DE3012168C2 - - Google Patents
Info
- Publication number
- DE3012168C2 DE3012168C2 DE3012168A DE3012168A DE3012168C2 DE 3012168 C2 DE3012168 C2 DE 3012168C2 DE 3012168 A DE3012168 A DE 3012168A DE 3012168 A DE3012168 A DE 3012168A DE 3012168 C2 DE3012168 C2 DE 3012168C2
- Authority
- DE
- Germany
- Prior art keywords
- inert
- copper
- anodes
- anode
- soluble
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000002378 acidificating effect Effects 0.000 claims description 8
- 125000000446 sulfanediyl group Chemical group *S* 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910000923 precious metal alloy Inorganic materials 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims 1
- 239000003792 electrolyte Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- -1 ester Sodium salt Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical compound OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 description 1
- VOKFESKJFXDLAS-UHFFFAOYSA-N C(CC)S(=O)(=O)O.C(C)(=S)N.[Na] Chemical compound C(CC)S(=O)(=O)O.C(C)(=S)N.[Na] VOKFESKJFXDLAS-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RYYWUUFWQRZTIU-UHFFFAOYSA-N Thiophosphoric acid Chemical compound OP(O)(S)=O RYYWUUFWQRZTIU-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- 229950004394 ditiocarb Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- FTCLAXOKVVLHEG-UHFFFAOYSA-N sodium;3-sulfanylpropane-1-sulfonic acid Chemical compound [Na].OS(=O)(=O)CCCS FTCLAXOKVVLHEG-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrolytic Production Of Metals (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803012168 DE3012168A1 (de) | 1980-03-27 | 1980-03-27 | Verfahren zur galvanischen abscheidung von kupferniederschlaegen |
| US06/244,727 US4419192A (en) | 1980-03-27 | 1981-03-17 | Method for galvanic deposition of copper |
| GB8108990A GB2076855B (en) | 1980-03-27 | 1981-03-23 | Process for the electrodeposition of copper coatings |
| IT20676/81A IT1135708B (it) | 1980-03-27 | 1981-03-24 | Procedimento per la deposizione galvanica di precipitati di rame |
| JP4258581A JPS56150197A (en) | 1980-03-27 | 1981-03-25 | Electrodeposition of lustrous ductile copper deposit |
| FR8105967A FR2479275A1 (fr) | 1980-03-27 | 1981-03-25 | Procede pour l'electrodeposition de cuivre |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803012168 DE3012168A1 (de) | 1980-03-27 | 1980-03-27 | Verfahren zur galvanischen abscheidung von kupferniederschlaegen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3012168A1 DE3012168A1 (de) | 1981-10-01 |
| DE3012168C2 true DE3012168C2 (en, 2012) | 1988-12-01 |
Family
ID=6098700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803012168 Granted DE3012168A1 (de) | 1980-03-27 | 1980-03-27 | Verfahren zur galvanischen abscheidung von kupferniederschlaegen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4419192A (en, 2012) |
| JP (1) | JPS56150197A (en, 2012) |
| DE (1) | DE3012168A1 (en, 2012) |
| FR (1) | FR2479275A1 (en, 2012) |
| GB (1) | GB2076855B (en, 2012) |
| IT (1) | IT1135708B (en, 2012) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3240643A1 (de) * | 1982-11-04 | 1984-05-30 | LPW-Chemie GmbH, 4040 Neuss | Erzeugung von leiterbahnbeschichtungen und leitenden lochwandbeschichtungen auf bzw. in leiterplatten |
| AU575037B2 (en) * | 1983-01-03 | 1988-07-21 | Omi International Corp. | Cyanide-free copper plating electrolyte and process |
| US4462874A (en) * | 1983-11-16 | 1984-07-31 | Omi International Corporation | Cyanide-free copper plating process |
| US4469569A (en) * | 1983-01-03 | 1984-09-04 | Omi International Corporation | Cyanide-free copper plating process |
| US4652345A (en) * | 1983-12-19 | 1987-03-24 | International Business Machines Corporation | Method of depositing a metal from an electroless plating solution |
| JPS63270490A (ja) * | 1987-04-27 | 1988-11-08 | Permelec Electrode Ltd | クロムメツキ法 |
| US5051154A (en) * | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| US4933051A (en) * | 1989-07-24 | 1990-06-12 | Omi International Corporation | Cyanide-free copper plating process |
| US5344538A (en) * | 1993-01-11 | 1994-09-06 | Gould Inc. | Thin plate anode |
| US6736954B2 (en) | 2001-10-02 | 2004-05-18 | Shipley Company, L.L.C. | Plating bath and method for depositing a metal layer on a substrate |
| ITTO20070704A1 (it) * | 2007-10-05 | 2009-04-06 | Create New Technology S R L | Sistema e metodo di placcatura di leghe metalliche mediante tecnologia galvanica |
| CN102605401B (zh) * | 2012-03-23 | 2015-11-18 | 如皋市易达电子有限责任公司 | 一种表面处理槽在线锡回收结构 |
| EP2735627A1 (en) * | 2012-11-26 | 2014-05-28 | ATOTECH Deutschland GmbH | Copper plating bath composition |
| DE102012024758B4 (de) * | 2012-12-18 | 2024-02-01 | Maschinenfabrik Niehoff Gmbh & Co Kg | Vorrichtung und Verfahren zum elektrolytischen Beschichten eines Gegenstandes und deren Verwendung |
| JP5692268B2 (ja) * | 2013-03-25 | 2015-04-01 | トヨタ自動車株式会社 | 金属被膜の成膜装置および成膜方法 |
| CN105018977B (zh) * | 2015-07-17 | 2017-09-12 | 深圳市板明科技有限公司 | 一种填孔电镀整平剂、制备方法及应用该整平剂的电镀液 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE473919A (en, 2012) * | ||||
| US1465034A (en) * | 1921-11-03 | 1923-08-14 | Frank L Antisell | Process for the electrolytic deposition of copper |
| US2133255A (en) * | 1937-05-19 | 1938-10-11 | Percy A E Armstrong | Process of electroplating copper |
| US4052271A (en) * | 1965-05-12 | 1977-10-04 | Diamond Shamrock Technologies, S.A. | Method of making an electrode having a coating containing a platinum metal oxide thereon |
| DE2165823A1 (de) * | 1971-12-31 | 1973-07-05 | Esser Kg Galvano Titanbau M | Vorrichtung zur elektrolytischen abscheidung von metallen |
| US3947344A (en) * | 1973-04-27 | 1976-03-30 | Nikolai Sergeevich Golikov | Inert anode |
| DD112145B1 (de) * | 1974-03-22 | 1986-10-29 | Cordt Schmidt | Verfahren und vorrichtung zur erzeugung von wischfesten haftbelaegen auf metallfolien, insbesondere auf kupferfolien |
| CH602946A5 (en, 2012) * | 1974-07-31 | 1978-08-15 | Bbc Brown Boveri & Cie | |
| DE2746938C2 (de) * | 1977-10-17 | 1987-04-09 | Schering AG, 1000 Berlin und 4709 Bergkamen | Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und rißfreien Kupferüberzügen und Verwendung dieses Bades |
-
1980
- 1980-03-27 DE DE19803012168 patent/DE3012168A1/de active Granted
-
1981
- 1981-03-17 US US06/244,727 patent/US4419192A/en not_active Expired - Lifetime
- 1981-03-23 GB GB8108990A patent/GB2076855B/en not_active Expired
- 1981-03-24 IT IT20676/81A patent/IT1135708B/it active
- 1981-03-25 FR FR8105967A patent/FR2479275A1/fr active Granted
- 1981-03-25 JP JP4258581A patent/JPS56150197A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4419192A (en) | 1983-12-06 |
| FR2479275A1 (fr) | 1981-10-02 |
| IT8120676A0 (it) | 1981-03-24 |
| JPS6411719B2 (en, 2012) | 1989-02-27 |
| IT1135708B (it) | 1986-08-27 |
| JPS56150197A (en) | 1981-11-20 |
| GB2076855B (en) | 1983-09-21 |
| DE3012168A1 (de) | 1981-10-01 |
| GB2076855A (en) | 1981-12-09 |
| FR2479275B1 (en, 2012) | 1983-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: ATOTECH DEUTSCHLAND GMBH, 10553 BERLIN, DE |