FR2177554A1 - Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer - Google Patents

Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer

Info

Publication number
FR2177554A1
FR2177554A1 FR7211038A FR7211038A FR2177554A1 FR 2177554 A1 FR2177554 A1 FR 2177554A1 FR 7211038 A FR7211038 A FR 7211038A FR 7211038 A FR7211038 A FR 7211038A FR 2177554 A1 FR2177554 A1 FR 2177554A1
Authority
FR
France
Prior art keywords
lacquer
h3po4
esp
photopolymerisable
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7211038A
Other languages
French (fr)
Other versions
FR2177554B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7211038A priority Critical patent/FR2177554A1/en
Publication of FR2177554A1 publication Critical patent/FR2177554A1/en
Application granted granted Critical
Publication of FR2177554B1 publication Critical patent/FR2177554B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

The bath is composed of a soln. of Hf in pure water satd. with NH4F. The soln. opt. contains H3PO4 and pref. compsn. is 6-14 esp. 10 vol. 50% diluted commercial HF, 24-36 esp. 30 vol distilled water, >60 esp. 70 g HF4F per 100 cm3 of Hf water-H3PO4 (if any) and if present 1-10 (4-8) esp. 3 vol. conc. H3PO4. The Si nitride to be etched layer may be on III-V type semiconductor, e.g. (GA+Al) arsenide. Method avoids supplementary treatments between deposit of Si nitride and deposit of lacquer or between the lacquer etching and the nitride etching and avoids use of hot conc. H3PO4 which also attacks the substrate.
FR7211038A 1972-03-29 1972-03-29 Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer Granted FR2177554A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7211038A FR2177554A1 (en) 1972-03-29 1972-03-29 Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7211038A FR2177554A1 (en) 1972-03-29 1972-03-29 Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer

Publications (2)

Publication Number Publication Date
FR2177554A1 true FR2177554A1 (en) 1973-11-09
FR2177554B1 FR2177554B1 (en) 1975-03-21

Family

ID=9096007

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7211038A Granted FR2177554A1 (en) 1972-03-29 1972-03-29 Etching bath - for thin silicon nitride film masked with photopolymerisable lacquer

Country Status (1)

Country Link
FR (1) FR2177554A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037269A (en) * 1997-03-31 2000-03-14 Samsung Electronics Co., Ltd. Etching methods of silicon nitride films employed in microelectronic devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037269A (en) * 1997-03-31 2000-03-14 Samsung Electronics Co., Ltd. Etching methods of silicon nitride films employed in microelectronic devices

Also Published As

Publication number Publication date
FR2177554B1 (en) 1975-03-21

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Legal Events

Date Code Title Description
ST Notification of lapse