DE3485477D1 - Positive photolackzusammensetzung. - Google Patents
Positive photolackzusammensetzung.Info
- Publication number
- DE3485477D1 DE3485477D1 DE8484308020T DE3485477T DE3485477D1 DE 3485477 D1 DE3485477 D1 DE 3485477D1 DE 8484308020 T DE8484308020 T DE 8484308020T DE 3485477 T DE3485477 T DE 3485477T DE 3485477 D1 DE3485477 D1 DE 3485477D1
- Authority
- DE
- Germany
- Prior art keywords
- paint composition
- positive photo
- photo paint
- photoresist
- positive photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/04—Chromates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Paints Or Removers (AREA)
- Artificial Filaments (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Polysaccharides And Polysaccharide Derivatives (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/553,221 US4524121A (en) | 1983-11-21 | 1983-11-21 | Positive photoresists containing preformed polyglutarimide polymer |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3485477D1 true DE3485477D1 (de) | 1992-03-05 |
Family
ID=24208602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484308020T Expired - Fee Related DE3485477D1 (de) | 1983-11-21 | 1984-11-20 | Positive photolackzusammensetzung. |
Country Status (15)
Country | Link |
---|---|
US (1) | US4524121A (de) |
EP (1) | EP0145355B1 (de) |
JP (1) | JPH073579B2 (de) |
KR (1) | KR910007245B1 (de) |
AT (1) | ATE72060T1 (de) |
AU (1) | AU581193B2 (de) |
BR (1) | BR8405909A (de) |
CA (1) | CA1228498A (de) |
DE (1) | DE3485477D1 (de) |
HK (1) | HK44992A (de) |
IL (1) | IL73571A (de) |
MY (1) | MY103750A (de) |
PH (1) | PH21412A (de) |
SG (1) | SG35292G (de) |
ZA (1) | ZA849071B (de) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5059513A (en) * | 1983-11-01 | 1991-10-22 | Hoechst Celanese Corporation | Photochemical image process of positive photoresist element with maleimide copolymer |
US4857435A (en) * | 1983-11-01 | 1989-08-15 | Hoechst Celanese Corporation | Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer |
US4569897A (en) * | 1984-01-16 | 1986-02-11 | Rohm And Haas Company | Negative photoresist compositions with polyglutarimide polymer |
US4631249A (en) * | 1984-01-16 | 1986-12-23 | Rohm & Haas Company | Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition |
JPS60184504A (ja) * | 1984-03-02 | 1985-09-20 | Mitsubishi Rayon Co Ltd | 結晶性重合体 |
US4791046A (en) * | 1984-04-26 | 1988-12-13 | Oki Electric Industry Co., Ltd. | Process for forming mask patterns of positive type resist material with trimethylsilynitrile |
DE3582697D1 (de) * | 1984-06-07 | 1991-06-06 | Hoechst Ag | Positiv arbeitende strahlungsempfindliche beschichtungsloesung. |
JPS61144639A (ja) * | 1984-12-19 | 1986-07-02 | Hitachi Ltd | 放射線感応性組成物及びそれを用いたパタ−ン形成法 |
US4663268A (en) * | 1984-12-28 | 1987-05-05 | Eastman Kodak Company | High-temperature resistant photoresists featuring maleimide binders |
CA1254432A (en) * | 1984-12-28 | 1989-05-23 | Conrad G. Houle | High-temperature resistant, selectively developable positive-working resist |
JPS6238471A (ja) * | 1985-08-14 | 1987-02-19 | Fuji Photo Film Co Ltd | 感光性平版印刷版の製造方法 |
CA1290087C (en) * | 1985-10-17 | 1991-10-01 | Dale M. Crockatt | Film-forming compositions comprising polyglutarimide |
EP0224680B1 (de) * | 1985-12-05 | 1992-01-15 | International Business Machines Corporation | Photoresistzusammensetzungen mit vermindertem Lösungsgrad in basischen Entwicklern, auf Basis von durch Diazochinon sensibilisierter Polyamidsäure |
US4942108A (en) * | 1985-12-05 | 1990-07-17 | International Business Machines Corporation | Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers |
US4980264A (en) * | 1985-12-17 | 1990-12-25 | International Business Machines Corporation | Photoresist compositions of controlled dissolution rate in alkaline developers |
US4720445A (en) * | 1986-02-18 | 1988-01-19 | Allied Corporation | Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist |
US4837124A (en) * | 1986-02-24 | 1989-06-06 | Hoechst Celanese Corporation | High resolution photoresist of imide containing polymers |
US4968581A (en) * | 1986-02-24 | 1990-11-06 | Hoechst Celanese Corporation | High resolution photoresist of imide containing polymers |
US4912018A (en) * | 1986-02-24 | 1990-03-27 | Hoechst Celanese Corporation | High resolution photoresist based on imide containing polymers |
US4732841A (en) * | 1986-03-24 | 1988-03-22 | Fairchild Semiconductor Corporation | Tri-level resist process for fine resolution photolithography |
US4806453A (en) * | 1986-05-07 | 1989-02-21 | Shipley Company Inc. | Positive acting bilayer photoresist development |
JPS6336240A (ja) * | 1986-07-28 | 1988-02-16 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | レジスト構造の作成方法 |
US4863827A (en) * | 1986-10-20 | 1989-09-05 | American Hoechst Corporation | Postive working multi-level photoresist |
US4962171A (en) * | 1987-05-22 | 1990-10-09 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
US4810613A (en) * | 1987-05-22 | 1989-03-07 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
US5081001A (en) * | 1987-05-22 | 1992-01-14 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
US4814258A (en) * | 1987-07-24 | 1989-03-21 | Motorola Inc. | PMGI bi-layer lift-off process |
US4873176A (en) * | 1987-08-28 | 1989-10-10 | Shipley Company Inc. | Reticulation resistant photoresist coating |
EP0341843A3 (de) * | 1988-05-09 | 1991-03-27 | International Business Machines Corporation | Verfahren zur Herstellung eines Leitermusters |
JP2538081B2 (ja) * | 1988-11-28 | 1996-09-25 | 松下電子工業株式会社 | 現像液及びパタ―ン形成方法 |
US5455145A (en) * | 1988-12-24 | 1995-10-03 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing double layer resist pattern and double layer resist structure |
DE4018427A1 (de) * | 1990-06-14 | 1992-01-16 | Samsung Electronics Co Ltd | Fotolitographie-verfahren zur ausbildung eines feinlinigen musters |
US5227280A (en) * | 1991-09-04 | 1993-07-13 | International Business Machines Corporation | Resists with enhanced sensitivity and contrast |
US5879853A (en) * | 1996-01-18 | 1999-03-09 | Kabushiki Kaisha Toshiba | Top antireflective coating material and its process for DUV and VUV lithography systems |
KR100211546B1 (ko) * | 1996-10-24 | 1999-08-02 | 김영환 | 신규한 포토레지스트용 공중합체 |
TW432896B (en) * | 1997-10-15 | 2001-05-01 | Siemens Ag | Preparation of organic electroluminescencizing elements |
EP0915105B1 (de) * | 1997-11-07 | 2003-04-09 | Rohm And Haas Company | Kunstoffsubstrate zur Verwendung in elektronischen Anzeigesystemen |
GB9811813D0 (en) * | 1998-06-03 | 1998-07-29 | Horsell Graphic Ind Ltd | Polymeric compounds |
US6322860B1 (en) | 1998-11-02 | 2001-11-27 | Rohm And Haas Company | Plastic substrates for electronic display applications |
JP4082537B2 (ja) * | 1999-04-28 | 2008-04-30 | Tdk株式会社 | 光学処理溶液、反射防止膜形成方法、パターンメッキ方法及び薄膜磁気ヘッドの製造方法 |
US6395449B1 (en) | 2000-03-31 | 2002-05-28 | Microchem Corp. | Poly-hydroxy aromatic dissolution modifiers for lift-off resists |
US6303260B1 (en) | 2000-03-31 | 2001-10-16 | Microchem Corp. | Dissolution rate modifiers for lift-off resists |
US6680163B2 (en) * | 2000-12-04 | 2004-01-20 | United Microelectronics Corp. | Method of forming opening in wafer layer |
US6576407B2 (en) * | 2001-04-25 | 2003-06-10 | Macronix International Co. Ltd. | Method of improving astigmatism of a photoresist layer |
US6824952B1 (en) | 2001-09-13 | 2004-11-30 | Microchem Corp. | Deep-UV anti-reflective resist compositions |
KR100846085B1 (ko) * | 2001-10-31 | 2008-07-14 | 주식회사 동진쎄미켐 | 액정표시장치 회로용 포토레지스트 조성물 |
US6831274B2 (en) * | 2002-03-05 | 2004-12-14 | Battelle Memorial Institute | Method and apparatus for multispray emitter for mass spectrometry |
JP2004207731A (ja) * | 2002-12-20 | 2004-07-22 | Rohm & Haas Electronic Materials Llc | 電子デバイスの製造 |
KR100590579B1 (ko) * | 2005-02-01 | 2006-06-19 | 삼성에스디아이 주식회사 | 탄소나노튜브 에미터를 구비한 전계방출소자의 제조방법 |
US7364945B2 (en) | 2005-03-31 | 2008-04-29 | Stats Chippac Ltd. | Method of mounting an integrated circuit package in an encapsulant cavity |
US7354800B2 (en) | 2005-04-29 | 2008-04-08 | Stats Chippac Ltd. | Method of fabricating a stacked integrated circuit package system |
KR100787333B1 (ko) * | 2005-10-19 | 2007-12-18 | 주식회사 하이닉스반도체 | 감광제 경화 방지용 시너 조성물 |
US20070087951A1 (en) * | 2005-10-19 | 2007-04-19 | Hynix Semiconductor Inc. | Thinner composition for inhibiting photoresist from drying |
US7456088B2 (en) | 2006-01-04 | 2008-11-25 | Stats Chippac Ltd. | Integrated circuit package system including stacked die |
US7723146B2 (en) * | 2006-01-04 | 2010-05-25 | Stats Chippac Ltd. | Integrated circuit package system with image sensor system |
US7768125B2 (en) * | 2006-01-04 | 2010-08-03 | Stats Chippac Ltd. | Multi-chip package system |
US7947534B2 (en) * | 2006-02-04 | 2011-05-24 | Stats Chippac Ltd. | Integrated circuit packaging system including a non-leaded package |
US7750482B2 (en) * | 2006-02-09 | 2010-07-06 | Stats Chippac Ltd. | Integrated circuit package system including zero fillet resin |
US8704349B2 (en) * | 2006-02-14 | 2014-04-22 | Stats Chippac Ltd. | Integrated circuit package system with exposed interconnects |
US8870345B2 (en) * | 2012-07-16 | 2014-10-28 | Xerox Corporation | Method of making superoleophobic re-entrant resist structures |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4079041A (en) * | 1975-06-18 | 1978-03-14 | Ciba-Geigy Corporation | Crosslinkable polymeric compounds |
US3964908A (en) * | 1975-09-22 | 1976-06-22 | International Business Machines Corporation | Positive resists containing dimethylglutarimide units |
JPS52153672A (en) * | 1976-06-16 | 1977-12-20 | Matsushita Electric Ind Co Ltd | Electron beam resist and its usage |
US4254232A (en) * | 1978-12-08 | 1981-03-03 | Rohm And Haas Company | Polyglutarimides |
US4246374A (en) * | 1979-04-23 | 1981-01-20 | Rohm And Haas Company | Imidized acrylic polymers |
US4379874A (en) * | 1980-07-07 | 1983-04-12 | Stoy Vladimir A | Polymer composition comprising polyacrylonitrile polymer and multi-block copolymer |
US4400461A (en) * | 1981-05-22 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Process of making semiconductor devices using photosensitive bodies |
DE3485048D1 (de) * | 1983-11-01 | 1991-10-17 | Hoechst Celanese Corp | Tief uv-empfindliche positive photolackzusammensetzung, lichtempfindliches element und dasselbe enthaltendes gegen hitze widerstandsfaehiges photochemisches bild. |
-
1983
- 1983-11-21 US US06/553,221 patent/US4524121A/en not_active Expired - Fee Related
-
1984
- 1984-11-07 CA CA000467217A patent/CA1228498A/en not_active Expired
- 1984-11-09 PH PH31431A patent/PH21412A/en unknown
- 1984-11-19 KR KR1019840007241A patent/KR910007245B1/ko not_active IP Right Cessation
- 1984-11-20 DE DE8484308020T patent/DE3485477D1/de not_active Expired - Fee Related
- 1984-11-20 EP EP84308020A patent/EP0145355B1/de not_active Expired - Lifetime
- 1984-11-20 BR BR8405909A patent/BR8405909A/pt not_active IP Right Cessation
- 1984-11-20 AT AT84308020T patent/ATE72060T1/de not_active IP Right Cessation
- 1984-11-20 IL IL73571A patent/IL73571A/xx not_active IP Right Cessation
- 1984-11-21 JP JP59244710A patent/JPH073579B2/ja not_active Expired - Lifetime
- 1984-11-21 AU AU35736/84A patent/AU581193B2/en not_active Ceased
- 1984-11-21 ZA ZA849071A patent/ZA849071B/xx unknown
-
1988
- 1988-07-19 MY MYPI88000806A patent/MY103750A/en unknown
-
1992
- 1992-03-24 SG SG352/92A patent/SG35292G/en unknown
- 1992-06-18 HK HK449/92A patent/HK44992A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
KR910007245B1 (ko) | 1991-09-24 |
EP0145355B1 (de) | 1992-01-22 |
IL73571A (en) | 1988-05-31 |
CA1228498A (en) | 1987-10-27 |
AU581193B2 (en) | 1989-02-16 |
JPH073579B2 (ja) | 1995-01-18 |
AU3573684A (en) | 1985-05-30 |
HK44992A (en) | 1992-06-26 |
ZA849071B (en) | 1985-12-24 |
EP0145355A2 (de) | 1985-06-19 |
JPS60185946A (ja) | 1985-09-21 |
ATE72060T1 (de) | 1992-02-15 |
MY103750A (en) | 1993-09-30 |
KR850003991A (ko) | 1985-06-29 |
BR8405909A (pt) | 1985-09-10 |
IL73571A0 (en) | 1985-02-28 |
SG35292G (en) | 1992-07-24 |
US4524121A (en) | 1985-06-18 |
EP0145355A3 (en) | 1987-05-27 |
PH21412A (en) | 1987-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |