DE3117009A1 - "hochfrequenzverstaerker" - Google Patents

"hochfrequenzverstaerker"

Info

Publication number
DE3117009A1
DE3117009A1 DE19813117009 DE3117009A DE3117009A1 DE 3117009 A1 DE3117009 A1 DE 3117009A1 DE 19813117009 DE19813117009 DE 19813117009 DE 3117009 A DE3117009 A DE 3117009A DE 3117009 A1 DE3117009 A1 DE 3117009A1
Authority
DE
Germany
Prior art keywords
electrode
transistor
amplifier according
frequency amplifier
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813117009
Other languages
German (de)
English (en)
Other versions
DE3117009C2 (cg-RX-API-DMAC10.html
Inventor
Paul O. 01720 Acton Mass. Haugsjaa
Robert J. 02192 Needham Mass. Regan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Verizon Laboratories Inc
Original Assignee
GTE Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTE Laboratories Inc filed Critical GTE Laboratories Inc
Publication of DE3117009A1 publication Critical patent/DE3117009A1/de
Application granted granted Critical
Publication of DE3117009C2 publication Critical patent/DE3117009C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE19813117009 1980-05-01 1981-04-29 "hochfrequenzverstaerker" Granted DE3117009A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/145,519 US4342967A (en) 1980-05-01 1980-05-01 High voltage, high frequency amplifier

Publications (2)

Publication Number Publication Date
DE3117009A1 true DE3117009A1 (de) 1982-02-18
DE3117009C2 DE3117009C2 (cg-RX-API-DMAC10.html) 1992-09-10

Family

ID=22513476

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813117009 Granted DE3117009A1 (de) 1980-05-01 1981-04-29 "hochfrequenzverstaerker"

Country Status (6)

Country Link
US (1) US4342967A (cg-RX-API-DMAC10.html)
JP (1) JPS573404A (cg-RX-API-DMAC10.html)
CA (1) CA1161911A (cg-RX-API-DMAC10.html)
DE (1) DE3117009A1 (cg-RX-API-DMAC10.html)
FR (1) FR2481863B1 (cg-RX-API-DMAC10.html)
GB (1) GB2075298B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3839241A1 (de) * 1988-11-21 1990-05-23 Telefunken Electronic Gmbh Verstaerkerschaltung mit einem verstaerkertransistor

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590436A (en) * 1984-04-27 1986-05-20 Gte Laboratories Incorporated High voltage, high frequency amplifier circuit
US4590437A (en) * 1984-04-27 1986-05-20 Gte Laboratories Incorporated High frequency amplifier
US4591803A (en) * 1984-05-29 1986-05-27 At&T Bell Laboratories Linear FET power amplifier
US4602221A (en) * 1984-12-24 1986-07-22 Gte Laboratories Incorporated High frequency energy source
US4591809A (en) * 1984-12-24 1986-05-27 Gte Laboratories Incorporated High frequency power source
US4667144A (en) * 1986-06-03 1987-05-19 The United States Of America As Represented By The Secretary Of The Air Force High frequency, high voltage MOSFET isolation amplifier
US4736117A (en) * 1986-11-14 1988-04-05 National Semiconductor Corporation VDS clamp for limiting impact ionization in high density CMOS devices
US4841253A (en) * 1987-04-15 1989-06-20 Harris Corporation Multiple spiral inductors for DC biasing of an amplifier
JPS63274409A (ja) * 1987-05-06 1988-11-11 Sanyo Chem Ind Ltd 有機性汚泥の脱水法
US4820999A (en) * 1987-09-11 1989-04-11 The Aerospace Corporation Method and apparatus for amplifying signals
US4835485A (en) * 1988-03-25 1989-05-30 General Electric Company Unconditionally-stable ultra low noise R.F. preamplifier
US4965526A (en) * 1989-07-14 1990-10-23 Motorola Inc. Hybrid amplifier
US5038113A (en) * 1989-12-01 1991-08-06 General Electric Company Nonlinearity generator using FET source-to-drain conductive path
US5061903A (en) * 1990-02-27 1991-10-29 Grumman Aerospace Corporation High voltage modified cascode circuit
US5015968A (en) * 1990-07-27 1991-05-14 Pacific Monolithics Feedback cascode amplifier
FR2683686A1 (fr) * 1991-11-07 1993-05-14 Europ Agence Spatiale Amplificateur de puissance micro-ondes.
RU94017633A (ru) * 1994-05-12 1996-04-20 С.Г. Тихомиров Усилитель высокой частоты с каскадным суммированием мощностей
US5483191A (en) * 1994-09-23 1996-01-09 At&T Corp. Apparatus for biasing a FET with a single voltage supply
AT405002B (de) * 1995-08-01 1999-04-26 Werner Dipl Ing Dr Pritzl Vorrichtung zur verstärkung von signalen hoher leistung im hochvrequenz- und mikrowellenbereich
KR0157206B1 (ko) * 1996-03-28 1999-02-18 김광호 저잡음 증폭기
JPH10322141A (ja) * 1997-05-20 1998-12-04 Matsushita Electric Ind Co Ltd 高周波電力増幅器およびそれを用いた無線通信装置
US6121842A (en) * 1997-05-21 2000-09-19 Raytheon Company Cascode amplifier
US6020636A (en) * 1997-10-24 2000-02-01 Eni Technologies, Inc. Kilowatt power transistor
JP3668610B2 (ja) * 1998-04-10 2005-07-06 太陽誘電株式会社 高周波電力増幅回路
DE10036127B4 (de) * 2000-07-25 2007-03-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur Versorgungsspannungsentkopplung für HF-Verstärkerschaltungen
JP2008010667A (ja) * 2006-06-29 2008-01-17 Mitsumi Electric Co Ltd 半導体装置
US20080048785A1 (en) * 2006-08-22 2008-02-28 Mokhtar Fuad Bin Haji Low-noise amplifier
US8466747B1 (en) * 2011-04-08 2013-06-18 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US8963645B1 (en) * 2011-04-08 2015-02-24 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US8854144B2 (en) 2012-09-14 2014-10-07 General Atomics High voltage amplifiers and methods
US9219450B1 (en) * 2014-01-07 2015-12-22 Lockheed Martin Corporation High linearity low noise amplifier
US9520836B1 (en) * 2015-08-13 2016-12-13 Raytheon Company Multi-stage amplifier with cascode stage and DC bias regulator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1107282B (de) * 1957-08-02 1961-05-25 Philips Nv Mehrstufiger galvanisch gekoppelter Transistorverstaerker
DE2219122B2 (de) * 1971-04-19 1975-09-18 Motorola, Inc., Franklin Park, Ill. (V.St.A.) Feldeffekttransistorstufe als Mischer oder Verstärker mit verbesserter Intermodulationsunterdrückung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2943267A (en) * 1955-10-31 1960-06-28 Sperry Rand Corp Series-energized transistor amplifier
US3401349A (en) * 1966-11-02 1968-09-10 Rca Corp Wide band high frequency amplifier
JPS4828366U (cg-RX-API-DMAC10.html) * 1971-08-12 1973-04-06
JPS52143739A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Amplifier circuit
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
JPS6010106Y2 (ja) * 1978-09-27 1985-04-08 八木アンテナ株式会社 カスケ−ド増幅器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1107282B (de) * 1957-08-02 1961-05-25 Philips Nv Mehrstufiger galvanisch gekoppelter Transistorverstaerker
DE2219122B2 (de) * 1971-04-19 1975-09-18 Motorola, Inc., Franklin Park, Ill. (V.St.A.) Feldeffekttransistorstufe als Mischer oder Verstärker mit verbesserter Intermodulationsunterdrückung

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
J.R. JAMES, "Analysis of the transistor cascode configuration", Electronic Engineering, Jan. 1960, S.44-48 *
TIETZE/SCHENK: Halbleiterschaltungstechnik, 3.Aufl., Springer Verl., 1976, S.111-113 *
TIETZE/SCHENK: Halbleiter-Schaltungstechnik, 5.Aufl., Springer Verl., 1980, S.45-48, LB 5737-3 *
US-Z.: D.C. WYLAND, "FET Cascode technique optimizcs differential amplifier performance", Electronics, 18.1.1971, S.81-84 *
US-Z.: Jun-Ichi NISHIZAWA, Takeshi TERASAKI, Jiro SHIBATA, "Field-effect versus analog transistor static Induction transistor", IEEE Transactions on electron devices, Vol. ED-22, No.4, April 1975, S.185-197 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3839241A1 (de) * 1988-11-21 1990-05-23 Telefunken Electronic Gmbh Verstaerkerschaltung mit einem verstaerkertransistor

Also Published As

Publication number Publication date
JPH0548005B2 (cg-RX-API-DMAC10.html) 1993-07-20
GB2075298B (en) 1984-03-07
DE3117009C2 (cg-RX-API-DMAC10.html) 1992-09-10
GB2075298A (en) 1981-11-11
FR2481863A1 (fr) 1981-11-06
CA1161911A (en) 1984-02-07
FR2481863B1 (fr) 1988-05-27
US4342967A (en) 1982-08-03
JPS573404A (en) 1982-01-08

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: GRUENECKER, A., DIPL.-ING. KINKELDEY, H., DIPL.-IN

8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee