DE3477530D1 - Method of forming a metallic silicide - Google Patents
Method of forming a metallic silicideInfo
- Publication number
- DE3477530D1 DE3477530D1 DE8484104198T DE3477530T DE3477530D1 DE 3477530 D1 DE3477530 D1 DE 3477530D1 DE 8484104198 T DE8484104198 T DE 8484104198T DE 3477530 T DE3477530 T DE 3477530T DE 3477530 D1 DE3477530 D1 DE 3477530D1
- Authority
- DE
- Germany
- Prior art keywords
- forming
- metallic silicide
- silicide
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021332 silicide Inorganic materials 0.000 title 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/492,069 US4545116A (en) | 1983-05-06 | 1983-05-06 | Method of forming a titanium disilicide |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3477530D1 true DE3477530D1 (en) | 1989-05-03 |
Family
ID=23954815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484104198T Expired DE3477530D1 (en) | 1983-05-06 | 1984-04-13 | Method of forming a metallic silicide |
Country Status (4)
Country | Link |
---|---|
US (1) | US4545116A (de) |
EP (1) | EP0128304B1 (de) |
JP (2) | JPS6052044A (de) |
DE (1) | DE3477530D1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59125640A (ja) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS60217657A (ja) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
US4829363A (en) * | 1984-04-13 | 1989-05-09 | Fairchild Camera And Instrument Corp. | Structure for inhibiting dopant out-diffusion |
GB2164491B (en) * | 1984-09-14 | 1988-04-07 | Stc Plc | Semiconductor devices |
JPS61137367A (ja) * | 1984-12-10 | 1986-06-25 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US4920071A (en) * | 1985-03-15 | 1990-04-24 | Fairchild Camera And Instrument Corporation | High temperature interconnect system for an integrated circuit |
JPS61214427A (ja) * | 1985-03-19 | 1986-09-24 | Nippon Gakki Seizo Kk | 半導体装置の電極形成法 |
US4821085A (en) * | 1985-05-01 | 1989-04-11 | Texas Instruments Incorporated | VLSI local interconnect structure |
US4804636A (en) * | 1985-05-01 | 1989-02-14 | Texas Instruments Incorporated | Process for making integrated circuits having titanium nitride triple interconnect |
US4751198A (en) * | 1985-09-11 | 1988-06-14 | Texas Instruments Incorporated | Process for making contacts and interconnections using direct-reacted silicide |
JP2615390B2 (ja) * | 1985-10-07 | 1997-05-28 | 工業技術院長 | 炭化シリコン電界効果トランジスタの製造方法 |
JPH0682641B2 (ja) * | 1985-10-21 | 1994-10-19 | 日本電気株式会社 | 半導体集積回路装置の製造方法 |
US4663191A (en) * | 1985-10-25 | 1987-05-05 | International Business Machines Corporation | Salicide process for forming low sheet resistance doped silicon junctions |
US4746219A (en) * | 1986-03-07 | 1988-05-24 | Texas Instruments Incorporated | Local interconnect |
US4983544A (en) * | 1986-10-20 | 1991-01-08 | International Business Machines Corporation | Silicide bridge contact process |
JP2609313B2 (ja) * | 1986-12-11 | 1997-05-14 | フェアチャイルド セミコンダクタ コーポレーション | バイポーラ修正型アイソプレーナ集積回路構成体及びその製造方法 |
US4849344A (en) * | 1986-12-11 | 1989-07-18 | Fairchild Semiconductor Corporation | Enhanced density modified isoplanar process |
US4855798A (en) * | 1986-12-19 | 1989-08-08 | Texas Instruments Incorporated | Semiconductor and process of fabrication thereof |
US4816423A (en) * | 1987-05-01 | 1989-03-28 | Texas Instruments Incorporated | Bicmos process for forming shallow npn emitters and mosfet source/drains |
US5059546A (en) * | 1987-05-01 | 1991-10-22 | Texas Instruments Incorporated | BICMOS process for forming shallow NPN emitters and mosfet source/drains |
US4784973A (en) * | 1987-08-24 | 1988-11-15 | Inmos Corporation | Semiconductor contact silicide/nitride process with control for silicide thickness |
FR2624304B1 (fr) * | 1987-12-04 | 1990-05-04 | Philips Nv | Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium |
JPH01173714A (ja) * | 1987-12-21 | 1989-07-10 | Internatl Business Mach Corp <Ibm> | ブリツジ接点の形成方法 |
US4873205A (en) * | 1987-12-21 | 1989-10-10 | International Business Machines Corporation | Method for providing silicide bridge contact between silicon regions separated by a thin dielectric |
WO1989011732A1 (en) * | 1988-05-24 | 1989-11-30 | Micron Technology, Inc. | Tisi2 local interconnects |
KR930004295B1 (ko) * | 1988-12-24 | 1993-05-22 | 삼성전자 주식회사 | Vlsi 장치의 n+ 및 p+ 저항영역에 저저항 접속방법 |
US4920073A (en) * | 1989-05-11 | 1990-04-24 | Texas Instruments, Incorporated | Selective silicidation process using a titanium nitride protective layer |
US5059554A (en) * | 1989-06-23 | 1991-10-22 | Sgs-Thomson Microelectronics, Inc. | Method for forming polycrystalline silicon contacts |
US5443996A (en) * | 1990-05-14 | 1995-08-22 | At&T Global Information Solutions Company | Process for forming titanium silicide local interconnect |
US5086017A (en) * | 1991-03-21 | 1992-02-04 | Industrial Technology Research Institute | Self aligned silicide process for gate/runner without extra masking |
US5250834A (en) * | 1991-09-19 | 1993-10-05 | International Business Machines Corporation | Silicide interconnection with schottky barrier diode isolation |
US5387548A (en) * | 1992-06-22 | 1995-02-07 | Motorola, Inc. | Method of forming an etched ohmic contact |
US5344793A (en) * | 1993-03-05 | 1994-09-06 | Siemens Aktiengesellschaft | Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation |
JP3256048B2 (ja) * | 1993-09-20 | 2002-02-12 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR0162673B1 (ko) * | 1994-01-11 | 1998-12-01 | 문정환 | 반도체 도전층 및 반도체소자의 제조방법 |
JP3238820B2 (ja) * | 1994-02-18 | 2001-12-17 | 富士通株式会社 | 半導体装置 |
JPH07263544A (ja) * | 1994-03-17 | 1995-10-13 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5624869A (en) * | 1994-04-13 | 1997-04-29 | International Business Machines Corporation | Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen |
JP2630292B2 (ja) * | 1995-02-27 | 1997-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2751859B2 (ja) * | 1995-03-15 | 1998-05-18 | 日本電気株式会社 | 半導体装置の製造方法 |
US5654570A (en) * | 1995-04-19 | 1997-08-05 | International Business Machines Corporation | CMOS gate stack |
US6096638A (en) | 1995-10-28 | 2000-08-01 | Nec Corporation | Method for forming a refractory metal silicide layer |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
GB2320130B (en) * | 1996-08-09 | 2001-11-07 | United Microelectronics Corp | Improved self-ligned silicide manufacturing method |
JPH10189483A (ja) * | 1996-12-26 | 1998-07-21 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
TW326551B (en) * | 1997-07-11 | 1998-02-11 | Holtek Microelectronics Inc | The manufacturing method for Ti-salicide in IC |
US6127276A (en) * | 1998-06-02 | 2000-10-03 | United Microelectronics Corp | Method of formation for a via opening |
US6235630B1 (en) * | 1998-08-19 | 2001-05-22 | Micron Technology, Inc. | Silicide pattern structures and methods of fabricating the same |
EP1348232B1 (de) * | 2001-01-04 | 2007-05-23 | Infineon Technologies AG | Verfahren zur kontaktierung eines dotiergebiets eines halbleiterbauelements |
JP6823533B2 (ja) * | 2017-04-24 | 2021-02-03 | 東京エレクトロン株式会社 | チタンシリサイド領域を形成する方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3855612A (en) * | 1972-01-03 | 1974-12-17 | Signetics Corp | Schottky barrier diode semiconductor structure and method |
NL7510903A (nl) * | 1975-09-17 | 1977-03-21 | Philips Nv | Werkwijze voor het vervaardigen van een halfgelei- derinrichting, en inrichting vervaardigd volgens de werkwijze. |
US4056642A (en) * | 1976-05-14 | 1977-11-01 | Data General Corporation | Method of fabricating metal-semiconductor interfaces |
US4243865A (en) * | 1976-05-14 | 1981-01-06 | Data General Corporation | Process for treating material in plasma environment |
JPS5333077A (en) * | 1976-09-08 | 1978-03-28 | Nec Corp | Semiconductor integrated circuit |
JPS6057227B2 (ja) * | 1976-11-11 | 1985-12-13 | 日本電気株式会社 | 半導体装置の製造方法 |
JPS5583229A (en) * | 1978-12-19 | 1980-06-23 | Fujitsu Ltd | Producing semiconductor device |
JPS55143051A (en) * | 1979-04-26 | 1980-11-08 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS5671976A (en) * | 1979-11-19 | 1981-06-15 | Seiko Epson Corp | Preparation method of mos type semiconductor system |
JPS584924A (ja) * | 1981-07-01 | 1983-01-12 | Hitachi Ltd | 半導体装置の電極形成方法 |
-
1983
- 1983-05-06 US US06/492,069 patent/US4545116A/en not_active Expired - Lifetime
-
1984
- 1984-04-13 EP EP84104198A patent/EP0128304B1/de not_active Expired
- 1984-04-13 DE DE8484104198T patent/DE3477530D1/de not_active Expired
- 1984-05-04 JP JP59088585A patent/JPS6052044A/ja active Granted
-
1989
- 1989-02-03 JP JP1025594A patent/JPH01252763A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0581664B2 (de) | 1993-11-15 |
US4545116A (en) | 1985-10-08 |
JPH0365658B2 (de) | 1991-10-14 |
JPS6052044A (ja) | 1985-03-23 |
EP0128304B1 (de) | 1989-03-29 |
EP0128304A1 (de) | 1984-12-19 |
JPH01252763A (ja) | 1989-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8365 | Fully valid after opposition proceedings |