DE3478775D1 - Apparatus and method for ion implantation - Google Patents

Apparatus and method for ion implantation

Info

Publication number
DE3478775D1
DE3478775D1 DE8484305545T DE3478775T DE3478775D1 DE 3478775 D1 DE3478775 D1 DE 3478775D1 DE 8484305545 T DE8484305545 T DE 8484305545T DE 3478775 T DE3478775 T DE 3478775T DE 3478775 D1 DE3478775 D1 DE 3478775D1
Authority
DE
Germany
Prior art keywords
ion implantation
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484305545T
Other languages
English (en)
Inventor
Derek Aitken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE3478775D1 publication Critical patent/DE3478775D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/28—Static spectrometers
    • H01J49/30—Static spectrometers using magnetic analysers, e.g. Dempster spectrometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/028—Negative ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
DE8484305545T 1983-08-15 1984-08-15 Apparatus and method for ion implantation Expired DE3478775D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52346383A 1983-08-15 1983-08-15

Publications (1)

Publication Number Publication Date
DE3478775D1 true DE3478775D1 (en) 1989-07-27

Family

ID=24085124

Family Applications (4)

Application Number Title Priority Date Filing Date
DE8484305547T Expired DE3480449D1 (de) 1983-08-15 1984-08-15 Apparatus for ion implantation
DE8484305544T Expired - Lifetime DE3483552D1 (de) 1983-08-15 1984-08-15 System und methode zur ionenimplantation.
DE8484305543T Expired - Lifetime DE3484334D1 (de) 1983-08-15 1984-08-15 Vorrichtung und verfahren zur ionenimplantation.
DE8484305545T Expired DE3478775D1 (en) 1983-08-15 1984-08-15 Apparatus and method for ion implantation

Family Applications Before (3)

Application Number Title Priority Date Filing Date
DE8484305547T Expired DE3480449D1 (de) 1983-08-15 1984-08-15 Apparatus for ion implantation
DE8484305544T Expired - Lifetime DE3483552D1 (de) 1983-08-15 1984-08-15 System und methode zur ionenimplantation.
DE8484305543T Expired - Lifetime DE3484334D1 (de) 1983-08-15 1984-08-15 Vorrichtung und verfahren zur ionenimplantation.

Country Status (3)

Country Link
EP (5) EP0135366B1 (de)
JP (5) JPH0736323B2 (de)
DE (4) DE3480449D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587432A (en) * 1984-08-03 1986-05-06 Applied Materials, Inc. Apparatus for ion implantation
JPS61107643A (ja) * 1984-10-30 1986-05-26 Hitachi Ltd 蒸発炉付イオン源
GB8522976D0 (en) * 1985-09-17 1985-10-23 Atomic Energy Authority Uk Ion sources
JPH0656746B2 (ja) * 1986-04-02 1994-07-27 株式会社日立製作所 イオン打込装置用イオン源
JPH0722008B2 (ja) * 1986-04-04 1995-03-08 理化学研究所 電子ビ−ム源
GB2191334A (en) * 1986-06-05 1987-12-09 Boc Group Plc Mass spectrometer
NL8601492A (nl) * 1986-06-10 1988-01-04 Boc Group Plc Verbeteringen bij massaspectrometers.
JP2635028B2 (ja) * 1986-10-24 1997-07-30 株式会社日立製作所 マイクロ波イオン源
GB2233124B (en) * 1989-06-06 1994-02-09 Mitsubishi Electric Corp Ion implantation apparatus
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5196706A (en) * 1991-07-30 1993-03-23 International Business Machines Corporation Extractor and deceleration lens for ion beam deposition apparatus
GB9210887D0 (en) * 1992-05-21 1992-07-08 Superion Ltd Resolving slit assembly and method of ion implantation
GB2298083B (en) * 1995-02-18 1998-11-18 Atomic Energy Authority Uk Parallel ion beam ion generator
GB9515090D0 (en) * 1995-07-21 1995-09-20 Applied Materials Inc An ion beam apparatus
US7118996B1 (en) 1996-05-15 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for doping
JP4593548B2 (ja) * 1996-05-15 2010-12-08 株式会社半導体エネルギー研究所 ドーピング処理装置
US6060715A (en) * 1997-10-31 2000-05-09 Applied Materials, Inc. Method and apparatus for ion beam scanning in an ion implanter
EP1105908B1 (de) * 1999-06-23 2005-03-02 Applied Materials, Inc. Vorrichtung zur erzeugung von ionenstrahlen
US6635880B1 (en) * 1999-10-05 2003-10-21 Varian Semiconductor Equipment Associates, Inc. High transmission, low energy beamline architecture for ion implanter
GB2386247B (en) 2002-01-11 2005-09-07 Applied Materials Inc Ion beam generator
US7145157B2 (en) 2003-09-11 2006-12-05 Applied Materials, Inc. Kinematic ion implanter electrode mounting
JP4954465B2 (ja) * 2004-11-30 2012-06-13 株式会社Ｓｅｎ イオンビーム／荷電粒子ビーム照射装置
US8314009B2 (en) 2007-09-14 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
KR100978793B1 (ko) * 2008-11-19 2010-08-30 한국원자력연구원 다중 전극을 이용한 저에너지·대전류·대면적 빔 제조 장치 및 수송 장치
NL2010760C2 (en) * 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
US9318302B1 (en) * 2015-03-31 2016-04-19 Axcelis Technologies, Inc. Integrated extraction electrode manipulator for ion source

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3122631A (en) 1960-02-05 1964-02-25 Atlas Werke Ag Apparatus for focusing a line type ion beam on a mass spectrometer analyzer
DE1578167A1 (de) * 1967-07-26 1972-02-17 Karlsruhe Augsburg Iweka Treibspiegel-Geschoss
GB1280012A (en) * 1969-02-05 1972-07-05 Atomic Energy Authority Uk Improvements in or relating to ion beam sources
FR2061809A5 (de) * 1969-04-04 1971-06-25 Commissariat Energie Atomique
US3767952A (en) * 1972-10-24 1973-10-23 Ca Atomic Energy Ltd Ion source with reduced emittance
JPS509898A (de) * 1973-06-04 1975-01-31
DE2362723C3 (de) * 1973-12-17 1982-02-18 Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt Ionenquelle zur Erzeugung einfach und/oder mehrfach geladener Ionen
GB1518282A (en) * 1974-07-31 1978-07-19 Atomic Energy Authority Uk Ion beam separators
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
US3999097A (en) * 1975-06-30 1976-12-21 International Business Machines Corporation Ion implantation apparatus utilizing multiple aperture source plate and single aperture accel-decel system
JPS5214582A (en) * 1975-07-24 1977-02-03 Hitachi Zosen Corp Reactor having a fixed layer of catalyst
US4139772A (en) * 1977-08-08 1979-02-13 Western Electric Co., Inc. Plasma discharge ion source
JPS5457859A (en) * 1977-10-17 1979-05-10 Hitachi Ltd Ion source
US4149084A (en) * 1977-11-01 1979-04-10 International Business Machines Corporation Apparatus for maintaining ion bombardment beam under improved vacuum condition
US4146810A (en) * 1977-12-29 1979-03-27 International Business Machines Corporation Radiation heated acceleration
DE2920972A1 (de) * 1978-05-25 1979-11-29 Kratos Ltd Vorrichtung zur spektroskopie mit geladenen teilchen
DE2855864A1 (de) * 1978-12-22 1980-07-10 Ibm Deutschland Ionenquelle, insbesondere fuer ionenimplantationsanlagen
JPS5852297B2 (ja) * 1979-06-04 1983-11-21 株式会社日立製作所 マイクロ波イオン源
JPS57130358A (en) * 1981-02-05 1982-08-12 Nippon Telegr & Teleph Corp <Ntt> Full automatic ion implantation device
JPS57182864U (de) * 1981-05-18 1982-11-19
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
JPS5821949U (ja) * 1981-08-04 1983-02-10 日新ハイボルテ−ジ株式会社 イオン源装置
DE3278486D1 (en) * 1981-12-07 1988-06-16 Vg Instr Group Improvements in or relating to multiple collector mass spectrometers
DE3150156C2 (de) * 1981-12-18 1986-04-30 Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt Hochstrom-Ionenquelle
US4421988A (en) * 1982-02-18 1983-12-20 Varian Associates, Inc. Beam scanning method and apparatus for ion implantation
JPS5923432A (ja) * 1982-07-30 1984-02-06 Hitachi Ltd プラズマイオン源

Also Published As

Publication number Publication date
EP0145120B1 (de) 1989-11-08
JPH0531259B2 (de) 1993-05-12
DE3484334D1 (de) 1991-05-02
JPS60105156A (ja) 1985-06-10
EP0139377A1 (de) 1985-05-02
JPS60105154A (ja) 1985-06-10
DE3480449D1 (de) 1989-12-14
JPS60107246A (ja) 1985-06-12
EP0145120A1 (de) 1985-06-19
EP0139377B1 (de) 1991-03-27
JPH0719560B2 (ja) 1995-03-06
JPH0746593B2 (ja) 1995-05-17
EP0137649A1 (de) 1985-04-17
DE3483552D1 (de) 1990-12-13
EP0145119A1 (de) 1985-06-19
EP0135366A1 (de) 1985-03-27
JPH0727766B2 (ja) 1995-03-29
EP0137649B1 (de) 1989-06-21
EP0135366B1 (de) 1990-11-07
JPS60105153A (ja) 1985-06-10
JPH0736323B2 (ja) 1995-04-19
JPS60105155A (ja) 1985-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee