DE3213768C2 - - Google Patents
Info
- Publication number
- DE3213768C2 DE3213768C2 DE3213768A DE3213768A DE3213768C2 DE 3213768 C2 DE3213768 C2 DE 3213768C2 DE 3213768 A DE3213768 A DE 3213768A DE 3213768 A DE3213768 A DE 3213768A DE 3213768 C2 DE3213768 C2 DE 3213768C2
- Authority
- DE
- Germany
- Prior art keywords
- film
- magnetic
- ions
- hydrogen ions
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 105
- 230000005291 magnetic effect Effects 0.000 claims description 83
- 239000002223 garnet Substances 0.000 claims description 45
- -1 hydrogen ions Chemical class 0.000 claims description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 28
- 239000013039 cover film Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910002708 Au–Cu Inorganic materials 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 32
- 150000002500 ions Chemical class 0.000 description 32
- 238000005468 ion implantation Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 9
- 238000005496 tempering Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56055551A JPS57170510A (en) | 1981-04-15 | 1981-04-15 | Method of ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3213768A1 DE3213768A1 (de) | 1982-11-25 |
| DE3213768C2 true DE3213768C2 (enExample) | 1988-06-09 |
Family
ID=13001834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823213768 Granted DE3213768A1 (de) | 1981-04-15 | 1982-04-14 | Verfahren zum implantieren eines magnetgranatfilms mit einem ion |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4460412A (enExample) |
| JP (1) | JPS57170510A (enExample) |
| DE (1) | DE3213768A1 (enExample) |
| GB (1) | GB2098818B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59195396A (ja) * | 1983-04-20 | 1984-11-06 | Comput Basic Mach Technol Res Assoc | 磁気バブル転送路形成方法 |
| JPS59227080A (ja) * | 1983-06-06 | 1984-12-20 | Fujitsu Ltd | イオン注入バブルデバイスの作製法 |
| CA1231629A (en) * | 1983-08-30 | 1988-01-19 | Keiichi Betsui | Process for producing ion implanted bubble device |
| US4610731A (en) * | 1985-04-03 | 1986-09-09 | At&T Bell Laboratories | Shallow impurity neutralization |
| US4982248A (en) * | 1989-01-11 | 1991-01-01 | International Business Machines Corporation | Gated structure for controlling fluctuations in mesoscopic structures |
| JP3445925B2 (ja) * | 1997-10-07 | 2003-09-16 | シャープ株式会社 | 半導体記憶素子の製造方法 |
| AU753568B2 (en) | 1998-01-16 | 2002-10-24 | Trudell Medical International | Indicating device for use with a dispensing device |
| US6082358A (en) | 1998-05-05 | 2000-07-04 | 1263152 Ontario Inc. | Indicating device for aerosol container |
| KR100692444B1 (ko) * | 2000-05-11 | 2007-03-09 | 가부시끼가이샤 도꾸야마 | 다결정 실리콘, 그 제조 방법 및 제조 장치 |
| WO2007091702A1 (en) * | 2006-02-10 | 2007-08-16 | Showa Denko K.K. | Magnetic recording medium, method for production thereof and magnetic recording and reproducing device |
| JP4597933B2 (ja) * | 2006-09-21 | 2010-12-15 | 昭和電工株式会社 | 磁気記録媒体の製造方法、並びに磁気記録再生装置 |
| JP4510796B2 (ja) * | 2006-11-22 | 2010-07-28 | 株式会社アルバック | 磁気記憶媒体の製造方法 |
| US12415048B2 (en) | 2019-12-10 | 2025-09-16 | Trudell Medical International Inc. | Integrated dose counter |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3967002A (en) * | 1974-12-31 | 1976-06-29 | International Business Machines Corporation | Method for making high density magnetic bubble domain system |
| GB1527005A (en) * | 1975-12-31 | 1978-10-04 | Ibm | Method and apparatus for magnetic bubble storage |
| JPS5538601A (en) * | 1978-08-30 | 1980-03-18 | Fujitsu Ltd | Magnetic bubble element |
| US4308592A (en) * | 1979-06-29 | 1981-12-29 | International Business Machines Corporation | Patterned kill of magnetoresistive layer in bubble domain chip |
-
1981
- 1981-04-15 JP JP56055551A patent/JPS57170510A/ja active Pending
-
1982
- 1982-04-12 US US06/367,675 patent/US4460412A/en not_active Expired - Fee Related
- 1982-04-14 DE DE19823213768 patent/DE3213768A1/de active Granted
- 1982-04-14 GB GB8210793A patent/GB2098818B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2098818B (en) | 1985-03-20 |
| JPS57170510A (en) | 1982-10-20 |
| DE3213768A1 (de) | 1982-11-25 |
| US4460412A (en) | 1984-07-17 |
| GB2098818A (en) | 1982-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8181 | Inventor (new situation) |
Free format text: IMURA, RYO, SAYAMA, JP IKEDA, TADASHI SUZUKI, RYO, KODAIRA, JP KOISO, NAGATSUGU, TAMA, JP TAKEUCHI,TERUAKI, KOKUBUNJI, JP UMEZAKI, HIROSHI, MITAKA, JP SUGITA, YUTAKA, TOKOROZAWA, JP |
|
| 8125 | Change of the main classification |
Ipc: H01F 10/30 |
|
| 8126 | Change of the secondary classification |
Ipc: H01F 10/24 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |