DE3311835A1 - Fotoleitfaehiges aufzeichnungselement - Google Patents
Fotoleitfaehiges aufzeichnungselementInfo
- Publication number
- DE3311835A1 DE3311835A1 DE19833311835 DE3311835A DE3311835A1 DE 3311835 A1 DE3311835 A1 DE 3311835A1 DE 19833311835 DE19833311835 DE 19833311835 DE 3311835 A DE3311835 A DE 3311835A DE 3311835 A1 DE3311835 A1 DE 3311835A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- recording element
- element according
- sih4
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 184
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 230000001747 exhibiting effect Effects 0.000 claims abstract description 3
- 125000004429 atom Chemical group 0.000 claims description 94
- 239000000126 substance Substances 0.000 claims description 80
- 238000009826 distribution Methods 0.000 claims description 48
- 125000004432 carbon atom Chemical group C* 0.000 claims description 47
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 47
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 43
- 125000005843 halogen group Chemical group 0.000 claims description 42
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 230000001105 regulatory effect Effects 0.000 claims description 28
- 230000033228 biological regulation Effects 0.000 claims description 20
- 230000000737 periodic effect Effects 0.000 claims description 18
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 229910052736 halogen Inorganic materials 0.000 claims description 10
- 150000002367 halogens Chemical class 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1040
- 229910052986 germanium hydride Inorganic materials 0.000 description 586
- 239000007789 gas Substances 0.000 description 584
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 584
- 238000003384 imaging method Methods 0.000 description 496
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 308
- 230000015572 biosynthetic process Effects 0.000 description 235
- 238000000034 method Methods 0.000 description 232
- 229910004014 SiF4 Inorganic materials 0.000 description 165
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 165
- 238000004519 manufacturing process Methods 0.000 description 137
- 239000007858 starting material Substances 0.000 description 76
- 230000008859 change Effects 0.000 description 70
- 238000012360 testing method Methods 0.000 description 64
- 238000011156 evaluation Methods 0.000 description 57
- 239000010408 film Substances 0.000 description 57
- 229910052721 tungsten Inorganic materials 0.000 description 56
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 55
- 239000010937 tungsten Substances 0.000 description 55
- 229910007264 Si2H6 Inorganic materials 0.000 description 40
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 40
- 230000008569 process Effects 0.000 description 40
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical class P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 35
- YFCIFWOJYYFDQP-PTWZRHHISA-N 4-[3-amino-6-[(1S,3S,4S)-3-fluoro-4-hydroxycyclohexyl]pyrazin-2-yl]-N-[(1S)-1-(3-bromo-5-fluorophenyl)-2-(methylamino)ethyl]-2-fluorobenzamide Chemical compound CNC[C@@H](NC(=O)c1ccc(cc1F)-c1nc(cnc1N)[C@H]1CC[C@H](O)[C@@H](F)C1)c1cc(F)cc(Br)c1 YFCIFWOJYYFDQP-PTWZRHHISA-N 0.000 description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 33
- 229910002804 graphite Inorganic materials 0.000 description 33
- 239000010439 graphite Substances 0.000 description 33
- WNEODWDFDXWOLU-QHCPKHFHSA-N 3-[3-(hydroxymethyl)-4-[1-methyl-5-[[5-[(2s)-2-methyl-4-(oxetan-3-yl)piperazin-1-yl]pyridin-2-yl]amino]-6-oxopyridin-3-yl]pyridin-2-yl]-7,7-dimethyl-1,2,6,8-tetrahydrocyclopenta[3,4]pyrrolo[3,5-b]pyrazin-4-one Chemical compound C([C@@H](N(CC1)C=2C=NC(NC=3C(N(C)C=C(C=3)C=3C(=C(N4C(C5=CC=6CC(C)(C)CC=6N5CC4)=O)N=CC=3)CO)=O)=CC=2)C)N1C1COC1 WNEODWDFDXWOLU-QHCPKHFHSA-N 0.000 description 27
- 230000007547 defect Effects 0.000 description 25
- -1 halogenated Inorganic materials 0.000 description 23
- 238000011161 development Methods 0.000 description 22
- 239000000203 mixture Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 22
- KVCQTKNUUQOELD-UHFFFAOYSA-N 4-amino-n-[1-(3-chloro-2-fluoroanilino)-6-methylisoquinolin-5-yl]thieno[3,2-d]pyrimidine-7-carboxamide Chemical compound N=1C=CC2=C(NC(=O)C=3C4=NC=NC(N)=C4SC=3)C(C)=CC=C2C=1NC1=CC=CC(Cl)=C1F KVCQTKNUUQOELD-UHFFFAOYSA-N 0.000 description 21
- 238000010276 construction Methods 0.000 description 21
- 238000000151 deposition Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 19
- 238000000889 atomisation Methods 0.000 description 19
- 238000000746 purification Methods 0.000 description 19
- 229910052799 carbon Inorganic materials 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000008186 active pharmaceutical agent Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 229920001971 elastomer Polymers 0.000 description 8
- 206010034972 Photosensitivity reaction Diseases 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 230000036211 photosensitivity Effects 0.000 description 7
- 150000004756 silanes Chemical class 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 238000007865 diluting Methods 0.000 description 6
- 238000007733 ion plating Methods 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 150000002366 halogen compounds Chemical class 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 150000003377 silicon compounds Chemical class 0.000 description 5
- 101100048447 Caenorhabditis elegans unc-4 gene Proteins 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000013517 stratification Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000007630 basic procedure Methods 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- WFPZPJSADLPSON-UHFFFAOYSA-N dinitrogen tetraoxide Chemical compound [O-][N+](=O)[N+]([O-])=O WFPZPJSADLPSON-UHFFFAOYSA-N 0.000 description 3
- 208000002173 dizziness Diseases 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 210000003608 fece Anatomy 0.000 description 3
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 208000013469 light sensitivity Diseases 0.000 description 3
- 239000010871 livestock manure Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052990 silicon hydride Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- MWRNXFLKMVJUFL-UHFFFAOYSA-N $l^{2}-germane Chemical class [GeH2] MWRNXFLKMVJUFL-UHFFFAOYSA-N 0.000 description 2
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910014263 BrF3 Inorganic materials 0.000 description 2
- 229910014271 BrF5 Inorganic materials 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- 229910006149 GeI4 Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 102220520998 N-chimaerin_D12A_mutation Human genes 0.000 description 2
- 102220520987 N-chimaerin_D13A_mutation Human genes 0.000 description 2
- 240000002834 Paulownia tomentosa Species 0.000 description 2
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 229910007260 Si2F6 Inorganic materials 0.000 description 2
- 229910005096 Si3H8 Inorganic materials 0.000 description 2
- 229910003676 SiBr4 Inorganic materials 0.000 description 2
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 2
- 229910003816 SiH2F2 Inorganic materials 0.000 description 2
- 229910003826 SiH3Cl Inorganic materials 0.000 description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 150000001343 alkyl silanes Chemical class 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- XHVUVQAANZKEKF-UHFFFAOYSA-N bromine pentafluoride Chemical compound FBr(F)(F)(F)F XHVUVQAANZKEKF-UHFFFAOYSA-N 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- KBDJQNUZLNUGDS-UHFFFAOYSA-N dibromosilicon Chemical compound Br[Si]Br KBDJQNUZLNUGDS-UHFFFAOYSA-N 0.000 description 2
- MGNHOGAVECORPT-UHFFFAOYSA-N difluorosilicon Chemical compound F[Si]F MGNHOGAVECORPT-UHFFFAOYSA-N 0.000 description 2
- LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Inorganic materials [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- AHVNUGPIPKMDBB-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge].[Ge] AHVNUGPIPKMDBB-UHFFFAOYSA-N 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 102220224003 rs748471297 Human genes 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 description 2
- SDNBGJALFMSQER-UHFFFAOYSA-N trifluoro(trifluorosilyl)silane Chemical compound F[Si](F)(F)[Si](F)(F)F SDNBGJALFMSQER-UHFFFAOYSA-N 0.000 description 2
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VCGRFBXVSFAGGA-UHFFFAOYSA-N (1,1-dioxo-1,4-thiazinan-4-yl)-[6-[[3-(4-fluorophenyl)-5-methyl-1,2-oxazol-4-yl]methoxy]pyridin-3-yl]methanone Chemical compound CC=1ON=C(C=2C=CC(F)=CC=2)C=1COC(N=C1)=CC=C1C(=O)N1CCS(=O)(=O)CC1 VCGRFBXVSFAGGA-UHFFFAOYSA-N 0.000 description 1
- MAYZWDRUFKUGGP-VIFPVBQESA-N (3s)-1-[5-tert-butyl-3-[(1-methyltetrazol-5-yl)methyl]triazolo[4,5-d]pyrimidin-7-yl]pyrrolidin-3-ol Chemical compound CN1N=NN=C1CN1C2=NC(C(C)(C)C)=NC(N3C[C@@H](O)CC3)=C2N=N1 MAYZWDRUFKUGGP-VIFPVBQESA-N 0.000 description 1
- ZGYIXVSQHOKQRZ-COIATFDQSA-N (e)-n-[4-[3-chloro-4-(pyridin-2-ylmethoxy)anilino]-3-cyano-7-[(3s)-oxolan-3-yl]oxyquinolin-6-yl]-4-(dimethylamino)but-2-enamide Chemical compound N#CC1=CN=C2C=C(O[C@@H]3COCC3)C(NC(=O)/C=C/CN(C)C)=CC2=C1NC(C=C1Cl)=CC=C1OCC1=CC=CC=N1 ZGYIXVSQHOKQRZ-COIATFDQSA-N 0.000 description 1
- MOWXJLUYGFNTAL-DEOSSOPVSA-N (s)-[2-chloro-4-fluoro-5-(7-morpholin-4-ylquinazolin-4-yl)phenyl]-(6-methoxypyridazin-3-yl)methanol Chemical compound N1=NC(OC)=CC=C1[C@@H](O)C1=CC(C=2C3=CC=C(C=C3N=CN=2)N2CCOCC2)=C(F)C=C1Cl MOWXJLUYGFNTAL-DEOSSOPVSA-N 0.000 description 1
- APWRZPQBPCAXFP-UHFFFAOYSA-N 1-(1-oxo-2H-isoquinolin-5-yl)-5-(trifluoromethyl)-N-[2-(trifluoromethyl)pyridin-4-yl]pyrazole-4-carboxamide Chemical compound O=C1NC=CC2=C(C=CC=C12)N1N=CC(=C1C(F)(F)F)C(=O)NC1=CC(=NC=C1)C(F)(F)F APWRZPQBPCAXFP-UHFFFAOYSA-N 0.000 description 1
- ABDDQTDRAHXHOC-QMMMGPOBSA-N 1-[(7s)-5,7-dihydro-4h-thieno[2,3-c]pyran-7-yl]-n-methylmethanamine Chemical compound CNC[C@@H]1OCCC2=C1SC=C2 ABDDQTDRAHXHOC-QMMMGPOBSA-N 0.000 description 1
- LHASZEBEQGPCFM-CJFMBICVSA-N 2-amino-4-[(1r)-1-[[(6r)-6-[(5-chloro-2-methoxyphenyl)methyl]-7-oxo-3-(phenoxyamino)-5,6-dihydro-2h-1,4-diazepine-1-carbonyl]amino]propyl]benzoic acid Chemical compound C([C@@H]1CNC(CN(C1=O)C(=O)N[C@H](CC)C=1C=C(N)C(C(O)=O)=CC=1)=NOC=1C=CC=CC=1)C1=CC(Cl)=CC=C1OC LHASZEBEQGPCFM-CJFMBICVSA-N 0.000 description 1
- HCDMJFOHIXMBOV-UHFFFAOYSA-N 3-(2,6-difluoro-3,5-dimethoxyphenyl)-1-ethyl-8-(morpholin-4-ylmethyl)-4,7-dihydropyrrolo[4,5]pyrido[1,2-d]pyrimidin-2-one Chemical compound C=1C2=C3N(CC)C(=O)N(C=4C(=C(OC)C=C(OC)C=4F)F)CC3=CN=C2NC=1CN1CCOCC1 HCDMJFOHIXMBOV-UHFFFAOYSA-N 0.000 description 1
- BYHQTRFJOGIQAO-GOSISDBHSA-N 3-(4-bromophenyl)-8-[(2R)-2-hydroxypropyl]-1-[(3-methoxyphenyl)methyl]-1,3,8-triazaspiro[4.5]decan-2-one Chemical compound C[C@H](CN1CCC2(CC1)CN(C(=O)N2CC3=CC(=CC=C3)OC)C4=CC=C(C=C4)Br)O BYHQTRFJOGIQAO-GOSISDBHSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- IRPVABHDSJVBNZ-RTHVDDQRSA-N 5-[1-(cyclopropylmethyl)-5-[(1R,5S)-3-(oxetan-3-yl)-3-azabicyclo[3.1.0]hexan-6-yl]pyrazol-3-yl]-3-(trifluoromethyl)pyridin-2-amine Chemical compound C1=C(C(F)(F)F)C(N)=NC=C1C1=NN(CC2CC2)C(C2[C@@H]3CN(C[C@@H]32)C2COC2)=C1 IRPVABHDSJVBNZ-RTHVDDQRSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
- G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (16)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57053612A JPS58171051A (ja) | 1982-03-31 | 1982-03-31 | 電子写真用光導電部材 |
| JP57053605A JPS58171044A (ja) | 1982-03-31 | 1982-03-31 | レーザー光用の光導電部材 |
| JP57053600A JPS58171039A (ja) | 1982-03-31 | 1982-03-31 | 光導電部材 |
| JP57053607A JPS58171046A (ja) | 1982-03-31 | 1982-03-31 | 光導電部材 |
| JP57053604A JPS58171043A (ja) | 1982-03-31 | 1982-03-31 | 光導電部材 |
| JP57053601A JPS58171040A (ja) | 1982-03-31 | 1982-03-31 | レーザー光用の光導電部材 |
| JP57053608A JPS58171047A (ja) | 1982-03-31 | 1982-03-31 | 電子写真用光導電部材 |
| JP57053611A JPS58171050A (ja) | 1982-03-31 | 1982-03-31 | 光導電部材 |
| JP57070771A JPS58187933A (ja) | 1982-04-27 | 1982-04-27 | 光導電部材 |
| JP7077482A JPS58187936A (ja) | 1982-04-27 | 1982-04-27 | 光導電部材 |
| JP7077682A JPS58187938A (ja) | 1982-04-27 | 1982-04-27 | 電子写真用光導電部材 |
| JP57071951A JPS58187940A (ja) | 1982-04-28 | 1982-04-28 | 電子写真用光導電部材 |
| JP57071953A JPS58187942A (ja) | 1982-04-28 | 1982-04-28 | 光導電部材 |
| JP57071954A JPS58187943A (ja) | 1982-04-28 | 1982-04-28 | 光導電部材 |
| JP57071956A JPS58187945A (ja) | 1982-04-28 | 1982-04-28 | 電子写真用光導電部材 |
| JP57073025A JPS58190954A (ja) | 1982-04-30 | 1982-04-30 | レーザー光を用いる光導電部材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3311835A1 true DE3311835A1 (de) | 1983-10-13 |
| DE3311835C2 DE3311835C2 (enrdf_load_stackoverflow) | 1988-10-27 |
Family
ID=27585698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833311835 Granted DE3311835A1 (de) | 1982-03-31 | 1983-03-31 | Fotoleitfaehiges aufzeichnungselement |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE3311835A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2524661B1 (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3440336A1 (de) * | 1983-11-04 | 1985-05-15 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3447687A1 (de) * | 1983-12-29 | 1985-07-11 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3447671A1 (de) * | 1983-12-29 | 1985-07-11 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3439147A1 (de) * | 1983-10-25 | 1985-07-18 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| EP0160369A3 (en) * | 1984-03-12 | 1986-02-12 | Canon Kabushiki Kaisha | Light receiving member |
| EP0235966A1 (en) * | 1986-02-07 | 1987-09-09 | Canon Kabushiki Kaisha | Light receiving member |
| EP0236093A1 (en) * | 1986-03-03 | 1987-09-09 | Canon Kabushiki Kaisha | Light receiving member for use in electrophotography |
| EP0237173A1 (en) * | 1986-02-07 | 1987-09-16 | Canon Kabushiki Kaisha | Light receiving member |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0165743B1 (en) * | 1984-06-05 | 1990-12-19 | Canon Kabushiki Kaisha | Light-receiving member |
| US4678733A (en) * | 1984-10-15 | 1987-07-07 | Canon Kabushiki Kaisha | Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces |
| DE3681655D1 (en) * | 1985-08-03 | 1991-10-31 | Matsushita Electric Ind Co Ltd | Elektrophotographischer photorezeptor. |
| AU596374B2 (en) * | 1985-09-25 | 1990-05-03 | Canon Kabushiki Kaisha | Light receiving members |
| JPS6289064A (ja) * | 1985-10-16 | 1987-04-23 | Canon Inc | 光受容部材 |
| JPS6290663A (ja) * | 1985-10-17 | 1987-04-25 | Canon Inc | 光受容部材 |
| US4834501A (en) * | 1985-10-28 | 1989-05-30 | Canon Kabushiki Kaisha | Light receiving member having a light receiving layer of a-Si(Ge,Sn)(H,X) and a-Si(H,X) layers on a support having spherical dimples with inside faces having minute irregularities |
| JPS62106468A (ja) * | 1985-11-01 | 1987-05-16 | Canon Inc | 光受容部材 |
| JPS62106470A (ja) * | 1985-11-02 | 1987-05-16 | Canon Inc | 光受容部材 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0045204A2 (en) * | 1980-07-28 | 1982-02-03 | Hitachi, Ltd. | Electrophotographic member and electrophotographic apparatus including the member |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56121041A (en) * | 1980-02-27 | 1981-09-22 | Fuji Photo Film Co Ltd | Electrophotographic receptor and its manufacture |
| JPS574172A (en) * | 1980-06-09 | 1982-01-09 | Canon Inc | Light conductive member |
-
1983
- 1983-03-31 DE DE19833311835 patent/DE3311835A1/de active Granted
- 1983-03-31 FR FR8305341A patent/FR2524661B1/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0045204A2 (en) * | 1980-07-28 | 1982-02-03 | Hitachi, Ltd. | Electrophotographic member and electrophotographic apparatus including the member |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3439147A1 (de) * | 1983-10-25 | 1985-07-18 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3440336A1 (de) * | 1983-11-04 | 1985-05-15 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3447687A1 (de) * | 1983-12-29 | 1985-07-11 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| DE3447671A1 (de) * | 1983-12-29 | 1985-07-11 | Canon K.K., Tokio/Tokyo | Fotoleitfaehiges aufzeichnungsmaterial |
| EP0160369A3 (en) * | 1984-03-12 | 1986-02-12 | Canon Kabushiki Kaisha | Light receiving member |
| EP0235966A1 (en) * | 1986-02-07 | 1987-09-09 | Canon Kabushiki Kaisha | Light receiving member |
| EP0237173A1 (en) * | 1986-02-07 | 1987-09-16 | Canon Kabushiki Kaisha | Light receiving member |
| EP0236093A1 (en) * | 1986-03-03 | 1987-09-09 | Canon Kabushiki Kaisha | Light receiving member for use in electrophotography |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3311835C2 (enrdf_load_stackoverflow) | 1988-10-27 |
| FR2524661B1 (fr) | 1987-04-17 |
| FR2524661A1 (fr) | 1983-10-07 |
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| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
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