DE3504184A1 - Verfahren zum herstellen von polykristallinen siliziumschichten mit glatten oberflaechen - Google Patents

Verfahren zum herstellen von polykristallinen siliziumschichten mit glatten oberflaechen

Info

Publication number
DE3504184A1
DE3504184A1 DE19853504184 DE3504184A DE3504184A1 DE 3504184 A1 DE3504184 A1 DE 3504184A1 DE 19853504184 DE19853504184 DE 19853504184 DE 3504184 A DE3504184 A DE 3504184A DE 3504184 A1 DE3504184 A1 DE 3504184A1
Authority
DE
Germany
Prior art keywords
deposition
stage
silicon
layer
carried out
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853504184
Other languages
German (de)
English (en)
Other versions
DE3504184C2 (https=
Inventor
Frank Stefan Dr.rer.nat. 8000 München Becker
Emmerich Dr.Phil. Bertagnolli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19853504184 priority Critical patent/DE3504184A1/de
Publication of DE3504184A1 publication Critical patent/DE3504184A1/de
Application granted granted Critical
Publication of DE3504184C2 publication Critical patent/DE3504184C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
DE19853504184 1985-02-07 1985-02-07 Verfahren zum herstellen von polykristallinen siliziumschichten mit glatten oberflaechen Granted DE3504184A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19853504184 DE3504184A1 (de) 1985-02-07 1985-02-07 Verfahren zum herstellen von polykristallinen siliziumschichten mit glatten oberflaechen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853504184 DE3504184A1 (de) 1985-02-07 1985-02-07 Verfahren zum herstellen von polykristallinen siliziumschichten mit glatten oberflaechen

Publications (2)

Publication Number Publication Date
DE3504184A1 true DE3504184A1 (de) 1986-08-07
DE3504184C2 DE3504184C2 (https=) 1988-10-06

Family

ID=6261928

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853504184 Granted DE3504184A1 (de) 1985-02-07 1985-02-07 Verfahren zum herstellen von polykristallinen siliziumschichten mit glatten oberflaechen

Country Status (1)

Country Link
DE (1) DE3504184A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310698A (en) * 1990-12-21 1994-05-10 Siemens Aktiengesellschaft Process for producing an arsenic-doped smooth polycrystalline silicon layer for very large scale integrated circuits
US5491107A (en) * 1993-01-21 1996-02-13 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US5792700A (en) * 1996-05-31 1998-08-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US5913125A (en) * 1992-06-26 1999-06-15 International Business Machines Corporation Method of controlling stress in a film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS ERMITTELT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310698A (en) * 1990-12-21 1994-05-10 Siemens Aktiengesellschaft Process for producing an arsenic-doped smooth polycrystalline silicon layer for very large scale integrated circuits
US5913125A (en) * 1992-06-26 1999-06-15 International Business Machines Corporation Method of controlling stress in a film
US5491107A (en) * 1993-01-21 1996-02-13 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US5792700A (en) * 1996-05-31 1998-08-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US6048781A (en) * 1996-05-31 2000-04-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films

Also Published As

Publication number Publication date
DE3504184C2 (https=) 1988-10-06

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee