JPS56121041A - Electrophotographic receptor and its manufacture - Google Patents
Electrophotographic receptor and its manufactureInfo
- Publication number
- JPS56121041A JPS56121041A JP2351780A JP2351780A JPS56121041A JP S56121041 A JPS56121041 A JP S56121041A JP 2351780 A JP2351780 A JP 2351780A JP 2351780 A JP2351780 A JP 2351780A JP S56121041 A JPS56121041 A JP S56121041A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- derivatives
- base
- layer
- photoconductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To obtain superior performance by decomposing a gas containing silane or its derivatives, or germane or its derivatives, carbon, and fluorine in vacuo by electric discharge to form an amorphous photoconductive layer consisting chiefly of Si, Ge, C or Ge, C and containing H and F. CONSTITUTION:Amorphous hotoconductive layer 204 having a component proportion represented by the shown formula in which x=0-0.9, y=0.05-0.95, 1- x-y=0-0.95, and Z=0.6-0.9, is formed on a conductive substrate having conductive layer 203 on support 202 to prepare electrophotographic receptor 200. In this preparation process, vacuum vessel 123 is kept vacuum, base 103 is held at a given temperature, high frequency power is applied to glow discharge electrode 101, and SiH4; CF4; PH3; B2H6; and GeH4 are fed from each gas cylinders 116, 117, 118, 119, 127 to vessel 123 at each given flow rate to form the amorphous photoconductive layer represented by said formula on base 103, thus permitting a photoreceptor high in thermal and chemical stability, mechanical strength, photoconductivity, resistance to light fatigue, etc. to be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2351780A JPS56121041A (en) | 1980-02-27 | 1980-02-27 | Electrophotographic receptor and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2351780A JPS56121041A (en) | 1980-02-27 | 1980-02-27 | Electrophotographic receptor and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56121041A true JPS56121041A (en) | 1981-09-22 |
Family
ID=12112634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2351780A Pending JPS56121041A (en) | 1980-02-27 | 1980-02-27 | Electrophotographic receptor and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56121041A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524661A1 (en) * | 1982-03-31 | 1983-10-07 | Canon Kk | Photoconductive registration element - comprising carrier with amorphous layer with first silicon and germanium contg. zone and second photoconductive silicon contg. zone |
JPS58171042A (en) * | 1982-03-31 | 1983-10-07 | Canon Inc | Photoconductive material |
JPS58171038A (en) * | 1982-03-31 | 1983-10-07 | Canon Inc | Photoconductive material |
JPS58171044A (en) * | 1982-03-31 | 1983-10-07 | Canon Inc | Photoconductive material |
JPS58187941A (en) * | 1982-04-28 | 1983-11-02 | Canon Inc | Photoconductive member |
JPS58187932A (en) * | 1982-04-27 | 1983-11-02 | Canon Inc | Photoconductive member |
JPS6254273A (en) * | 1985-09-03 | 1987-03-09 | Ricoh Co Ltd | Electrophotographic sensitive body |
WO1987005409A1 (en) * | 1986-03-07 | 1987-09-11 | A.S.M. - Sud Europe | Methods for applying simultaneously on a plurality of integrated circuit boards a film having a uniform thickness and consisting of arsenic or germanium selenide glass sensitized by a silver salt |
JPS6343156A (en) * | 1986-08-11 | 1988-02-24 | Stanley Electric Co Ltd | Electrophotographic sensitive body |
JPS63125943A (en) * | 1986-11-14 | 1988-05-30 | Kyocera Corp | Electrophotographic sensitive body |
JPH02181154A (en) * | 1989-01-04 | 1990-07-13 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
JPH0588390A (en) * | 1982-11-01 | 1993-04-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device for photosensitive body |
-
1980
- 1980-02-27 JP JP2351780A patent/JPS56121041A/en active Pending
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524661A1 (en) * | 1982-03-31 | 1983-10-07 | Canon Kk | Photoconductive registration element - comprising carrier with amorphous layer with first silicon and germanium contg. zone and second photoconductive silicon contg. zone |
JPS58171042A (en) * | 1982-03-31 | 1983-10-07 | Canon Inc | Photoconductive material |
JPS58171038A (en) * | 1982-03-31 | 1983-10-07 | Canon Inc | Photoconductive material |
JPS58171044A (en) * | 1982-03-31 | 1983-10-07 | Canon Inc | Photoconductive material |
JPH0450586B2 (en) * | 1982-03-31 | 1992-08-14 | Canon Kk | |
JPH0450583B2 (en) * | 1982-03-31 | 1992-08-14 | Canon Kk | |
JPH0450585B2 (en) * | 1982-03-31 | 1992-08-14 | Canon Kk | |
JPS58187932A (en) * | 1982-04-27 | 1983-11-02 | Canon Inc | Photoconductive member |
JPH0450587B2 (en) * | 1982-04-27 | 1992-08-14 | Canon Kk | |
JPH0450588B2 (en) * | 1982-04-28 | 1992-08-14 | Canon Kk | |
JPS58187941A (en) * | 1982-04-28 | 1983-11-02 | Canon Inc | Photoconductive member |
JPH0588390A (en) * | 1982-11-01 | 1993-04-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device for photosensitive body |
JPS6254273A (en) * | 1985-09-03 | 1987-03-09 | Ricoh Co Ltd | Electrophotographic sensitive body |
FR2595508A1 (en) * | 1986-03-07 | 1987-09-11 | Centre Nat Rech Scient | METHODS FOR SIMULTANEOUSLY APPLYING TO A PLURALITY OF PLATES OF INTEGRATED CIRCUITS A PHOTOSENSITIVE FILM OF A UNIFORM THICKNESS OF GLASS OF GERMANIUM SELENURE OR ARSENIC SENSITIZED BY A SALT OF SILVER |
WO1987005409A1 (en) * | 1986-03-07 | 1987-09-11 | A.S.M. - Sud Europe | Methods for applying simultaneously on a plurality of integrated circuit boards a film having a uniform thickness and consisting of arsenic or germanium selenide glass sensitized by a silver salt |
JPS6343156A (en) * | 1986-08-11 | 1988-02-24 | Stanley Electric Co Ltd | Electrophotographic sensitive body |
JPS63125943A (en) * | 1986-11-14 | 1988-05-30 | Kyocera Corp | Electrophotographic sensitive body |
JPH02181154A (en) * | 1989-01-04 | 1990-07-13 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4448801A (en) | Process for forming deposition film | |
JPS56121041A (en) | Electrophotographic receptor and its manufacture | |
CA1323528C (en) | Method for preparation of multi-layer structure film | |
JPS54145537A (en) | Preparation of electrophotographic image forming material | |
US4778692A (en) | Process for forming deposited film | |
GB2043042A (en) | Production of semiconductor bodies made of amorphous silicon | |
US4824697A (en) | Method for forming a multi-layer deposited film | |
US4631198A (en) | Method of manufacturing thin amorphous silicon film | |
US4853309A (en) | Photoreceptor for electrophotography with a-Si layers having a gradient concentration of doped atoms and sandwiching the photoconductive layer therebetween | |
US5098736A (en) | Method for preparing electrophotographic photoreceptor | |
JPS5683746A (en) | Electrophotographic image forming member | |
JPS5665142A (en) | Manufacture of electrophotographic receptor | |
JPS5664346A (en) | Electrophotographic receptor and its preparation | |
EP0140130B1 (en) | Process and apparatus for preparing semiconductor layer | |
EP1271252A3 (en) | Process and apparatus for manufacturing electrophotographic photosensitive member | |
JPS55127080A (en) | Photoconductive element | |
JPS61247020A (en) | Deposition film forming method | |
JP2598003B2 (en) | Method for forming functional deposited film by microwave plasma CVD method | |
JPS61196519A (en) | Deposition film forming method | |
JPS61194820A (en) | Deposited film forming method | |
JPH06275538A (en) | Formation of amorphous silicon alloy film | |
JPS57196261A (en) | Electrophotographic photoreceptor | |
JPS59161080A (en) | Photoelectric conversion element and manufacture thereof | |
JPS61198623A (en) | Formation of deposited film | |
JPS6199324A (en) | Formation of deposited film |