JPS5732514B2 - - Google Patents
Info
- Publication number
- JPS5732514B2 JPS5732514B2 JP12524779A JP12524779A JPS5732514B2 JP S5732514 B2 JPS5732514 B2 JP S5732514B2 JP 12524779 A JP12524779 A JP 12524779A JP 12524779 A JP12524779 A JP 12524779A JP S5732514 B2 JPS5732514 B2 JP S5732514B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US94672278A | 1978-09-28 | 1978-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5546598A JPS5546598A (en) | 1980-04-01 |
| JPS5732514B2 true JPS5732514B2 (enExample) | 1982-07-12 |
Family
ID=25484885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12524779A Granted JPS5546598A (en) | 1978-09-28 | 1979-09-27 | Durable memory array |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5546598A (enExample) |
| DE (1) | DE2937952C2 (enExample) |
| FR (1) | FR2437676A1 (enExample) |
| GB (1) | GB2032687B (enExample) |
| IT (1) | IT1122538B (enExample) |
| SE (1) | SE7907193L (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328565A (en) | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
| US4409723A (en) * | 1980-04-07 | 1983-10-18 | Eliyahou Harari | Method of forming non-volatile EPROM and EEPROM with increased efficiency |
| DE3141390A1 (de) * | 1981-10-19 | 1983-04-28 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt |
| FR2524714B1 (fr) * | 1982-04-01 | 1986-05-02 | Suwa Seikosha Kk | Transistor a couche mince |
| US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
| US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
| US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
| US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
| FR2621737B1 (fr) * | 1987-10-09 | 1991-04-05 | Thomson Semiconducteurs | Memoire en circuit integre |
| US5087584A (en) * | 1990-04-30 | 1992-02-11 | Intel Corporation | Process for fabricating a contactless floating gate memory array utilizing wordline trench vias |
| KR100241524B1 (ko) * | 1996-12-28 | 2000-02-01 | 김영환 | 플래쉬 메모리 셀 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
| DE2525097C3 (de) * | 1975-06-05 | 1982-08-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Betrieb eines n-Kanal-Speicher-FET |
| AT365000B (de) * | 1974-09-20 | 1981-11-25 | Siemens Ag | N-kanal-speicher-fet |
| DE2643948C2 (de) * | 1976-09-29 | 1981-10-15 | Siemens AG, 1000 Berlin und 8000 München | In einer Matrix angeordnete Speicher-FETs und Verfahren zu ihrer Herstellung |
| JPS53108247A (en) * | 1976-12-27 | 1978-09-20 | Texas Instruments Inc | Electrically programmable floating gate semiconductor memory |
-
1979
- 1979-08-29 SE SE7907193A patent/SE7907193L/ not_active Application Discontinuation
- 1979-09-07 IT IT25552/79A patent/IT1122538B/it active
- 1979-09-20 GB GB7932557A patent/GB2032687B/en not_active Expired
- 1979-09-20 DE DE2937952A patent/DE2937952C2/de not_active Expired
- 1979-09-27 FR FR7924057A patent/FR2437676A1/fr active Granted
- 1979-09-27 JP JP12524779A patent/JPS5546598A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT7925552A0 (it) | 1979-09-07 |
| SE7907193L (sv) | 1980-03-29 |
| GB2032687B (en) | 1983-03-23 |
| FR2437676A1 (fr) | 1980-04-25 |
| IT1122538B (it) | 1986-04-23 |
| FR2437676B1 (enExample) | 1982-12-17 |
| DE2937952C2 (de) | 1983-04-14 |
| DE2937952A1 (de) | 1980-04-03 |
| GB2032687A (en) | 1980-05-08 |
| JPS5546598A (en) | 1980-04-01 |