JPS57196261A - Electrophotographic photoreceptor - Google Patents

Electrophotographic photoreceptor

Info

Publication number
JPS57196261A
JPS57196261A JP8074381A JP8074381A JPS57196261A JP S57196261 A JPS57196261 A JP S57196261A JP 8074381 A JP8074381 A JP 8074381A JP 8074381 A JP8074381 A JP 8074381A JP S57196261 A JPS57196261 A JP S57196261A
Authority
JP
Japan
Prior art keywords
layer
reaction vessel
gas
gas bomb
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8074381A
Other languages
Japanese (ja)
Other versions
JPH0241743B2 (en
Inventor
Takeshi Matsuo
Yukio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8074381A priority Critical patent/JPS57196261A/en
Priority to US06/382,285 priority patent/US4560634A/en
Priority to DE8282104724T priority patent/DE3279006D1/en
Priority to EP82104724A priority patent/EP0066812B1/en
Publication of JPS57196261A publication Critical patent/JPS57196261A/en
Publication of JPH0241743B2 publication Critical patent/JPH0241743B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)

Abstract

PURPOSE:To enhance the spectral sensitivity and the durability, by vapor-depositing a photoconductive layer, where a specific quantity of doping materials is added to the essential component of microcrystalline silicon, on a conductive supporting material in vacuum and providing a protection layer on this photoconductive layer. CONSTITUTION:A drum base material 11 consisting of Al is put on a supporting table 12 in a reaction vessel 10, and a heater 17 and a work coil 9 are heated with a high frequency to make the inside of the reaction vessel vacuous. Compounding quantities of gaseous SiH4 in a gas bomb 1 which becomes raw materials of Si and B2H6 in a gas bomb 2 and O2, N2, etc. in a gas bomb 3 which become doping raw materials are determined on a basis of the quality design, and flow rates are controlled by valves to introduce them into the reaction vessel through a gas mixer. This gas is decomposed by the glow discharge to form a microcrystalline silicon layer 22 on a substrate 21 of the rotating drum base material 11. A protection layer 23 is provided on the layer 22, thus obtaining an electrophotographic photoreceptor.
JP8074381A 1981-05-29 1981-05-29 Electrophotographic photoreceptor Granted JPS57196261A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8074381A JPS57196261A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor
US06/382,285 US4560634A (en) 1981-05-29 1982-05-26 Electrophotographic photosensitive member using microcrystalline silicon
DE8282104724T DE3279006D1 (en) 1981-05-29 1982-05-28 Electrophotographic photosensitive member
EP82104724A EP0066812B1 (en) 1981-05-29 1982-05-28 Electrophotographic photosensitive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8074381A JPS57196261A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor

Publications (2)

Publication Number Publication Date
JPS57196261A true JPS57196261A (en) 1982-12-02
JPH0241743B2 JPH0241743B2 (en) 1990-09-19

Family

ID=13726874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8074381A Granted JPS57196261A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor

Country Status (1)

Country Link
JP (1) JPS57196261A (en)

Also Published As

Publication number Publication date
JPH0241743B2 (en) 1990-09-19

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