DE3486054D1 - Fehlertolerante speicheranordnung. - Google Patents

Fehlertolerante speicheranordnung.

Info

Publication number
DE3486054D1
DE3486054D1 DE8484307427T DE3486054T DE3486054D1 DE 3486054 D1 DE3486054 D1 DE 3486054D1 DE 8484307427 T DE8484307427 T DE 8484307427T DE 3486054 T DE3486054 T DE 3486054T DE 3486054 D1 DE3486054 D1 DE 3486054D1
Authority
DE
Germany
Prior art keywords
memory cells
error
storage arrangement
bytes
tolerant storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484307427T
Other languages
English (en)
Other versions
DE3486054T2 (de
Inventor
George Perlegos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Seeq Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seeq Technology Inc filed Critical Seeq Technology Inc
Publication of DE3486054D1 publication Critical patent/DE3486054D1/de
Application granted granted Critical
Publication of DE3486054T2 publication Critical patent/DE3486054T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/18—Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits
    • G06F11/187—Voting techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Detection And Correction Of Errors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Hardware Redundancy (AREA)
DE8484307427T 1983-10-28 1984-10-29 Fehlertolerante speicheranordnung. Expired - Lifetime DE3486054T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/546,593 US4768169A (en) 1983-10-28 1983-10-28 Fault-tolerant memory array

Publications (2)

Publication Number Publication Date
DE3486054D1 true DE3486054D1 (de) 1993-03-11
DE3486054T2 DE3486054T2 (de) 1993-05-19

Family

ID=24181118

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484307427T Expired - Lifetime DE3486054T2 (de) 1983-10-28 1984-10-29 Fehlertolerante speicheranordnung.

Country Status (5)

Country Link
US (1) US4768169A (de)
EP (1) EP0140698B1 (de)
JP (1) JPS60173800A (de)
AT (1) ATE85139T1 (de)
DE (1) DE3486054T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264699A (ja) * 1988-04-15 1989-10-20 Sony Corp 不揮発性半導体記憶装置
US5029131A (en) * 1988-06-29 1991-07-02 Seeq Technology, Incorporated Fault tolerant differential memory cell and sensing
GB8916019D0 (en) * 1989-07-13 1989-08-31 Hughes Microelectronics Ltd A non-volatile ram bit cell
US5077737A (en) * 1989-08-18 1991-12-31 Micron Technology, Inc. Method and apparatus for storing digital data in off-specification dynamic random access memory devices
US5161157A (en) * 1990-03-12 1992-11-03 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
US5153880A (en) * 1990-03-12 1992-10-06 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
US5367655A (en) * 1991-12-23 1994-11-22 Motorola, Inc. Memory and associated method including an operating mode for simultaneously selecting multiple rows of cells
US5559981A (en) * 1994-02-14 1996-09-24 Motorola, Inc. Pseudo static mask option register and method therefor
US5956473A (en) * 1996-11-25 1999-09-21 Macronix International Co., Ltd. Method and system for managing a flash memory mass storage system
TW397982B (en) * 1997-09-18 2000-07-11 Sanyo Electric Co Nonvolatile semiconductor memory device
US6182239B1 (en) * 1998-02-06 2001-01-30 Stmicroelectronics, Inc. Fault-tolerant codes for multi-level memories
WO2000044001A1 (fr) * 1999-01-22 2000-07-27 Rohm Co., Ltd. Dispositif de stockage remanent a semi-conducteur
US6773083B2 (en) 2001-08-29 2004-08-10 Lexmark International, Inc. Method and apparatus for non-volatile memory usage in an ink jet printer
EP1714294B1 (de) * 2004-02-10 2016-04-20 Semiconductor Energy Laboratory Co., Ltd. Nichtflüchtiger speicher
US20100241783A1 (en) * 2009-03-23 2010-09-23 Honeywell International Inc. Memory node for use within a data storage system having a plurality of interconnected memory nodes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5622278A (en) * 1979-07-27 1981-03-02 Fujitsu Ltd Decoder selection system
NL8005756A (nl) * 1980-10-20 1982-05-17 Philips Nv Inrichting voor het opwekken van een reeks binair gewogen waarden van een elektrische grootheid.
JPS589292A (ja) * 1981-07-10 1983-01-19 Fujitsu Ltd 読出専用記憶装置読出し方式
JPS6059677B2 (ja) * 1981-08-19 1985-12-26 富士通株式会社 半導体記憶装置
JPS5856296A (ja) * 1981-09-29 1983-04-02 Mitsubishi Electric Corp 半導体メモリ素子
US4422161A (en) * 1981-10-08 1983-12-20 Rca Corporation Memory array with redundant elements
JPS58125299A (ja) * 1982-01-19 1983-07-26 Toshiba Corp 冗長度を有するメモリ装置
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4485459A (en) * 1982-09-20 1984-11-27 Fairchild Camera & Instrument Corp. Redundant columns for byte wide memories

Also Published As

Publication number Publication date
US4768169A (en) 1988-08-30
EP0140698A2 (de) 1985-05-08
EP0140698A3 (en) 1988-03-30
JPH0458680B2 (de) 1992-09-18
JPS60173800A (ja) 1985-09-07
DE3486054T2 (de) 1993-05-19
EP0140698B1 (de) 1993-01-27
ATE85139T1 (de) 1993-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ATMEL CORP., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: KAHLER, KAECK & FIENER, 86899 LANDSBERG