal ion level |
DE4411224A1 (de) * | 1993-11-02 | 1995-05-04 | Du Pont Deutschland | Ein- und mehrfarbige Farbprüfbilder mit niedrigem optischen Punktzuwachs sowie Verfahren und Mittel für deren Herstellung |
JPH08110635A (ja) * | 1994-10-07 | 1996-04-30 | Shin Etsu Chem Co Ltd | 化学増幅ポジ型レジスト材料 |
US5521052A (en) * | 1994-12-30 | 1996-05-28 | Hoechst Celanese Corporation | Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom |
US5837417A (en) * | 1994-12-30 | 1998-11-17 | Clariant Finance (Bvi) Limited | Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition |
US5614352A (en) * | 1994-12-30 | 1997-03-25 | Hoechst Celanese Corporation | Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin |
US5750031A (en) * | 1995-09-26 | 1998-05-12 | Clariant Finance (Bvi) Limited | Process for producing surfactant having a low metal ion level and developer produced therefrom |
US5656413A (en) * | 1995-09-28 | 1997-08-12 | Hoechst Celanese Corporation | Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom |
US5962183A (en) * | 1995-11-27 | 1999-10-05 | Clariant Finance (Bvi) Limited | Metal ion reduction in photoresist compositions by chelating ion exchange resin |
US5665517A (en) * | 1996-01-11 | 1997-09-09 | Hoechst Celanese Corporation | Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom |
JP3707856B2 (ja) * | 1996-03-07 | 2005-10-19 | 富士通株式会社 | レジストパターンの形成方法 |
US5936071A (en) * | 1998-02-02 | 1999-08-10 | Clariant Finance (Bvi) Limited | Process for making a photoactive compound and photoresist therefrom |
US6063550A (en) * | 1998-04-29 | 2000-05-16 | Morton International, Inc. | Aqueous developing solutions for reduced developer residue |
JP3968177B2 (ja) | 1998-09-29 | 2007-08-29 | Azエレクトロニックマテリアルズ株式会社 | 微細レジストパターン形成方法 |
US6372414B1 (en) | 1999-03-12 | 2002-04-16 | Clariant Finance (Bvi) Limited | Lift-off process for patterning fine metal lines |
US20040029395A1 (en) * | 2002-08-12 | 2004-02-12 | Peng Zhang | Process solutions containing acetylenic diol surfactants |
US6599683B1 (en) | 2002-02-13 | 2003-07-29 | Micron Technology, Inc. | Photoresist developer with reduced resist toppling and method of using same |
DE10307523B4 (de) * | 2003-02-21 | 2005-11-17 | Infineon Technologies Ag | Verfahren zur Herstellung einer Resistmaske für die Strukturierung von Halbleitersubstraten |
CN101531600B (zh) * | 2009-04-15 | 2013-05-01 | 绵阳艾萨斯电子材料有限公司 | 季铵碱及其制备方法与应用 |
WO2012127342A1 (en) * | 2011-03-18 | 2012-09-27 | Basf Se | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
JP5512730B2 (ja) * | 2012-03-30 | 2014-06-04 | 富士フイルム株式会社 | 平版印刷版の作製方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3886100A (en) * | 1971-03-25 | 1975-05-27 | Kanegafuchi Chemical Ind | Method of manufacturing polymer particles having uniform cross-linking and expanded shaped articles obtained therefrom |
BE793490A (fr) * | 1972-05-23 | 1973-06-29 | Hunt Chem Corp Philip A | Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane |
US4147545A (en) * | 1972-11-02 | 1979-04-03 | Polychrome Corporation | Photolithographic developing composition with organic lithium compound |
JPS5318994B2 (de) * | 1973-03-13 | 1978-06-17 | ||
JPS50158280A (de) * | 1974-06-10 | 1975-12-22 | ||
GB1573206A (en) * | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
JPS52108434A (en) * | 1976-03-08 | 1977-09-10 | Rohm & Haas | Aqueous coating composite |
JPS5914740B2 (ja) * | 1976-07-02 | 1984-04-05 | コニカ株式会社 | 拡散転写用写真材料 |
JPS5371111A (en) * | 1976-12-06 | 1978-06-24 | Kao Corp | Detergent composition |
JPS608494B2 (ja) * | 1978-03-01 | 1985-03-04 | 富士通株式会社 | ポジ型レジスト像の形成法 |
GB2030996B (en) * | 1978-09-26 | 1982-12-22 | Sumitomo Chemical Co | Process for producing aqueous emulsions of vinyl chloride/vinyl ester/ethylene copolymer |
GB2043092B (en) * | 1979-01-23 | 1982-12-15 | Toyo Aluminium Kk | Pigment composition and method of producing same |
JPS56122130A (en) * | 1980-02-28 | 1981-09-25 | Sharp Corp | Method for forming pattern of thin film transistor |
DE3032151A1 (de) * | 1980-08-26 | 1982-04-08 | Polychrome Corp., 10702 Yonkers, N.Y. | Einstufiges entwickler- und lackiergemisch, insbesondere fuer diazodruckformen |
US4628023A (en) * | 1981-04-10 | 1986-12-09 | Shipley Company Inc. | Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant |
EP0062733B1 (de) * | 1981-04-10 | 1986-01-02 | Shipley Company Inc. | Metallionenfreie Entwicklerzusammensetzung für Photoresist |
US4434009A (en) * | 1981-12-03 | 1984-02-28 | Toyo Aluminium Kabushiki Kaisha | Polymer-coated metallic pigments |
US4423138A (en) * | 1982-01-21 | 1983-12-27 | Eastman Kodak Company | Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist |
JPS58174947A (ja) * | 1982-04-07 | 1983-10-14 | Fuji Photo Film Co Ltd | 重合画像形成方法 |
EP0097282A3 (de) * | 1982-06-17 | 1984-07-25 | Shipley Company Inc. | Entwicklerzusammensetzung für Fotolacke |
JPS5964396A (ja) * | 1982-10-05 | 1984-04-12 | Fuji Photo Film Co Ltd | 平版印刷版用版面保護剤 |
JPS59182444A (ja) * | 1983-04-01 | 1984-10-17 | Sumitomo Chem Co Ltd | ポジ型フオトレジストの改良現像液 |
JPS59219743A (ja) * | 1983-05-28 | 1984-12-11 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト現像液 |
JPS59220732A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | フオトレジスト現像液 |
US4556629A (en) * | 1983-12-21 | 1985-12-03 | Morton Thiokol, Inc. | Developer composition for positive photoresists using solution with cyclic quaternary ammonium hydroxides |
DE3346979A1 (de) * | 1983-12-24 | 1985-07-04 | Merck Patent Gmbh, 6100 Darmstadt | Entwickler fuer positivfotoresists |
JPS60223120A (ja) * | 1984-04-20 | 1985-11-07 | Hitachi Ltd | 現像液 |
KR850008058A (ko) * | 1984-05-16 | 1985-12-11 | 로이 에이취, 맷신길 | 양성 포토레지스트 전개제 및 전개방법 |
DE3427556C1 (de) * | 1984-07-26 | 1986-01-02 | Merck Patent Gmbh, 6100 Darmstadt | Verfahren zur Herstellung von Fotoresist-Reliefstrukturen mit UEberhangcharakter |
US4613561A (en) * | 1984-10-17 | 1986-09-23 | James Marvin Lewis | Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution |
-
1984
- 1984-12-25 JP JP59278443A patent/JPH063549B2/ja not_active Expired - Lifetime
-
1985
- 1985-12-23 DE DE8585116494T patent/DE3574509D1/de not_active Expired - Lifetime
- 1985-12-23 EP EP85116494A patent/EP0186184B1/de not_active Expired
-
1988
- 1988-04-04 US US07/178,848 patent/US4914006A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4914006A (en) | 1990-04-03 |
EP0186184A3 (en) | 1986-08-13 |
JPS61151537A (ja) | 1986-07-10 |
EP0186184B1 (de) | 1989-11-29 |
EP0186184A2 (de) | 1986-07-02 |
JPH063549B2 (ja) | 1994-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8365 | Fully valid after opposition proceedings | ||
8339 | Ceased/non-payment of the annual fee |