DE3031759C2 - - Google Patents
Info
- Publication number
- DE3031759C2 DE3031759C2 DE3031759A DE3031759A DE3031759C2 DE 3031759 C2 DE3031759 C2 DE 3031759C2 DE 3031759 A DE3031759 A DE 3031759A DE 3031759 A DE3031759 A DE 3031759A DE 3031759 C2 DE3031759 C2 DE 3031759C2
- Authority
- DE
- Germany
- Prior art keywords
- light
- solid
- image recording
- recording device
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000003384 imaging method Methods 0.000 claims description 11
- 239000002952 polymeric resin Substances 0.000 claims description 10
- 229920003002 synthetic resin Polymers 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 239000011358 absorbing material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 24
- 108010010803 Gelatin Proteins 0.000 description 15
- 229920000159 gelatin Polymers 0.000 description 15
- 239000008273 gelatin Substances 0.000 description 15
- 235000019322 gelatine Nutrition 0.000 description 15
- 235000011852 gelatine desserts Nutrition 0.000 description 15
- 239000003086 colorant Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000000975 dye Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 108010025899 gelatin film Proteins 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000001045 blue dye Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000001044 red dye Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 description 1
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- SRUQARLMFOLRDN-UHFFFAOYSA-N 1-(2,4,5-Trihydroxyphenyl)-1-butanone Chemical compound CCCC(=O)C1=CC(O)=C(O)C=C1O SRUQARLMFOLRDN-UHFFFAOYSA-N 0.000 description 1
- 229910017000 As2Se3 Inorganic materials 0.000 description 1
- 241001248537 Eurema daira Species 0.000 description 1
- 102100039386 Ketimine reductase mu-crystallin Human genes 0.000 description 1
- 101000772180 Lithobates catesbeianus Transthyretin Proteins 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- MCPKSFINULVDNX-UHFFFAOYSA-N drometrizole Chemical compound CC1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 MCPKSFINULVDNX-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- MCPLVIGCWWTHFH-UHFFFAOYSA-L methyl blue Chemical compound [Na+].[Na+].C1=CC(S(=O)(=O)[O-])=CC=C1NC1=CC=C(C(=C2C=CC(C=C2)=[NH+]C=2C=CC(=CC=2)S([O-])(=O)=O)C=2C=CC(NC=3C=CC(=CC=3)S([O-])(=O)=O)=CC=2)C=C1 MCPLVIGCWWTHFH-UHFFFAOYSA-L 0.000 description 1
- AJDUTMFFZHIJEM-UHFFFAOYSA-N n-(9,10-dioxoanthracen-1-yl)-4-[4-[[4-[4-[(9,10-dioxoanthracen-1-yl)carbamoyl]phenyl]phenyl]diazenyl]phenyl]benzamide Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2NC(=O)C(C=C1)=CC=C1C(C=C1)=CC=C1N=NC(C=C1)=CC=C1C(C=C1)=CC=C1C(=O)NC1=CC=CC2=C1C(=O)C1=CC=CC=C1C2=O AJDUTMFFZHIJEM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052959 stibnite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000001043 yellow dye Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14667—Colour imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10726279A JPS5631287A (en) | 1979-08-24 | 1979-08-24 | Color solid image pickup element and its production |
| JP12684479A JPS5651183A (en) | 1979-10-03 | 1979-10-03 | Color solid image pickup element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3031759A1 DE3031759A1 (de) | 1981-03-26 |
| DE3031759C2 true DE3031759C2 (e) | 1989-06-29 |
Family
ID=26447304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803031759 Granted DE3031759A1 (de) | 1979-08-24 | 1980-08-22 | Festkoerper-bildaufnahmevorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4412236A (e) |
| DE (1) | DE3031759A1 (e) |
| NL (1) | NL8004768A (e) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10025363A1 (de) * | 2000-05-23 | 2001-12-20 | Fraunhofer Ges Forschung | Bildsensorelement und Bildsensor |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5772370A (en) * | 1980-10-23 | 1982-05-06 | Canon Inc | Photoelectric converter |
| NL8105071A (nl) * | 1981-11-10 | 1983-06-01 | Philips Nv | Kleurenbeeldopneeminrichting. |
| JPS58105672A (ja) * | 1981-12-17 | 1983-06-23 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
| JPS58168017A (ja) * | 1982-03-29 | 1983-10-04 | Mitsubishi Electric Corp | 固体撮像素子 |
| JPS5980964A (ja) * | 1982-11-01 | 1984-05-10 | Toshiba Corp | 光電変換素子 |
| US4533940A (en) * | 1983-06-13 | 1985-08-06 | Chappell Barbara A | High spatial resolution energy discriminator |
| JPS6033506A (ja) * | 1983-08-04 | 1985-02-20 | Seiko Instr & Electronics Ltd | カラ−固体撮像素子の製造方法 |
| US4581625A (en) * | 1983-12-19 | 1986-04-08 | Atlantic Richfield Company | Vertically integrated solid state color imager |
| US5020118A (en) * | 1984-06-13 | 1991-05-28 | Canon Kabushiki Kaisha | Image reading apparatus |
| JPS6157181A (ja) * | 1984-08-28 | 1986-03-24 | Sharp Corp | 固体撮像装置 |
| US4941029A (en) * | 1985-02-27 | 1990-07-10 | Westinghouse Electric Corp. | High resistance optical shield for visible sensors |
| JPS61292960A (ja) * | 1985-06-21 | 1986-12-23 | Toshiba Corp | 固体撮像装置 |
| DE3617229C2 (de) * | 1986-05-22 | 1997-04-30 | Aeg Infrarot Module Gmbh | Strahlungsdetektor |
| US4718557A (en) * | 1987-04-03 | 1988-01-12 | Ivy Hill Corporation | Easy opening, reclosable carton |
| JPH05183141A (ja) * | 1991-07-12 | 1993-07-23 | Fuji Xerox Co Ltd | カラーイメージセンサ |
| US5798542A (en) * | 1996-10-08 | 1998-08-25 | Eastman Kodak Company | Image sensor having ITO electrodes with overlapping color filters for increased sensitivity |
| US6376868B1 (en) | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
| US7071980B2 (en) * | 2000-07-27 | 2006-07-04 | Canon Kabushiki Kaisha | Image sensing apparatus |
| JP4505982B2 (ja) * | 2000-11-30 | 2010-07-21 | 三菱電機株式会社 | 光ヘッド装置、記録及び／又は再生装置並びに記録及び／又は再生方法 |
| KR100485892B1 (ko) * | 2002-11-14 | 2005-04-29 | 매그나칩 반도체 유한회사 | 시모스 이미지센서 및 그 제조방법 |
| WO2008093834A1 (ja) * | 2007-02-02 | 2008-08-07 | Rohm Co., Ltd. | 固体撮像装置およびその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969751A (en) * | 1974-12-18 | 1976-07-13 | Rca Corporation | Light shield for a semiconductor device comprising blackened photoresist |
| US4001878A (en) * | 1975-11-19 | 1977-01-04 | Rca Corporation | Charge transfer color imagers |
| US4078243A (en) * | 1975-12-12 | 1978-03-07 | International Business Machines Corporation | Phototransistor array having uniform current response and method of manufacture |
| GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
| JPS5839386B2 (ja) * | 1978-02-22 | 1983-08-30 | 株式会社東芝 | 電荷転送形イメ−ジセンサ |
| FR2433868A1 (fr) * | 1978-08-17 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
| FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
| US4354104A (en) * | 1980-05-06 | 1982-10-12 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup device |
-
1980
- 1980-08-21 US US06/180,042 patent/US4412236A/en not_active Expired - Lifetime
- 1980-08-22 NL NL8004768A patent/NL8004768A/nl not_active Application Discontinuation
- 1980-08-22 DE DE19803031759 patent/DE3031759A1/de active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10025363A1 (de) * | 2000-05-23 | 2001-12-20 | Fraunhofer Ges Forschung | Bildsensorelement und Bildsensor |
Also Published As
| Publication number | Publication date |
|---|---|
| US4412236A (en) | 1983-10-25 |
| DE3031759A1 (de) | 1981-03-26 |
| NL8004768A (nl) | 1981-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3031759C2 (e) | ||
| DE3689409T2 (de) | Verfahren zum Betreiben eines Festkörperbildsensors. | |
| DE2741226C3 (de) | Festkörper-Farbbildaufnahmeeinrichtung | |
| DE19815899C2 (de) | Festkörper-Farb-Abbildungsvorrichtung | |
| DE3227826C2 (e) | ||
| DE60131215T2 (de) | Bildsensorpixellayout zur reduzierung von feststehenden störstrukturen | |
| DE10230134B4 (de) | Bildsensor und Verfahren zu dessen Herstellung | |
| DE3503048C2 (e) | ||
| DE2736878C2 (de) | Photoelektrisches Element fpr eine monolithische Bildaufnahmeeinrichtung | |
| DE2802987A1 (de) | Festkoerper-abbildungsvorrichtung | |
| DE2727156C2 (e) | ||
| DE2636927C1 (de) | Halbleiteranordnung mit wenigstens einem Detektorelement | |
| DE3006919A1 (de) | Festkoerper-farbbildwandler und verfahren zu seiner herstellung | |
| DE19648063B4 (de) | Verfahren zum Herstellen einer Mikrolinse eines Halbleiterbauteils | |
| DE3638018A1 (de) | Fotodiode, hieraus gebildete fotodioden-anordnung, sowie verfahren zur herstellung einer fotodiode | |
| DE2358672A1 (de) | Halbleiter-anordnung zur abbildung eines bestimmten gebietes und verfahren zur herstellung einer solchen anordnung | |
| DE3005766A1 (de) | Festkoerper-abbildungsanordnung | |
| DE2804466C3 (de) | Festkörper-Bildaufnahmeeinrichtung | |
| DE3784991T2 (de) | Schaltkreis für ein photoempfindliches Pixel mit einem belichteten Blockierglied. | |
| DE3500645A1 (de) | Fotosensoranordnung | |
| DE3407038C2 (de) | Halbleiter-Photodetektor und Verfahren zu dessen Betrieb | |
| DE2915859C2 (de) | Fotoelektrische Wandlereinrichtung | |
| DE3751097T2 (de) | Festkörperabbildungsgerät. | |
| DE60127335T2 (de) | Vorrichtung und Verfahren zum Schutz integrierter Ladungsspeicherelemente vor photoinduzierten Strömen | |
| DE2930180A1 (de) | Photoelektrische informationseingabeeinrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8128 | New person/name/address of the agent |
Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |