DE3402188C2 - - Google Patents

Info

Publication number
DE3402188C2
DE3402188C2 DE3402188A DE3402188A DE3402188C2 DE 3402188 C2 DE3402188 C2 DE 3402188C2 DE 3402188 A DE3402188 A DE 3402188A DE 3402188 A DE3402188 A DE 3402188A DE 3402188 C2 DE3402188 C2 DE 3402188C2
Authority
DE
Germany
Prior art keywords
carried out
deposition
layer
doped
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3402188A
Other languages
German (de)
English (en)
Other versions
DE3402188A1 (de
Inventor
Hans-Christian Dr.Rer.Nat. 8034 Germering De Schaber
Frank Stefan Dr.Rer.Nat. Becker
Heinrich Josef Dipl.-Phys. 8000 Muenchen De Eichermueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19843402188 priority Critical patent/DE3402188A1/de
Publication of DE3402188A1 publication Critical patent/DE3402188A1/de
Application granted granted Critical
Publication of DE3402188C2 publication Critical patent/DE3402188C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
DE19843402188 1984-01-23 1984-01-23 Verfahren zum herstellen von bor-dotierten polykristallinen siliziumschichten fuer bipolartransistorschaltungen Granted DE3402188A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19843402188 DE3402188A1 (de) 1984-01-23 1984-01-23 Verfahren zum herstellen von bor-dotierten polykristallinen siliziumschichten fuer bipolartransistorschaltungen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19843402188 DE3402188A1 (de) 1984-01-23 1984-01-23 Verfahren zum herstellen von bor-dotierten polykristallinen siliziumschichten fuer bipolartransistorschaltungen

Publications (2)

Publication Number Publication Date
DE3402188A1 DE3402188A1 (de) 1985-07-25
DE3402188C2 true DE3402188C2 (https=) 1989-10-12

Family

ID=6225657

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843402188 Granted DE3402188A1 (de) 1984-01-23 1984-01-23 Verfahren zum herstellen von bor-dotierten polykristallinen siliziumschichten fuer bipolartransistorschaltungen

Country Status (1)

Country Link
DE (1) DE3402188A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755476A (en) * 1985-12-17 1988-07-05 Siemens Aktiengesellschaft Process for the production of self-adjusted bipolar transistor structures having a reduced extrinsic base resistance
DE3817882A1 (de) * 1988-05-26 1989-12-07 Siemens Ag Bipolartransistorstruktur mit reduziertem basiswiderstand und verfahren zur herstellung eines basisanschlussbereiches fuer die bipolartransistorstruktur
DE4309898B4 (de) * 1992-03-30 2005-11-03 Rohm Co. Ltd. Verfahren zur Herstellung eines Bipolartransistors mit einer Polysiliziumschicht zwischen einem Halbleiterbereich und einem Oberflächenelektrodenmetall
RU2170474C2 (ru) * 1998-11-23 2001-07-10 АООТ "НИИ молекулярной электроники и завод "Микрон" Способ изготовления резисторов в интегральных схемах

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3041756A1 (de) * 1980-11-05 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Drucksensor

Also Published As

Publication number Publication date
DE3402188A1 (de) 1985-07-25

Similar Documents

Publication Publication Date Title
DE69522370T2 (de) SiGe-Dünnfilm-Halbleiteranordnung mit SiGe Schichtstruktur und Verfahren zur Herstellung
DE3231987C2 (de) Verfahren zur Herstellung einer Cobaltsilicidschicht in einem Halbleiterbauelement
EP0036634B1 (de) Verfahren zur Herstellung einer bipolaren Transistorstruktur
DE3688758T2 (de) Dünnfilmtransistor auf isolierendem Substrat.
DE3886074T2 (de) Herstellung einer Halbleiterstruktur.
DE3587231T2 (de) Verfahren zum herstellen einer dmos-halbleiteranordnung.
EP0123309B1 (de) Verfahren zum Herstellen von stabilen, niederohmigen Kontakten in integrierten Halbleiterschaltungen
DE3211761A1 (de) Verfahren zum herstellen von integrierten mos-feldeffekttransistorschaltungen in siliziumgate-technologie mit silizid beschichteten diffusionsgebieten als niederohmige leiterbahnen
EP0226890B1 (de) Verfahren zum Herstellen von selbstjustierten Bipolar-Transistorstruksturen mit reduziertem Basisbahnwiderstand
DE2618445A1 (de) Verfahren zum herstellen einer halbleitervorrichtung
DE69734456T2 (de) Ein stabilisierter polysiliziumwiderstand und seine herstellungsmethode
DE4420052A1 (de) Verfahren zur Herstellung eines Gates in einer Halbleitereinrichtung
DE3138544C2 (de) Halbleiterbauelement
DE4313042C2 (de) Diamantschichten mit hitzebeständigen Ohmschen Elektroden und Herstellungsverfahren dafür
DE4244115C2 (de) Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung
DE3402188C2 (https=)
EP0467081A2 (de) Verfahren zur Herstellung eines Bipolartransistors
DE3540452C2 (de) Verfahren zur Herstellung eines Dünnschichttransistors
DE3131875A1 (de) "verfahren zum herstellen einer halbleiterstruktur und halbleiterstruktur"
DE1802849B2 (de) Verfahren zum herstellen einer monolithischen schaltung
DE3853313T2 (de) Integrierter Transistor und sein Herstellungsverfahren.
DE2801680A1 (de) Verfahren zur herstellung einer halbleitereinrichtung
DE2250570A1 (de) Verfahren zum herstellen von halbleiterbauteilen, die polykristallines silizium aufweisen
DE3504184C2 (https=)
DE69214792T2 (de) Integrierte Schaltung mit Siliziumkontakt zu einem Silizid

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition