DE3530222C2 - - Google Patents
Info
- Publication number
- DE3530222C2 DE3530222C2 DE3530222A DE3530222A DE3530222C2 DE 3530222 C2 DE3530222 C2 DE 3530222C2 DE 3530222 A DE3530222 A DE 3530222A DE 3530222 A DE3530222 A DE 3530222A DE 3530222 C2 DE3530222 C2 DE 3530222C2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- vertical
- electrodes
- light
- charge transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005540 biological transmission Effects 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical class [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59174923A JPS6153766A (ja) | 1984-08-24 | 1984-08-24 | インタ−ライン型電荷転送撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3530222A1 DE3530222A1 (de) | 1986-03-06 |
DE3530222C2 true DE3530222C2 (fr) | 1988-09-15 |
Family
ID=15987075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19853530222 Granted DE3530222A1 (de) | 1984-08-24 | 1985-08-23 | Ladungsuebertragungs-bildaufnahmevorrichtung des zwischenzeilen-typs |
Country Status (5)
Country | Link |
---|---|
US (1) | US4774586A (fr) |
JP (1) | JPS6153766A (fr) |
KR (1) | KR920010830B1 (fr) |
DE (1) | DE3530222A1 (fr) |
NL (1) | NL8502270A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3741963A1 (de) * | 1986-12-11 | 1988-06-16 | Sony Corp | Ccd-bildaufnahmevorrichtung und verfahren zu deren steuerung |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4908684A (en) * | 1986-07-07 | 1990-03-13 | Hitachi, Ltd. | Solid-state imaging device |
US4847692A (en) * | 1987-01-26 | 1989-07-11 | Fuji Photo Film Co., Ltd. | Solid-state image pickup device with CCDS in an interline transfer system and improved charge transfer electrode structure |
JPH0773349B2 (ja) * | 1987-03-13 | 1995-08-02 | 日本電気株式会社 | 二次元ccd撮像素子の駆動方法 |
JPH0773348B2 (ja) * | 1987-03-13 | 1995-08-02 | 日本電気株式会社 | 二次元ccd撮像素子の駆動方法 |
US5028970A (en) * | 1987-10-14 | 1991-07-02 | Fuji Photo Film Co., Ltd. | Image sensor |
JPH01106676A (ja) * | 1987-10-20 | 1989-04-24 | Mitsubishi Electric Corp | 固体イメージセンサ |
JPH01106677A (ja) * | 1987-10-20 | 1989-04-24 | Sony Corp | 電荷転送素子の出力回路 |
US5286669A (en) * | 1989-07-06 | 1994-02-15 | Kabushiki Kaisha Toshiba | Solid-state imaging device and method of manufacturing the same |
US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5210433A (en) * | 1990-02-26 | 1993-05-11 | Kabushiki Kaisha Toshiba | Solid-state CCD imaging device with transfer gap voltage controller |
DE69119624T2 (de) * | 1990-03-02 | 1997-01-16 | Sony Corp | Festkörperbildabtaster |
US5040071A (en) * | 1990-03-21 | 1991-08-13 | Eastman Kodak Company | Image sensor having multiple horizontal shift registers |
CA2052148A1 (fr) * | 1990-09-27 | 1992-03-28 | Tadashi Sugiki | Methode d'excitation de dispositif d'imagerie a semiconducteur |
JP2703416B2 (ja) * | 1991-03-29 | 1998-01-26 | シャープ株式会社 | インターライン転送型ccd撮像装置の駆動方法 |
JP3120465B2 (ja) * | 1991-04-15 | 2000-12-25 | ソニー株式会社 | 固体撮像素子 |
US5256891A (en) * | 1991-06-07 | 1993-10-26 | Eastman Kodak Company | CCD electrode structure for image sensors |
JPH0514816A (ja) * | 1991-06-28 | 1993-01-22 | Sharp Corp | 固体撮像装置およびその駆動方法 |
JP3560990B2 (ja) * | 1993-06-30 | 2004-09-02 | 株式会社東芝 | 固体撮像装置 |
JPH08512434A (ja) * | 1994-01-31 | 1996-12-24 | サイエンティフィク イメージング テクノロジーズ インコーポレイテッド | 分光検出用電荷結合素子配列 |
US5432335A (en) * | 1994-03-14 | 1995-07-11 | Princeton Instruments, Inc. | Charge-coupled device for spectroscopic detection |
US5786852A (en) * | 1994-06-20 | 1998-07-28 | Canon Kabushiki Kaisha | Image pick-up apparatus having an image sensing device including a photoelectric conversion part and a vertical transfer part |
US5614950A (en) * | 1995-08-02 | 1997-03-25 | Lg Semicon Co., Ltd. | CCD image sensor and method of preventing a smear phenomenon in the sensor |
JPH09200605A (ja) * | 1996-01-12 | 1997-07-31 | Sanyo Electric Co Ltd | ディジタルビデオカメラ |
KR100259084B1 (ko) * | 1997-07-25 | 2000-06-15 | 김영환 | 고체촬상소자및이의제조방법 |
KR100487501B1 (ko) * | 1997-09-25 | 2005-08-04 | 삼성전자주식회사 | 고체촬상장치 |
DE69942005D1 (de) * | 1998-12-28 | 2010-03-25 | Sanyo Electric Co | Bildaufnahmegerät und digitale Kamera |
US7038723B1 (en) * | 1999-04-26 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging device, method for driving the same and camera using the same |
KR100662502B1 (ko) * | 2000-12-30 | 2007-01-02 | 매그나칩 반도체 유한회사 | 고체 촬상 소자 |
US7554590B2 (en) * | 2003-02-26 | 2009-06-30 | Digital Imaging Systems Gmbh | Simultaneous readout of CMOS APS imagers |
JP2007295365A (ja) * | 2006-04-26 | 2007-11-08 | Sanyo Electric Co Ltd | 固体撮像素子の駆動方法 |
TWI319677B (en) * | 2006-10-20 | 2010-01-11 | Quanta Comp Inc | Method for displaying stereoscopic image and display system thereof |
JP5730030B2 (ja) * | 2011-01-17 | 2015-06-03 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US8878256B2 (en) | 2013-01-07 | 2014-11-04 | Semiconductor Components Industries, Llc | Image sensors with multiple output structures |
US8878255B2 (en) | 2013-01-07 | 2014-11-04 | Semiconductor Components Industries, Llc | Image sensors with multiple output structures |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL187288C (nl) * | 1980-02-19 | 1991-08-01 | Philips Nv | Ladingsgekoppelde beeldopneeminrichting en werkwijze ter vervaardiging daarvan. |
NL8000998A (nl) * | 1980-02-19 | 1981-09-16 | Philips Nv | Vaste stof opneemcamera met een halfgeleidende photogevoelige trefplaat. |
JPS5875382A (ja) * | 1981-07-20 | 1983-05-07 | Sony Corp | 固体撮像装置 |
JPS5831669A (ja) * | 1981-08-20 | 1983-02-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JPS58138187A (ja) * | 1982-02-12 | 1983-08-16 | Toshiba Corp | 固体イメ−ジセンサ |
JPS5984575A (ja) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | 固体撮像素子 |
FR2553920B1 (fr) * | 1983-10-21 | 1985-12-13 | Thomson Csf | Procede d'analyse d'un dispositif photosensible a structure interligne et dispositif pour sa mise en oeuvre |
JPS60142683A (ja) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US4620231A (en) * | 1984-06-18 | 1986-10-28 | Rca Corporation | CCD imager with photodetector bias introduced via the CCD register |
US4689687A (en) * | 1984-11-13 | 1987-08-25 | Hitachi, Ltd. | Charge transfer type solid-state imaging device |
US4656519A (en) * | 1985-10-04 | 1987-04-07 | Rca Corporation | Back-illuminated CCD imagers of interline transfer type |
-
1984
- 1984-08-24 JP JP59174923A patent/JPS6153766A/ja active Granted
-
1985
- 1985-08-16 NL NL8502270A patent/NL8502270A/nl not_active Application Discontinuation
- 1985-08-21 US US06/768,113 patent/US4774586A/en not_active Expired - Lifetime
- 1985-08-23 DE DE19853530222 patent/DE3530222A1/de active Granted
- 1985-08-23 KR KR1019850006102A patent/KR920010830B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3741963A1 (de) * | 1986-12-11 | 1988-06-16 | Sony Corp | Ccd-bildaufnahmevorrichtung und verfahren zu deren steuerung |
Also Published As
Publication number | Publication date |
---|---|
US4774586A (en) | 1988-09-27 |
JPH0578946B2 (fr) | 1993-10-29 |
KR920010830B1 (ko) | 1992-12-17 |
KR860002151A (ko) | 1986-03-26 |
DE3530222A1 (de) | 1986-03-06 |
JPS6153766A (ja) | 1986-03-17 |
NL8502270A (nl) | 1986-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |