DE3485402D1 - Matrixanordnung fuer eeproms. - Google Patents

Matrixanordnung fuer eeproms.

Info

Publication number
DE3485402D1
DE3485402D1 DE8484201001T DE3485402T DE3485402D1 DE 3485402 D1 DE3485402 D1 DE 3485402D1 DE 8484201001 T DE8484201001 T DE 8484201001T DE 3485402 T DE3485402 T DE 3485402T DE 3485402 D1 DE3485402 D1 DE 3485402D1
Authority
DE
Germany
Prior art keywords
eeproms
matrix arrangement
matrix
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484201001T
Other languages
English (en)
Inventor
Sheng Fang
Kamesware Kolla Rao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3485402D1 publication Critical patent/DE3485402D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
DE8484201001T 1983-07-11 1984-07-10 Matrixanordnung fuer eeproms. Expired - Lifetime DE3485402D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/512,853 US4566080A (en) 1983-07-11 1983-07-11 Byte wide EEPROM with individual write circuits

Publications (1)

Publication Number Publication Date
DE3485402D1 true DE3485402D1 (de) 1992-02-13

Family

ID=24040860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484201001T Expired - Lifetime DE3485402D1 (de) 1983-07-11 1984-07-10 Matrixanordnung fuer eeproms.

Country Status (6)

Country Link
US (1) US4566080A (de)
EP (1) EP0131344B1 (de)
JP (1) JPH0697557B2 (de)
KR (1) KR920001076B1 (de)
DE (1) DE3485402D1 (de)
IE (1) IE57868B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211069A4 (de) * 1985-02-11 1990-06-27 Advanced Micro Devices Inc Effiziente seitenmodusschreibschaltung für eeproms.
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
EP0332274B1 (de) * 1988-03-09 1994-06-22 Koninklijke Philips Electronics N.V. EEPROM mit durch Daten gesteuerten Löschungs- und Schreibmodus
JPH03232196A (ja) * 1990-02-07 1991-10-16 Toshiba Corp 半導体記憶装置
JP2971302B2 (ja) * 1993-06-30 1999-11-02 シャープ株式会社 Ｅｅｐｒｏｍを使用した記録装置
US5630063A (en) * 1994-04-28 1997-05-13 Rockwell International Corporation Data distribution system for multi-processor memories using simultaneous data transfer without processor intervention
JP4309421B2 (ja) 2006-12-25 2009-08-05 エルピーダメモリ株式会社 半導体記憶装置とその書き込み制御方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090258A (en) * 1976-12-29 1978-05-16 Westinghouse Electric Corp. MNOS non-volatile memory with write cycle suppression
US4149270A (en) * 1977-09-26 1979-04-10 Westinghouse Electric Corp. Variable threshold device memory circuit having automatic refresh feature
JPS582438B2 (ja) * 1978-02-17 1983-01-17 三洋電機株式会社 不揮発性半導体メモリ装置
JPS54137933A (en) * 1978-04-18 1979-10-26 Sharp Corp Programmable nonvolatile rom
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
JPS55150179A (en) * 1979-05-04 1980-11-21 Fujitsu Ltd Semiconductor memory unit
JPS56130884A (en) * 1980-03-14 1981-10-14 Toshiba Corp Semiconductor memory device
EP0050005B1 (de) * 1980-10-15 1988-05-18 Kabushiki Kaisha Toshiba Halbleiterspeicher mit Programmierungszeit
US4377857A (en) * 1980-11-18 1983-03-22 Fairchild Camera & Instrument Electrically erasable programmable read-only memory
JPS57150192A (en) * 1981-03-13 1982-09-16 Toshiba Corp Non-volatile semiconductor memory device
JPS57193066A (en) * 1982-03-31 1982-11-27 Hitachi Ltd Eprom device
JPS59142474A (ja) * 1983-02-04 1984-08-15 Fujitsu Ltd スイツチマトリツクス試験方式

Also Published As

Publication number Publication date
KR920001076B1 (ko) 1992-02-01
US4566080A (en) 1986-01-21
IE57868B1 (en) 1993-05-05
EP0131344B1 (de) 1992-01-02
JPH0697557B2 (ja) 1994-11-30
EP0131344A3 (en) 1987-09-23
EP0131344A2 (de) 1985-01-16
IE841745L (en) 1985-01-11
KR850001614A (ko) 1985-03-30
JPS6052999A (ja) 1985-03-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee