FR2188310A2 - Microcircuit prodn using laser beam - in which the beam promotes diffusion doping - Google Patents

Microcircuit prodn using laser beam - in which the beam promotes diffusion doping

Info

Publication number
FR2188310A2
FR2188310A2 FR7220695A FR7220695A FR2188310A2 FR 2188310 A2 FR2188310 A2 FR 2188310A2 FR 7220695 A FR7220695 A FR 7220695A FR 7220695 A FR7220695 A FR 7220695A FR 2188310 A2 FR2188310 A2 FR 2188310A2
Authority
FR
France
Prior art keywords
prodn
microcircuit
diffusion doping
laser beam
promotes diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7220695A
Other languages
French (fr)
Other versions
FR2188310B2 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7028660A external-priority patent/FR2104699B1/fr
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7220695A priority Critical patent/FR2188310A2/en
Publication of FR2188310A2 publication Critical patent/FR2188310A2/en
Application granted granted Critical
Publication of FR2188310B2 publication Critical patent/FR2188310B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A ruby or neodymium glass laser operating in the relaxation anode, and transmitting for 0.5-3.0 ns is used to illuminate via an anastigmatic diaphragm of the desired contour a glass film approx. 3000A thick doped with 1020 atoms per cm3 of B or P on a Si substrate. The energy applied is 30-150 J/cm2 dependent on diffusion depth required. A similar method to the above, which is esp. for microdiode junctions, can be used for resistors; in this case a ruby laser in the switched anode is used with a transmission time of around 100 ns.
FR7220695A 1970-08-03 1972-06-08 Microcircuit prodn using laser beam - in which the beam promotes diffusion doping Granted FR2188310A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7220695A FR2188310A2 (en) 1970-08-03 1972-06-08 Microcircuit prodn using laser beam - in which the beam promotes diffusion doping

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7028660A FR2104699B1 (en) 1970-08-03 1970-08-03
FR7220695A FR2188310A2 (en) 1970-08-03 1972-06-08 Microcircuit prodn using laser beam - in which the beam promotes diffusion doping

Publications (2)

Publication Number Publication Date
FR2188310A2 true FR2188310A2 (en) 1974-01-18
FR2188310B2 FR2188310B2 (en) 1974-12-27

Family

ID=33161166

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7220695A Granted FR2188310A2 (en) 1970-08-03 1972-06-08 Microcircuit prodn using laser beam - in which the beam promotes diffusion doping

Country Status (1)

Country Link
FR (1) FR2188310A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2433238A1 (en) * 1978-08-09 1980-03-07 Us Energy PROCESS FOR MANUFACTURING A P-N JUNCTION

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1550390A (en) * 1967-11-08 1968-12-20
US3486221A (en) * 1967-06-14 1969-12-30 Sprague Electric Co High energy beam trimming of electrical components

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486221A (en) * 1967-06-14 1969-12-30 Sprague Electric Co High energy beam trimming of electrical components
FR1550390A (en) * 1967-11-08 1968-12-20

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE: "IBM TECHNICAL DISCLOSURE BULLETIN" VOLUME 11, NO. 2, JUILLET 1968: "INDUCING IMPURITY MIGRATION IN SEMICONDUCTORS BY LASERS"M.L.JOSHI ET AL, PAGES 104-105 *
REVUE AMERICAINE: "THE BELL SYSTEM TECHNICAL JOURNAL" VOLUME 47, MARS 1968 "LASER MACHINING OF THIN FILMS AND INTEGRATED CIRCUITS" M.I.COHEN ET AL, PAGES 385-405 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2433238A1 (en) * 1978-08-09 1980-03-07 Us Energy PROCESS FOR MANUFACTURING A P-N JUNCTION

Also Published As

Publication number Publication date
FR2188310B2 (en) 1974-12-27

Similar Documents

Publication Publication Date Title
GB1028782A (en) Semiconductor light-producing device
JPS52101967A (en) Semiconductor device
GB1062202A (en) Improvements in or relating to light emitting transistor systems
FR2188310A2 (en) Microcircuit prodn using laser beam - in which the beam promotes diffusion doping
GB1433017A (en) Electroluminescent semiconductor arrangement for generating ultra violet radiation
KR860007722A (en) Improved insulating film processing method and wafer and integrated circuit manufactured according to the processing method
JPS57208124A (en) Manufacture of semiconductor device
JPS5245888A (en) Semiconductor laser device
JPS54109765A (en) Manufacture of semiconductor device
GB1246386A (en) Improvements relating to diffusion of material into a substrate
JPS51139283A (en) Semi-conductor device
FR2177554A1 (en) Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer
JPS5290281A (en) Semiconductor laser device
JPS5243376A (en) Semiconductor device
JPS5355142A (en) Electrode forming method in full surface mirror typeliquid crystaldisplay device
GB1086567A (en) Improvements relating to electroluminescent diodes and a method of manufacturing such diodes
JPS57202738A (en) Manufacture of semiconductor device
GB1244867A (en) Semiconductor device
JPS52146566A (en) Testing of semiconductor devices
JPS5676538A (en) Formation of insulating film on semiconductor substrate
DM The use of arough stack'mirror in a mode-locked ruby laser
JPS5261971A (en) Control of turn-off time of silicon controlled rectifying element
JPS56111186A (en) Information write-in/readout system in semiconductor optical memory device
JPS5368180A (en) Semiconductor device
KURBATOV et al. Some characteristics of a miniature pulsed laser with electron excitation