ATE72060T1 - Positive photolackzusammensetzung. - Google Patents

Positive photolackzusammensetzung.

Info

Publication number
ATE72060T1
ATE72060T1 AT84308020T AT84308020T ATE72060T1 AT E72060 T1 ATE72060 T1 AT E72060T1 AT 84308020 T AT84308020 T AT 84308020T AT 84308020 T AT84308020 T AT 84308020T AT E72060 T1 ATE72060 T1 AT E72060T1
Authority
AT
Austria
Prior art keywords
positive
photovarnish
composition
photoresist
positive photoresist
Prior art date
Application number
AT84308020T
Other languages
English (en)
Inventor
Robert David Gleim
Grandpre Mark Peter De
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Application granted granted Critical
Publication of ATE72060T1 publication Critical patent/ATE72060T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Paints Or Removers (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Artificial Filaments (AREA)
AT84308020T 1983-11-21 1984-11-20 Positive photolackzusammensetzung. ATE72060T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/553,221 US4524121A (en) 1983-11-21 1983-11-21 Positive photoresists containing preformed polyglutarimide polymer
EP84308020A EP0145355B1 (de) 1983-11-21 1984-11-20 Positive Photolackzusammensetzung

Publications (1)

Publication Number Publication Date
ATE72060T1 true ATE72060T1 (de) 1992-02-15

Family

ID=24208602

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84308020T ATE72060T1 (de) 1983-11-21 1984-11-20 Positive photolackzusammensetzung.

Country Status (15)

Country Link
US (1) US4524121A (de)
EP (1) EP0145355B1 (de)
JP (1) JPH073579B2 (de)
KR (1) KR910007245B1 (de)
AT (1) ATE72060T1 (de)
AU (1) AU581193B2 (de)
BR (1) BR8405909A (de)
CA (1) CA1228498A (de)
DE (1) DE3485477D1 (de)
HK (1) HK44992A (de)
IL (1) IL73571A (de)
MY (1) MY103750A (de)
PH (1) PH21412A (de)
SG (1) SG35292G (de)
ZA (1) ZA849071B (de)

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US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
US4569897A (en) * 1984-01-16 1986-02-11 Rohm And Haas Company Negative photoresist compositions with polyglutarimide polymer
US4631249A (en) * 1984-01-16 1986-12-23 Rohm & Haas Company Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition
JPS60184504A (ja) * 1984-03-02 1985-09-20 Mitsubishi Rayon Co Ltd 結晶性重合体
US4791046A (en) * 1984-04-26 1988-12-13 Oki Electric Industry Co., Ltd. Process for forming mask patterns of positive type resist material with trimethylsilynitrile
EP0164083B1 (de) * 1984-06-07 1991-05-02 Hoechst Aktiengesellschaft Positiv arbeitende strahlungsempfindliche Beschichtungslösung
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
CA1254432A (en) * 1984-12-28 1989-05-23 Conrad G. Houle High-temperature resistant, selectively developable positive-working resist
US4663268A (en) * 1984-12-28 1987-05-05 Eastman Kodak Company High-temperature resistant photoresists featuring maleimide binders
JPS6238471A (ja) * 1985-08-14 1987-02-19 Fuji Photo Film Co Ltd 感光性平版印刷版の製造方法
CA1290087C (en) * 1985-10-17 1991-10-01 Dale M. Crockatt Film-forming compositions comprising polyglutarimide
US4942108A (en) * 1985-12-05 1990-07-17 International Business Machines Corporation Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
EP0224680B1 (de) * 1985-12-05 1992-01-15 International Business Machines Corporation Photoresistzusammensetzungen mit vermindertem Lösungsgrad in basischen Entwicklern, auf Basis von durch Diazochinon sensibilisierter Polyamidsäure
US4980264A (en) * 1985-12-17 1990-12-25 International Business Machines Corporation Photoresist compositions of controlled dissolution rate in alkaline developers
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4912018A (en) * 1986-02-24 1990-03-27 Hoechst Celanese Corporation High resolution photoresist based on imide containing polymers
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4806453A (en) * 1986-05-07 1989-02-21 Shipley Company Inc. Positive acting bilayer photoresist development
JPS6336240A (ja) * 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
US5081001A (en) * 1987-05-22 1992-01-14 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4962171A (en) * 1987-05-22 1990-10-09 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4814258A (en) * 1987-07-24 1989-03-21 Motorola Inc. PMGI bi-layer lift-off process
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
EP0341843A3 (de) * 1988-05-09 1991-03-27 International Business Machines Corporation Verfahren zur Herstellung eines Leitermusters
JP2538081B2 (ja) * 1988-11-28 1996-09-25 松下電子工業株式会社 現像液及びパタ―ン形成方法
US5455145A (en) * 1988-12-24 1995-10-03 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing double layer resist pattern and double layer resist structure
DE4018427A1 (de) * 1990-06-14 1992-01-16 Samsung Electronics Co Ltd Fotolitographie-verfahren zur ausbildung eines feinlinigen musters
US5227280A (en) * 1991-09-04 1993-07-13 International Business Machines Corporation Resists with enhanced sensitivity and contrast
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
KR100211546B1 (ko) * 1996-10-24 1999-08-02 김영환 신규한 포토레지스트용 공중합체
TW432896B (en) * 1997-10-15 2001-05-01 Siemens Ag Preparation of organic electroluminescencizing elements
EP0915105B1 (de) * 1997-11-07 2003-04-09 Rohm And Haas Company Kunstoffsubstrate zur Verwendung in elektronischen Anzeigesystemen
GB9811813D0 (en) * 1998-06-03 1998-07-29 Horsell Graphic Ind Ltd Polymeric compounds
US6322860B1 (en) 1998-11-02 2001-11-27 Rohm And Haas Company Plastic substrates for electronic display applications
JP4082537B2 (ja) * 1999-04-28 2008-04-30 Ｔｄｋ株式会社 光学処理溶液、反射防止膜形成方法、パターンメッキ方法及び薄膜磁気ヘッドの製造方法
US6395449B1 (en) 2000-03-31 2002-05-28 Microchem Corp. Poly-hydroxy aromatic dissolution modifiers for lift-off resists
US6303260B1 (en) 2000-03-31 2001-10-16 Microchem Corp. Dissolution rate modifiers for lift-off resists
US6680163B2 (en) * 2000-12-04 2004-01-20 United Microelectronics Corp. Method of forming opening in wafer layer
US6576407B2 (en) * 2001-04-25 2003-06-10 Macronix International Co. Ltd. Method of improving astigmatism of a photoresist layer
US6824952B1 (en) 2001-09-13 2004-11-30 Microchem Corp. Deep-UV anti-reflective resist compositions
KR100846085B1 (ko) * 2001-10-31 2008-07-14 주식회사 동진쎄미켐 액정표시장치 회로용 포토레지스트 조성물
US6831274B2 (en) * 2002-03-05 2004-12-14 Battelle Memorial Institute Method and apparatus for multispray emitter for mass spectrometry
KR20040055685A (ko) * 2002-12-20 2004-06-26 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 전자 디바이스 제조
KR100590579B1 (ko) * 2005-02-01 2006-06-19 삼성에스디아이 주식회사 탄소나노튜브 에미터를 구비한 전계방출소자의 제조방법
US7364945B2 (en) * 2005-03-31 2008-04-29 Stats Chippac Ltd. Method of mounting an integrated circuit package in an encapsulant cavity
US7354800B2 (en) 2005-04-29 2008-04-08 Stats Chippac Ltd. Method of fabricating a stacked integrated circuit package system
KR100787333B1 (ko) * 2005-10-19 2007-12-18 주식회사 하이닉스반도체 감광제 경화 방지용 시너 조성물
US20070087951A1 (en) * 2005-10-19 2007-04-19 Hynix Semiconductor Inc. Thinner composition for inhibiting photoresist from drying
US7723146B2 (en) * 2006-01-04 2010-05-25 Stats Chippac Ltd. Integrated circuit package system with image sensor system
US7456088B2 (en) * 2006-01-04 2008-11-25 Stats Chippac Ltd. Integrated circuit package system including stacked die
US7768125B2 (en) * 2006-01-04 2010-08-03 Stats Chippac Ltd. Multi-chip package system
US7947534B2 (en) * 2006-02-04 2011-05-24 Stats Chippac Ltd. Integrated circuit packaging system including a non-leaded package
US7750482B2 (en) * 2006-02-09 2010-07-06 Stats Chippac Ltd. Integrated circuit package system including zero fillet resin
US8704349B2 (en) * 2006-02-14 2014-04-22 Stats Chippac Ltd. Integrated circuit package system with exposed interconnects
US8870345B2 (en) * 2012-07-16 2014-10-28 Xerox Corporation Method of making superoleophobic re-entrant resist structures

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US3964908A (en) * 1975-09-22 1976-06-22 International Business Machines Corporation Positive resists containing dimethylglutarimide units
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US4254232A (en) * 1978-12-08 1981-03-03 Rohm And Haas Company Polyglutarimides
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US4379874A (en) * 1980-07-07 1983-04-12 Stoy Vladimir A Polymer composition comprising polyacrylonitrile polymer and multi-block copolymer
US4400461A (en) * 1981-05-22 1983-08-23 Bell Telephone Laboratories, Incorporated Process of making semiconductor devices using photosensitive bodies
EP0140273B1 (de) * 1983-11-01 1991-09-11 Hoechst Celanese Corporation Tief UV-empfindliche positive Photolackzusammensetzung, lichtempfindliches Element und dasselbe enthaltendes gegen Hitze widerstandsfähiges photochemisches Bild

Also Published As

Publication number Publication date
MY103750A (en) 1993-09-30
JPS60185946A (ja) 1985-09-21
HK44992A (en) 1992-06-26
CA1228498A (en) 1987-10-27
EP0145355A2 (de) 1985-06-19
IL73571A0 (en) 1985-02-28
PH21412A (en) 1987-10-15
AU3573684A (en) 1985-05-30
EP0145355A3 (en) 1987-05-27
US4524121A (en) 1985-06-18
EP0145355B1 (de) 1992-01-22
ZA849071B (en) 1985-12-24
AU581193B2 (en) 1989-02-16
BR8405909A (pt) 1985-09-10
IL73571A (en) 1988-05-31
SG35292G (en) 1992-07-24
DE3485477D1 (de) 1992-03-05
JPH073579B2 (ja) 1995-01-18
KR910007245B1 (ko) 1991-09-24
KR850003991A (ko) 1985-06-29

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee