DE3030270C2 - - Google Patents
Info
- Publication number
- DE3030270C2 DE3030270C2 DE19803030270 DE3030270A DE3030270C2 DE 3030270 C2 DE3030270 C2 DE 3030270C2 DE 19803030270 DE19803030270 DE 19803030270 DE 3030270 A DE3030270 A DE 3030270A DE 3030270 C2 DE3030270 C2 DE 3030270C2
- Authority
- DE
- Germany
- Prior art keywords
- deposition
- acid
- nickel
- complexing agent
- cobalt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 19
- 239000008139 complexing agent Substances 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- IGOJDKCIHXGPTI-UHFFFAOYSA-N [P].[Co].[Ni] Chemical compound [P].[Co].[Ni] IGOJDKCIHXGPTI-UHFFFAOYSA-N 0.000 claims description 5
- 239000004471 Glycine Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- 235000004279 alanine Nutrition 0.000 claims description 2
- 235000013922 glutamic acid Nutrition 0.000 claims description 2
- 239000004220 glutamic acid Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910001429 cobalt ion Inorganic materials 0.000 claims 2
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims 2
- -1 hypophosphite ions Chemical class 0.000 claims 2
- 229910001453 nickel ion Inorganic materials 0.000 claims 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims 1
- 239000011975 tartaric acid Substances 0.000 claims 1
- 235000002906 tartaric acid Nutrition 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 150000002739 metals Chemical class 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 235000001014 amino acid Nutrition 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000009918 complex formation Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000530268 Lycaena heteronea Species 0.000 description 1
- JUWOETZNAMLKMG-UHFFFAOYSA-N [P].[Ni].[Cu] Chemical compound [P].[Ni].[Cu] JUWOETZNAMLKMG-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 244000052616 bacterial pathogen Species 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000035784 germination Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- FEWJPZIEWOKRBE-LWMBPPNESA-N levotartaric acid Chemical compound OC(=O)[C@@H](O)[C@H](O)C(O)=O FEWJPZIEWOKRBE-LWMBPPNESA-N 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803030270 DE3030270A1 (de) | 1980-08-09 | 1980-08-09 | Verfahren zur chemisch-stromlosen abscheidung ternaerer nickel-kobalt-phosphor-schichten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803030270 DE3030270A1 (de) | 1980-08-09 | 1980-08-09 | Verfahren zur chemisch-stromlosen abscheidung ternaerer nickel-kobalt-phosphor-schichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3030270A1 DE3030270A1 (de) | 1982-04-01 |
| DE3030270C2 true DE3030270C2 (enrdf_load_stackoverflow) | 1988-04-07 |
Family
ID=6109324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803030270 Granted DE3030270A1 (de) | 1980-08-09 | 1980-08-09 | Verfahren zur chemisch-stromlosen abscheidung ternaerer nickel-kobalt-phosphor-schichten |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3030270A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102023101628B4 (de) | 2023-01-24 | 2024-08-08 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlmikroskop |
| DE102023103317A1 (de) * | 2023-02-10 | 2024-08-14 | Plasma Innovations GmbH | Verfahren zur Herstellung einer lötfähigen Leiterplatte mit Anschlussflächen aus Aluminium |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1280622B (de) * | 1962-05-25 | 1968-10-17 | Ibm | Verfahren zur Herstellung einer Magnetschicht aus einer Kobalt-Nickel-Legierung auf einem Traeger durch stromlose Abscheidung |
| JPS5428831B2 (enrdf_load_stackoverflow) * | 1973-05-18 | 1979-09-19 | ||
| US3932694A (en) * | 1974-04-04 | 1976-01-13 | Tatsuta Densen Kabushiki Kaisha | Pre-treatment method for electroless plating for producing a metal film as resistor |
| DE2634232C2 (de) * | 1976-07-30 | 1984-10-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur stromlosen reduktiven Abscheidung von Nickel-Phosphor-Schichten, insbesondere für elektrische Widerstände |
-
1980
- 1980-08-09 DE DE19803030270 patent/DE3030270A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3030270A1 (de) | 1982-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0003977B1 (de) | Verfahren zum stromlosen Abscheiden von Kupfer | |
| DE69509116T2 (de) | Beschichtung mit silber | |
| DE69025500T2 (de) | Verfahren zur Herstellung eines kupferkaschierten Laminats | |
| DE2920766C2 (enrdf_load_stackoverflow) | ||
| DE69224914T2 (de) | Stromloses goldbeschichtungsbad | |
| DE2522939C2 (de) | Wäßriges Abscheidungsbad für die stromlose Abscheidung einer polymetallischen Nickellegierung | |
| DE3787312T2 (de) | Metallisierte Polymere. | |
| DE2159612A1 (de) | Verfahren zum stromlosen Metall plattieren nichtleitender Korper | |
| DE10054544A1 (de) | Verfahren zum chemischen Metallisieren von Oberflächen | |
| DE3787937T2 (de) | Verfahren zur Herstellung von metallisierten Bildern. | |
| DE69807658T2 (de) | Mikroporöser kupferfilm und lösung für stromlose kupferplattierung zur herstellung derselben | |
| DE3012999A1 (de) | Galvanisches bad zur abscheidung von gold- und goldlegierungsueberzuegen | |
| DE3030270C2 (enrdf_load_stackoverflow) | ||
| DE10006128B4 (de) | Plattierungsbad zum Abscheiden einer Sn-Bi-Legierung und dessen Verwendung | |
| EP1330558B1 (de) | Bleifreie chemisch-nickel-legierung | |
| DE3343052A1 (de) | Waessriges bad zur unmittelbaren stromlosen abscheidung von gold auf metallisierter keramik sowie ein verfahren zum stromlosen vergolden von metallisierter keramik | |
| EP0281804A2 (de) | Stabilisiertes alkalisches Goldbad zur stromlosen Abscheidung von Gold | |
| JP3227505B2 (ja) | 置換型無電解金めっき液 | |
| DE2634232C2 (de) | Verfahren zur stromlosen reduktiven Abscheidung von Nickel-Phosphor-Schichten, insbesondere für elektrische Widerstände | |
| DE2148744A1 (de) | Verfahren zum stromlosen Abscheiden einer Nickel-Zinn- oder Nickel-Molybdaen-Legierung | |
| DE3034877C2 (enrdf_load_stackoverflow) | ||
| DE3043462C2 (enrdf_load_stackoverflow) | ||
| DE3486228T2 (de) | Nickelplattierung von aluminium ohne elektrizität. | |
| DE69113389T2 (de) | Bad zum stromlosen Abscheiden einer Blei-Zinn Legierung. | |
| EP1763594B1 (de) | Verfahren zur verbesserung der lötbarkeit von nickelüberzügen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8101 | Request for examination as to novelty | ||
| 8105 | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |