DE2929296A1 - Verfahren zur ausbildung von pn-sperrschichten - Google Patents

Verfahren zur ausbildung von pn-sperrschichten

Info

Publication number
DE2929296A1
DE2929296A1 DE19792929296 DE2929296A DE2929296A1 DE 2929296 A1 DE2929296 A1 DE 2929296A1 DE 19792929296 DE19792929296 DE 19792929296 DE 2929296 A DE2929296 A DE 2929296A DE 2929296 A1 DE2929296 A1 DE 2929296A1
Authority
DE
Germany
Prior art keywords
range
layer
laser
silicon
impurity material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19792929296
Other languages
German (de)
English (en)
Inventor
Jagdish Narayan
Rosa Ting Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Original Assignee
US Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy filed Critical US Department of Energy
Publication of DE2929296A1 publication Critical patent/DE2929296A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/092—Laser beam processing-diodes or transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam

Landscapes

  • Photovoltaic Devices (AREA)
DE19792929296 1978-08-09 1979-07-19 Verfahren zur ausbildung von pn-sperrschichten Withdrawn DE2929296A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/932,154 US4147563A (en) 1978-08-09 1978-08-09 Method for forming p-n junctions and solar-cells by laser-beam processing

Publications (1)

Publication Number Publication Date
DE2929296A1 true DE2929296A1 (de) 1980-02-28

Family

ID=25461865

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792929296 Withdrawn DE2929296A1 (de) 1978-08-09 1979-07-19 Verfahren zur ausbildung von pn-sperrschichten

Country Status (6)

Country Link
US (1) US4147563A (https=)
JP (1) JPS5524500A (https=)
CA (1) CA1080835A (https=)
DE (1) DE2929296A1 (https=)
FR (1) FR2433238A1 (https=)
GB (1) GB2027989B (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55500964A (https=) * 1978-11-28 1980-11-13
GB2044804A (en) * 1979-03-16 1980-10-22 Boc Ltd Heat treatment method
US4234358A (en) * 1979-04-05 1980-11-18 Western Electric Company, Inc. Patterned epitaxial regrowth using overlapping pulsed irradiation
US4273950A (en) * 1979-05-29 1981-06-16 Photowatt International, Inc. Solar cell and fabrication thereof using microwaves
FR2460544A1 (fr) * 1979-06-29 1981-01-23 Labo Electronique Physique Procede d'amelioration des performances des photopiles solaires, par irradiation laser et photopiles ainsi obtenues
US4257824A (en) * 1979-07-31 1981-03-24 Bell Telephone Laboratories, Incorporated Photo-induced temperature gradient zone melting
US4242149A (en) * 1979-07-31 1980-12-30 The United States Of America As Represented By The Secretary Of The Army Method of making photodetectors using ion implantation and laser annealing
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4261764A (en) * 1979-10-01 1981-04-14 The United States Of America As Represented By The United States Department Of Energy Laser method for forming low-resistance ohmic contacts on semiconducting oxides
US4257827A (en) * 1979-11-13 1981-03-24 International Business Machines Corporation High efficiency gettering in silicon through localized superheated melt formation
US4370175A (en) * 1979-12-03 1983-01-25 Bernard B. Katz Method of annealing implanted semiconductors by lasers
JPS56135969A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Manufacture of semiconductor device
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
US4364778A (en) * 1980-05-30 1982-12-21 Bell Telephone Laboratories, Incorporated Formation of multilayer dopant distributions in a semiconductor
US4311870A (en) * 1980-09-11 1982-01-19 Nasa Efficiency of silicon solar cells containing chromium
US4465529A (en) * 1981-06-05 1984-08-14 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
JPS6059060A (ja) * 1983-09-09 1985-04-05 Fujitsu Ltd 浸炭窒化の炉気制御方法
US4608452A (en) * 1984-11-07 1986-08-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Lithium counterdoped silicon solar cell
US5918140A (en) * 1997-06-16 1999-06-29 The Regents Of The University Of California Deposition of dopant impurities and pulsed energy drive-in
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
AU749022B2 (en) * 1998-06-29 2002-06-13 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
DE102004036220B4 (de) * 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
US8853527B2 (en) * 2007-02-16 2014-10-07 Nanogram Corporation Solar cell structures, photovoltaic panels and corresponding processes
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
CN102439735B (zh) * 2009-04-22 2015-04-08 泰特拉桑有限公司 通过局部激光辅助转变太阳能电池中的功能膜得到的局部金属接触
US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
US20100294352A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Metal patterning for electrically conductive structures based on alloy formation
US7799666B1 (en) 2009-07-27 2010-09-21 Potomac Photonics, Inc. Method of spatially selective laser-assisted doping of a semiconductor
DE102010061296A1 (de) 2010-12-16 2012-06-21 Schott Solar Ag Verfahren zum Herstellen von elektrisch leitenden Kontakten auf Solarzellen sowie Solarzelle
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
CN102191563B (zh) * 2011-04-22 2012-09-19 中国科学院半导体研究所 共掺杂的硅基杂质中间带材料的制备方法
CN102368510A (zh) * 2011-11-11 2012-03-07 中山大学 基于激光掺杂制备发射极的n型晶体硅太阳电池的制备方法
CN103219421B (zh) * 2013-03-27 2015-05-13 中国科学院上海光学精密机械研究所 利用激光制作垂直多结太阳能电池片的方法
EP2838120B1 (en) * 2013-08-12 2016-03-23 Rigas Tehniska Universitate Graded band gap pn homojunction formation method in silicon
WO2016084299A1 (ja) * 2014-11-28 2016-06-02 パナソニックＩｐマネジメント株式会社 太陽電池セル及び太陽電池モジュール
US9659775B2 (en) * 2015-02-25 2017-05-23 Fuji Electric Co., Ltd. Method for doping impurities, method for manufacturing semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3420719A (en) * 1965-05-27 1969-01-07 Ibm Method of making semiconductors by laser induced diffusion
US3458368A (en) * 1966-05-23 1969-07-29 Texas Instruments Inc Integrated circuits and fabrication thereof
US3420119A (en) * 1967-06-19 1969-01-07 Milton Morse Nonexpandable boot
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
FR2188310A2 (en) * 1970-08-03 1974-01-18 Anvar Microcircuit prodn using laser beam - in which the beam promotes diffusion doping
US3940289A (en) * 1975-02-03 1976-02-24 The United States Of America As Represented By The Secretary Of The Navy Flash melting method for producing new impurity distributions in solids
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Appl. Phys. Lett.", Bd. 33, Nr. 4, 15. August 1978, S. 338-340 *
"J. Appl. Phys.", Bd. 49, Nr. 7, Juli 1978, S. 3912-3917 *
"Solid-State Electronics", Bd. 11(1968), S. 1175-1176 *

Also Published As

Publication number Publication date
FR2433238A1 (fr) 1980-03-07
GB2027989B (en) 1983-01-19
JPS5524500A (en) 1980-02-21
GB2027989A (en) 1980-02-27
US4147563A (en) 1979-04-03
CA1080835A (en) 1980-07-01
FR2433238B1 (https=) 1984-11-09

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Legal Events

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8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee