DE3310545C2 - - Google Patents

Info

Publication number
DE3310545C2
DE3310545C2 DE3310545A DE3310545A DE3310545C2 DE 3310545 C2 DE3310545 C2 DE 3310545C2 DE 3310545 A DE3310545 A DE 3310545A DE 3310545 A DE3310545 A DE 3310545A DE 3310545 C2 DE3310545 C2 DE 3310545C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3310545A
Other versions
DE3310545A1 (de
Inventor
Haruo Hino Jp Itoh
Katsumi Machida Jp Tokiguchi
Terunori Warabisako
Tadashi Tokio/Tokyo Jp Saitoh
Takashi Higashikurume Jp Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Energy and Industrial Technology Development Organization
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3310545A1 publication Critical patent/DE3310545A1/de
Application granted granted Critical
Publication of DE3310545C2 publication Critical patent/DE3310545C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
DE19833310545 1982-03-24 1983-03-23 Nicht-massenalalysiertes ionenimplantationsverfahren Granted DE3310545A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57045617A JPS58164134A (ja) 1982-03-24 1982-03-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3310545A1 DE3310545A1 (de) 1983-10-06
DE3310545C2 true DE3310545C2 (de) 1987-04-30

Family

ID=12724334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833310545 Granted DE3310545A1 (de) 1982-03-24 1983-03-23 Nicht-massenalalysiertes ionenimplantationsverfahren

Country Status (4)

Country Link
US (1) US4533831A (de)
JP (1) JPS58164134A (de)
DE (1) DE3310545A1 (de)
FR (1) FR2524200A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237421A (ja) * 1985-04-15 1986-10-22 Hitachi Ltd 半導体装置の製造方法
JP2516951B2 (ja) * 1987-02-06 1996-07-24 松下電器産業株式会社 半導体装置の製造方法
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
JP2659000B2 (ja) * 1995-12-18 1997-09-30 松下電器産業株式会社 トランジスタの製造方法
US5808416A (en) * 1996-11-01 1998-09-15 Implant Sciences Corp. Ion source generator auxiliary device
GB9726191D0 (en) * 1997-12-11 1998-02-11 Philips Electronics Nv Ion implantation process
JP2005064033A (ja) * 2003-08-12 2005-03-10 Fujio Masuoka 半導体基板へのイオン注入方法
FR2926301A1 (fr) * 2007-12-21 2009-07-17 Commissariat Energie Atomique Implanteur ionique avec generateur d'hydrogene
WO2009152368A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Application specific implant system and method for use in solar cell fabrications
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US9437392B2 (en) 2011-11-02 2016-09-06 Varian Semiconductor Equipment Associates, Inc. High-throughput ion implanter
TWI506719B (zh) 2011-11-08 2015-11-01 Intevac Inc 基板處理系統及方法
KR101832230B1 (ko) * 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
US9524849B2 (en) 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1280013A (en) * 1969-09-05 1972-07-05 Atomic Energy Authority Uk Improvements in or relating to apparatus bombarding a target with ions
US4013891A (en) * 1975-12-15 1977-03-22 Ibm Corporation Method for varying the diameter of a beam of charged particles
FR2383702A1 (fr) * 1977-03-18 1978-10-13 Anvar Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
DE2835121A1 (de) * 1978-08-10 1980-02-14 Fraunhofer Ges Forschung Verfahren und vorrichtung zum dotieren von halbleitern mittels ionenimplantation
DE2835136A1 (de) * 1978-08-10 1980-02-14 Fraunhofer Ges Forschung Solarelement sowie verfahren und vorrichtung zur herstellung desselben mittels ionenimplantation
JPS5852297B2 (ja) * 1979-06-04 1983-11-21 株式会社日立製作所 マイクロ波イオン源
JPS5669826A (en) 1979-11-09 1981-06-11 Hitachi Ltd Ion injector
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
US6580727B1 (en) * 1999-08-20 2003-06-17 Texas Instruments Incorporated Element management system for a digital subscriber line access multiplexer

Also Published As

Publication number Publication date
FR2524200B1 (de) 1985-05-03
DE3310545A1 (de) 1983-10-06
JPS58164134A (ja) 1983-09-29
US4533831A (en) 1985-08-06
JPH0349176B2 (de) 1991-07-26
FR2524200A1 (fr) 1983-09-30

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE SCHULZ, R., DIPL.-PHYS. DR.RER.NAT., PAT.- U. RECHTSANW. AHLES, H., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. AHLES, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN