GB2098818B - Method of ion implantation - Google Patents

Method of ion implantation

Info

Publication number
GB2098818B
GB2098818B GB8210793A GB8210793A GB2098818B GB 2098818 B GB2098818 B GB 2098818B GB 8210793 A GB8210793 A GB 8210793A GB 8210793 A GB8210793 A GB 8210793A GB 2098818 B GB2098818 B GB 2098818B
Authority
GB
United Kingdom
Prior art keywords
ion implantation
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8210793A
Other languages
English (en)
Other versions
GB2098818A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB2098818A publication Critical patent/GB2098818A/en
Application granted granted Critical
Publication of GB2098818B publication Critical patent/GB2098818B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
GB8210793A 1981-04-15 1982-04-14 Method of ion implantation Expired GB2098818B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56055551A JPS57170510A (en) 1981-04-15 1981-04-15 Method of ion implantation

Publications (2)

Publication Number Publication Date
GB2098818A GB2098818A (en) 1982-11-24
GB2098818B true GB2098818B (en) 1985-03-20

Family

ID=13001834

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8210793A Expired GB2098818B (en) 1981-04-15 1982-04-14 Method of ion implantation

Country Status (4)

Country Link
US (1) US4460412A (enExample)
JP (1) JPS57170510A (enExample)
DE (1) DE3213768A1 (enExample)
GB (1) GB2098818B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195396A (ja) * 1983-04-20 1984-11-06 Comput Basic Mach Technol Res Assoc 磁気バブル転送路形成方法
JPS59227080A (ja) * 1983-06-06 1984-12-20 Fujitsu Ltd イオン注入バブルデバイスの作製法
CA1231629A (en) * 1983-08-30 1988-01-19 Keiichi Betsui Process for producing ion implanted bubble device
US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
US4982248A (en) * 1989-01-11 1991-01-01 International Business Machines Corporation Gated structure for controlling fluctuations in mesoscopic structures
JP3445925B2 (ja) * 1997-10-07 2003-09-16 シャープ株式会社 半導体記憶素子の製造方法
AU753568B2 (en) 1998-01-16 2002-10-24 Trudell Medical International Indicating device for use with a dispensing device
US6082358A (en) 1998-05-05 2000-07-04 1263152 Ontario Inc. Indicating device for aerosol container
KR100692444B1 (ko) * 2000-05-11 2007-03-09 가부시끼가이샤 도꾸야마 다결정 실리콘, 그 제조 방법 및 제조 장치
WO2007091702A1 (en) * 2006-02-10 2007-08-16 Showa Denko K.K. Magnetic recording medium, method for production thereof and magnetic recording and reproducing device
JP4597933B2 (ja) * 2006-09-21 2010-12-15 昭和電工株式会社 磁気記録媒体の製造方法、並びに磁気記録再生装置
JP4510796B2 (ja) * 2006-11-22 2010-07-28 株式会社アルバック 磁気記憶媒体の製造方法
US12415048B2 (en) 2019-12-10 2025-09-16 Trudell Medical International Inc. Integrated dose counter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967002A (en) * 1974-12-31 1976-06-29 International Business Machines Corporation Method for making high density magnetic bubble domain system
GB1527005A (en) * 1975-12-31 1978-10-04 Ibm Method and apparatus for magnetic bubble storage
JPS5538601A (en) * 1978-08-30 1980-03-18 Fujitsu Ltd Magnetic bubble element
US4308592A (en) * 1979-06-29 1981-12-29 International Business Machines Corporation Patterned kill of magnetoresistive layer in bubble domain chip

Also Published As

Publication number Publication date
JPS57170510A (en) 1982-10-20
DE3213768A1 (de) 1982-11-25
DE3213768C2 (enExample) 1988-06-09
US4460412A (en) 1984-07-17
GB2098818A (en) 1982-11-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee