DE3442367C2 - - Google Patents
Info
- Publication number
- DE3442367C2 DE3442367C2 DE3442367A DE3442367A DE3442367C2 DE 3442367 C2 DE3442367 C2 DE 3442367C2 DE 3442367 A DE3442367 A DE 3442367A DE 3442367 A DE3442367 A DE 3442367A DE 3442367 C2 DE3442367 C2 DE 3442367C2
- Authority
- DE
- Germany
- Prior art keywords
- photoconductive
- photoconductive layer
- image converter
- electrodes
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000000463 material Substances 0.000 description 29
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 14
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000004298 light response Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- -1 isocyanate compound Chemical class 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical group C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58219881A JPS60111461A (ja) | 1983-11-22 | 1983-11-22 | 画像読取素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3442367A1 DE3442367A1 (de) | 1985-05-30 |
| DE3442367C2 true DE3442367C2 (e) | 1990-02-08 |
Family
ID=16742515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843442367 Granted DE3442367A1 (de) | 1983-11-22 | 1984-11-20 | Bildwandlerelement |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4650985A (e) |
| JP (1) | JPS60111461A (e) |
| DE (1) | DE3442367A1 (e) |
| GB (1) | GB2150351B (e) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3603265A1 (de) * | 1985-02-06 | 1986-08-07 | Sharp K.K., Osaka | Herstellung eines photoelektrischen konversionsfilms und bild-sensor vom kontakt-typ |
| JPS6235564A (ja) * | 1985-08-08 | 1987-02-16 | Sharp Corp | 光電変換素子の作製方法 |
| DE3825704A1 (de) * | 1988-07-28 | 1990-02-01 | Siemens Ag | Roentgenstrahlenempfindlicher festkoerperbildwandler |
| JPH04334056A (ja) * | 1991-05-09 | 1992-11-20 | Toshiba Corp | 固体撮像装置の製造方法 |
| JP2002080903A (ja) * | 2000-09-08 | 2002-03-22 | Japan Science & Technology Corp | 分散安定化機能性金族微粒子及び半導体微粒子およびその製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE538610A (e) * | 1954-06-02 | |||
| NL267571A (e) * | 1959-05-29 | |||
| GB984371A (en) * | 1962-02-09 | 1965-02-24 | Derby Luminescents Ltd | Improvements in or relating to photoconductive materials |
| US3238150A (en) * | 1962-09-12 | 1966-03-01 | Xerox Corp | Photoconductive cadmium sulfide powder and method for the preparation thereof |
| US3315080A (en) * | 1962-11-20 | 1967-04-18 | Matsushita Electric Ind Co Ltd | Solid-state image intensifier with variable contrast ratio |
| DE1497144A1 (de) * | 1964-12-19 | 1969-06-04 | Fuji Photo Film Co Ltd | Verfahren zur Herstellung eines lichtempfindlichen Koerpers |
| GB1148537A (en) * | 1965-10-30 | 1969-04-16 | Fuji Photo Film Co Ltd | Improvements in and relating to photoconductive insulating material |
| JPS4813277B1 (e) * | 1968-02-02 | 1973-04-26 | ||
| GB1330486A (en) * | 1970-10-20 | 1973-09-19 | Matsushita Electric Ind Co Ltd | Production of photosensitive stannic oxide and devices |
| JPS52110577A (en) * | 1976-03-13 | 1977-09-16 | Konishiroku Photo Ind Co Ltd | Photoconductive material |
| JPS5349981A (en) * | 1976-10-18 | 1978-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric conversion element |
| US4405915A (en) * | 1980-03-28 | 1983-09-20 | Canon Kabushiki Kaisha | Photoelectric transducing element |
| JPS577981A (en) * | 1980-06-18 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS5729076A (en) * | 1980-07-28 | 1982-02-16 | Minolta Camera Co Ltd | Powder image transfer type electrophotographic copying method |
| JPS5846195B2 (ja) * | 1980-09-09 | 1983-10-14 | 日本電信電話株式会社 | 密着形イメ−ジセンサの製造方法 |
| JPS58207766A (ja) * | 1982-05-28 | 1983-12-03 | Fuji Xerox Co Ltd | イメ−ジセンサ |
-
1983
- 1983-11-22 JP JP58219881A patent/JPS60111461A/ja active Granted
-
1984
- 1984-11-13 US US06/670,869 patent/US4650985A/en not_active Expired - Fee Related
- 1984-11-20 DE DE19843442367 patent/DE3442367A1/de active Granted
- 1984-11-22 GB GB08429543A patent/GB2150351B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3442367A1 (de) | 1985-05-30 |
| GB8429543D0 (en) | 1985-01-03 |
| US4650985A (en) | 1987-03-17 |
| JPS60111461A (ja) | 1985-06-17 |
| GB2150351B (en) | 1987-11-25 |
| GB2150351A (en) | 1985-06-26 |
| JPH0458699B2 (e) | 1992-09-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |