DE2937952C2 - Nichtflüchtige Speicheranordnung - Google Patents
Nichtflüchtige SpeicheranordnungInfo
- Publication number
- DE2937952C2 DE2937952C2 DE2937952A DE2937952A DE2937952C2 DE 2937952 C2 DE2937952 C2 DE 2937952C2 DE 2937952 A DE2937952 A DE 2937952A DE 2937952 A DE2937952 A DE 2937952A DE 2937952 C2 DE2937952 C2 DE 2937952C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- drain
- floating gate
- source
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US94672278A | 1978-09-28 | 1978-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2937952A1 DE2937952A1 (de) | 1980-04-03 |
| DE2937952C2 true DE2937952C2 (de) | 1983-04-14 |
Family
ID=25484885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2937952A Expired DE2937952C2 (de) | 1978-09-28 | 1979-09-20 | Nichtflüchtige Speicheranordnung |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5546598A (enExample) |
| DE (1) | DE2937952C2 (enExample) |
| FR (1) | FR2437676A1 (enExample) |
| GB (1) | GB2032687B (enExample) |
| IT (1) | IT1122538B (enExample) |
| SE (1) | SE7907193L (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328565A (en) | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
| US4409723A (en) * | 1980-04-07 | 1983-10-18 | Eliyahou Harari | Method of forming non-volatile EPROM and EEPROM with increased efficiency |
| DE3141390A1 (de) * | 1981-10-19 | 1983-04-28 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt |
| FR2524714B1 (fr) * | 1982-04-01 | 1986-05-02 | Suwa Seikosha Kk | Transistor a couche mince |
| US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
| US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
| US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
| US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
| FR2621737B1 (fr) * | 1987-10-09 | 1991-04-05 | Thomson Semiconducteurs | Memoire en circuit integre |
| US5087584A (en) * | 1990-04-30 | 1992-02-11 | Intel Corporation | Process for fabricating a contactless floating gate memory array utilizing wordline trench vias |
| KR100241524B1 (ko) * | 1996-12-28 | 2000-02-01 | 김영환 | 플래쉬 메모리 셀 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
| DE2525097C3 (de) * | 1975-06-05 | 1982-08-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Betrieb eines n-Kanal-Speicher-FET |
| AT365000B (de) * | 1974-09-20 | 1981-11-25 | Siemens Ag | N-kanal-speicher-fet |
| DE2643948C2 (de) * | 1976-09-29 | 1981-10-15 | Siemens AG, 1000 Berlin und 8000 München | In einer Matrix angeordnete Speicher-FETs und Verfahren zu ihrer Herstellung |
| JPS53108247A (en) * | 1976-12-27 | 1978-09-20 | Texas Instruments Inc | Electrically programmable floating gate semiconductor memory |
-
1979
- 1979-08-29 SE SE7907193A patent/SE7907193L/ not_active Application Discontinuation
- 1979-09-07 IT IT25552/79A patent/IT1122538B/it active
- 1979-09-20 GB GB7932557A patent/GB2032687B/en not_active Expired
- 1979-09-20 DE DE2937952A patent/DE2937952C2/de not_active Expired
- 1979-09-27 FR FR7924057A patent/FR2437676A1/fr active Granted
- 1979-09-27 JP JP12524779A patent/JPS5546598A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT7925552A0 (it) | 1979-09-07 |
| SE7907193L (sv) | 1980-03-29 |
| GB2032687B (en) | 1983-03-23 |
| JPS5732514B2 (enExample) | 1982-07-12 |
| FR2437676A1 (fr) | 1980-04-25 |
| IT1122538B (it) | 1986-04-23 |
| FR2437676B1 (enExample) | 1982-12-17 |
| DE2937952A1 (de) | 1980-04-03 |
| GB2032687A (en) | 1980-05-08 |
| JPS5546598A (en) | 1980-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |